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    DD11D01

    Abstract: GN6010A
    Text: HITACHI / OPTOELECTRONICS SIE D Wt 44Tb2D5 DOllGD'ì 37T « H I T 4 T -3 9 -// GN6010A Silicon N Channel IGBT HITACHI Application Mar. 1992 TO -220A B High speed power switching Features • High speed switching tf = 150 ns typ, 350 ns max • Low on saturation voltage


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    PDF DD11D01 GN6010A O-220AB HITMT-31-ll O-22QAB

    2SK384

    Abstract: 2SK384L 2SK384S Hitachi Scans-001 2SK38
    Text: 44Tb2D5 0013DM3 311 B H i m blE D 2SK384L,2SK384S HITACHI/ OPTOELECTRONICS SILICON N -C H A N N E L M O S FET r n 11 Type <D Type H IG H SPEED POW ER S W IT C H IN G . H IG H FR E Q U E N C Y POWER A M PLIFIER Q • FEATURES • S m a ll Package. • High Sp ee d S w itch in g .


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    PDF 44Tb2D5 0013DM3 2SK384L 2SK384S 2SK384 2SK384S Hitachi Scans-001 2SK38

    DIODE T25 4 Jo

    Abstract: DIODE T25 4 do 2SK384L-2SK384S 2SK384 DIODE T25 4
    Text: blE D 44Tb2D5 0013DM3 311 IHim 2SK384L,2SK384S HITACHI/ OPTOELECTRONICS S ILIC O N N -C H A N N E L M O S FET r n 11 ÏM H IG H S P E E D P O W E R S W IT C H IN G . H IG H F R E Q U E N C Y P O W E R A M P L IF IE R H Type <DType • FEATUR ES • Sm all Package.


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    PDF 44TbED5 0013DM3 2SK384L-2SK384S DIODE T25 4 Jo DIODE T25 4 do 2SK384 DIODE T25 4

    2SK1665

    Abstract: RD20A VM-50V diode sr45 Silicon N Channel MOS FET High Speed Power Switching 2sk16
    Text: 44Tb2D5 0D134ÛE 7^5 « H i m 2SK1665- tlE T> HITACHI/ O P T O E L E C T R O N I C S SILICON N -CHANNEL MOS FET 5 .0 m u . T ii HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device


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    PDF 44Tb2D5 0D134Ã 44clbS0S 2SK1665 2SK1665 RD20A VM-50V diode sr45 Silicon N Channel MOS FET High Speed Power Switching 2sk16

    LM060L

    Abstract: LM060 hitachi 16 X 2 lcd
    Text: HITACHI / OPTOELECTRONICS HITACHI LIE D • ■ MM'ibSOS DD1244b flt.7 ■ HITM . . LM060L ■ 24 character x 2 lines ■ Controller LSI HD44780 is built-in (See page 115). ■ +5V single power supply INTERNAL PIN CONNECTION MECHANICAL DATA (Nominal dimensions)


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    PDF DD1244b LM060L HD44780 Rf-200kQ 44Tb2D5 LM060L LM060 hitachi 16 X 2 lcd

    2SJ110

    Abstract: 2sj118 t1511
    Text: bl E D • MMTbSGS 0D1ST17 570 ■ H I T M 2 S J118 , 2 S J110 H I T A C H I / OPTOELECTRONICS *3.!±02 SILICON P-CHANNEL MOS FET - HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK413, 2SK414 ■ FEATURES • Low On-Resistance.


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    PDF 0D1ST17 2SK413, 2SK414 44Tb5DS 2SJ118 2SJ119 2SJ110 t1511

    HE8815VG

    Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
    Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.


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    PDF HL8311E/G HL8311E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HE7601SG HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M

    TRM5467

    Abstract: No abstract text available
    Text: TRM5467 Preliminary OC-3 Transmitter Description The TRM5467 is a lightwave transmitter for OC-3. Features • Fabry-Perot laser diode • High optical output power: +ldB m min. • Operation at 155.52 Mb/s (Scrambled NRZ) at 1.3 (im wavelength • Uncooled laser with automatic optical power con­


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    PDF TRM5467 TRM5467 10/125pm QQ1447b

    2SK399

    Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
    Text: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.


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    PDF 2SJ113 2SK399 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001

    11w cfl circuit

    Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
    Text: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm


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    PDF 0G12135 HL1521A/AC/FG HL1521A/AC/FG HL1521FG) HL1521FG HL1521FG HL1521 HE8815VG HE8813VG 11w cfl circuit HE8807SG HL1521A HL1521AC HL8312E LTH 1550 01 Hitachi Scans-001 44BA

    hitachi he1301

    Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser


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    PDF HL7838G D0120L42 HL7838G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, hitachi he1301 HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HL7838 Hitachi Scans-001 HE8403

    Thermistor bth 471

    Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
    Text: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier


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    PDF D01S14S HL1541A/AC/FG/BF/DL/DM D012140 HL1541 HL1541A/AC HL1541FG HL1541BF HL1541DL HE8815VG HE8813VG Thermistor bth 471 d 1548 10G 1550 optical laser in butterfly HL1541A HL1541DM 10 gb laser diode AP-93

    hitachi sr 302

    Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
    Text: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)


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    PDF HL1561A/AC/BF DD121S3 HL1561A/AC/BF HL1561BF HL1561 HL1561BF) 561A/AC/BF) HE8815VG HE8813VG HE8815VG hitachi sr 302 te 1819 HL1561A HL1561AC 10 gb laser diode Hitachi Scans-001

    T9040

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are


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    PDF HL8318E/G 441bEG5 HL8318E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, T9040 HE8807SG HE8813VG HL8312E HL8318E HL8318G Hitachi Scans-001