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    44SOP FLASH Search Results

    44SOP FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MR28F010-90 Rochester Electronics LLC 28F010 - 128K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    MD28F010-90 Rochester Electronics LLC 28F010 - 128K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    MD28F010-20/B Rochester Electronics LLC 28F010 - 128K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    AM188EM-25KC\\W Rochester Electronics LLC AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics LLC Buy
    AM188EM-40KC\\W Rochester Electronics LLC AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics LLC Buy

    44SOP FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    lh28f320bjd

    Abstract: AF-9706 SDP-UNIV-48TS 1E07AA LH28F320BJD-TTL 1E08AB AF-9708 AF9708 AF-9845 ALL-11
    Text: June/18/2002 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.


    Original     		June/18/2002 LH28F640BFHE-PBTLZF LRS1393 LRS1395 LRS1827 LRS1B09 LRS1B11 LRS1B121 AF9834 Y-1000 lh28f320bjd AF-9706 SDP-UNIV-48TS 1E07AA LH28F320BJD-TTL 1E08AB AF-9708 AF9708 AF-9845 ALL-11 PDF

    MX29LV160D

    Abstract: S29AL Spansion s29al016d 032D BOTTON 500MIL MX29LV320 MX29LV800C Spansion Flash S29AL004D
    Text: APPLICATION NOTE Migrating to the Macronix MX29LV400C/800C/160D/320D Flash Families from Spansion S29AL004D/008D/016D/032D Devices. Contents Introduction. 2


    Original     		MX29LV400C/800C/160D/320D S29AL004D/008D/016D/032D MX29LV160D S29AL Spansion s29al016d 032D BOTTON 500MIL MX29LV320 MX29LV800C Spansion Flash S29AL004D PDF

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY 8M AND 16M DENSITIES • 8M AND 16M FLASH MEMORY WITH 120ns AND 150ns ACCESS TIMES • PLEASE CONTACT FLINT FOR DETAILS OF THE 16M PARTS 8M AND 16M FLASH MEMORY • • • • • New Product Access Voltage Icc Part Number Size Format ns V mA max


    Original     		120ns 150ns PD29F008L PD29F800L 44SOP 512Kx16 40TSOP PDF

    MSP55lv512

    Abstract: MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A
    Text: ＡＦ９８４５／４５Ｂ／４５Ｃ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９８４５ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｂ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｃ ＧＡＮＧ ＵＮＩＴ Ｆｌａｓｈ Ｓｕｐｐｏｒｔ Ｇｒｏｕｐ，Ｉｎｃ．


    Original     		AF9723/23B TEF808-50CF-01 FF804 50CARD AF9845/45B/45C FAT12FAT16 1GBit128MByte Am27C400 Am29DL16xCB TE003-48BG-07D MSP55lv512 MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A PDF

    lh28f800bvhe-tv85

    Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
    Text: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V


    Original     		LH28F008SCT-L12 40TSOP LH28F008SAT-85 LH28F008SAHT-85 LH28F008SAN-85 LH28F008SAN-12 44SOP LH28F008SCHT-L85 LH28F008SCT-L85 lh28f800bvhe-tv85 LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide PDF

    lh28f320bjd

    Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
    Text: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.


    Original     		November/1/2003 LH28F008BJ LH28F008BJT-TTLxx LH28F008BJT-BTLxx 40TSOP LHF00L02 LHF00L03 lh28f320bjd HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723 PDF

    HD637B01VOP

    Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
    Text: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ


    Original     		AF-9700 24DIP 28DIP HD637B01VOP HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257 PDF

    MSP14LV160

    Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
    Text: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ


    Original     		AF9708/09/09B/10/23 nearest09 AF9709B/09C AF9723 AF9708 TE004-44PL-04 AF9709 MSP14LV160 MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512 PDF

    msm5232

    Abstract: d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit
    Text: Semiconductor Shortform Catalogue June 1999 Taupo Bay, New Zealand Foreword Strong Partnerships http://www.arm.com/ http://www.rambus.com/ http://www.elan.fr/ http://www.dialogic.com/ http://www.symbionics.co.uk/ http://www.vividsemi.com/ Oki Semiconductor Websites


    Original     		99J595RB msm5232 d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM MSM66P589 MSM6411 18QFJ 3ch-10bit PDF

    Untitled

    Abstract: No abstract text available
    Text: preliminary HY23V64200 4MX16/8MX8 BIT CMOS MASK ROM Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external


    Original     		HY23V64200 4MX16/8MX8 HY23V64200 100/120ns. 44SOP, 44TSOP-II 48TSOP-I PDF

    HY23C32200F

    Abstract: HY23C32200M HY23C32200S HY23C32200T
    Text: 2MX16/4MX8 BIT CMOS MASK ROM HY23C32200 Description The HY23C32200 high per form ance r ead only mem or y i s or gani z ed ei th er a s 4,19 4,304 x 8bi t byte mode or as 2,097,152 x16 bit(word mode) and has an access time of 70/100/120ns. It needs no external


    Original     		2MX16/4MX8 HY23C32200 HY23C32200 70/100/120ns. 44SOP, 44TSOP-II 48TSOP-I 44TSOP-II HY23C32200F HY23C32200M HY23C32200S HY23C32200T PDF

    HY23V32200

    Abstract: 44SOP
    Text: 2MX16/4MX8 BIT CMOS MASK ROM HY23V32200 Description The HY23V32200 high per formance read onl y m em or y i s or gani z ed ei th er a s 4,19 4,304 x 8bi t byte mode or as 2,097,152 x16 bit(word mode) and has an access time of 70/100/120ns. It needs no external


    Original     		2MX16/4MX8 HY23V32200 HY23V32200 70/100/120ns. 44SOP, 44TSOP-II 48TSOP-I 44TSOP-II 44SOP PDF

    44SOP flash memory

    Abstract: No abstract text available
    Text: 4MX16/8MX8 BIT CMOS MASK ROM HY23V64200 Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external


    Original     		4MX16/8MX8 HY23V64200 HY23V64200 100/120ns. 44SOP, 44TSOP-II 48TSOP-I 44TSOP-II 44SOP flash memory PDF

    HY23C64200

    Abstract: 4MX16 4Mx16 flash 48-TSOPI
    Text: 4MX16/8MX8 BIT CMOS MASK ROM HY23C64200 Description The HY23C64200 high per form ance r ead only mem or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external


    Original     		4MX16/8MX8 HY23C64200 HY23C64200 100/120ns. 44SOP, 44TSOP-II 48TSOP-I 44TSOP-II 4MX16 4Mx16 flash 48-TSOPI PDF

    48fbga

    Abstract: BV12 48-FBGA 44SOP flash
    Text: MEMORIES • Symmetrical Block Sm artVoltage Flash Memories Supply V o lta g e S m a rt V o lta g e Capacity Bit configuration S upply v o lta g e can be s e le cte d a u to m a tic a lly fro m fo llo w in g co m b in a tio n s ; Vcc = 3.0 to 3.6 V, Vpp = 3.0 to 3.6 V DVcc = 3.0 to 3.6 V, Vpp = 4.5 to 5.5 V @Vcc = 3.0 to 3.6 V, Vpp =


    OCR Scan     		t75lD Vte475to525V) LH28F008SCT/R/N/B-V85 64k-byte LH28F008SCT/R/N/B-V12 LH28F008SCHT/R/N/B-V85 LH28F008SCHT/R/N/B-V12 40TSOP 44SOP/48FBGA 48fbga BV12 48-FBGA 44SOP flash PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Under developm ent • Second-generation Boot Block Sm artVoltage Flash Memories Supply Voltage Sm art Voltage Capacity Bit ;onf!guratior Supply voltage can be selected autom atically from following combinations ; Vcc = 2.7 to 3.6 V, Vpp = 2.7 to 3.6 V Vcc = 2.7 to 3.6 V, Vpp = 4.5 to 5.5 V ®Vcc = 2.7 to 3.6 V, Vpp = 11.4 to 12.6V


    OCR Scan     		/B-TTL12 LH28F160BVHE/B-TTL90 LH28F160BVHE/B-TTL12 LH28F160BVE/B-BTL90 LH28F160B VE/B-BTL12 LH28F160BVHE/B-BTL90 LH28F160BVHE/B-BTL12 48TSOP 44SOP/48FBGA PDF

    48FBGA

    Abstract: No abstract text available
    Text: MEMORIES ★ U n d e r d e v e lo p m e n t Pege Mode Flash Memories Supply Voltage Smart 3 Capacity Bit amfiguratior 16 M X Supply voltage can be selected automatically from following combinations ; DVcc = 3.0 to 3.6 V, Vpp = 3.0 to 3.6 V Vcc = 3.0 to 3.6 V. Vpp = 4.5 to 5.5 V


    OCR Scan     		30to3 32k-w LH28F160SPE/N-50 LH28F160SPHE-55 12x18 48TSOP0) GE/R/B-BTL10 48TSOP 48TSO 48FBGA PDF

    lh5s4

    Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
    Text: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T


    OCR Scan     		LH53V4T00E LH53V4ROOAN/AT LH53V4R00N/T LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T LH534A00T LH534BOOT lh5s4 LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85 PDF

    lh537

    Abstract: 42DIP lh533200 LH535g
    Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H


    OCR Scan     		LH-538VXX LH-5387XX LH-538NXX 32DIP/32SOP/32TSOP 32DIP/32SOP/ 32TSOP 42DIP/44SOP 48TSOP0) lh537 42DIP lh533200 LH535g PDF

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600 PDF

    56TSOP

    Abstract: LH28F020SUT LH28F032SUTD-10 LH28F016SAT
    Text: MEMORIES • Flash Memories Capacity Configuration Erasable block size bytes (words x bits) Model No. Accees time (ns) MAX. Supply voltage (V) ★LH28F020SUT/N-N60 60 Vcc=5 ★LH28F020SUT/N-N80 80 Vpp=5 Read current (mA)MAX. Operating temperature (1C) Package


    OCR Scan     		40TSOP /44SOP 56TSOP 64k/32k/16k LH28F020SUT/N-L12 LH28F020SUT/N-L15 LH28F004SUT-N60 LH28F004SUT-N80 LH28F004SUT-L12 LH28F004SUT-L15 LH28F020SUT LH28F032SUTD-10 LH28F016SAT PDF

    60-FBGA

    Abstract: No abstract text available
    Text: MEMORIES ★ U n d e r d e v e lo p m e n t • Second-generation Boot Block Sm art 5 Flash Memories Supply V o lta g e S m a rt 5 Capacity Bit Mfifiguration S upply v o lta g e ca n be s e le c te d a u to m a tic a lly from follow ing co m b ination ; V c c = 4 .5 to 5 .5 V, V p p = 4 .5 to 5 .5 V © V c c = 4 .5 to 5 .5 V. V p p = 1 1 .4 to 1 2 .6 V


    OCR Scan     		32k-word 64k-byte) LH28F160BVE/B-TTLL12 LH28F160BVE/B-TTLL15 LH28F160ByHE/B-TTLL12 LH28F16 BVHE/B-TTLL15 LH28F160BVE/B-BTLL12 LH28F160BVE/B-BTLL15 LH28F160BVHE/B-BTLL12 60-FBGA PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Under developm ent lal-Power-Supply Flash Mem ories Capacity 8M 16M Configuration Erase Mock size wordsxbits (bytes) 1M 2M 1M X 8 16 X Access time (ns) MAX. Supply voltage LH28F008SAT/R/N-85 85 Vcc = 5 V LH28F008SAT/R/N-12 120 Vpp = 12 V ★LH28F008SAT/R/B-KF85


    OCR Scan     		LH28F008SAT/R/N-85 LH28F008SAT/R/N-12 LH28F008SAT/R/B-KF85 LH28F008SAT/R/B-KF12 40TSOP /44SO 40TSO /42FB PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF