4490 Faulhaber
Abstract: minimotor SA minimotor SA 22 54 DC servo motor brown orange red three terminals faulhaber series 15/5 manual hallsensor proportionality potentiometers faulhaber pwm speedcontrol motor circuit diagram of encoder
Text: Servo Amplifier 4-Quadrant PWM for Brushless DC-Servomotors Series BLD 7010 Operating Instructions Index Chapter page 1. Description 2 2. Illustration 2 3. Specification 3 4. Dimensions 3 5. 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Safety notes Skilled personnel
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MA15002,
4490 Faulhaber
minimotor SA
minimotor SA 22 54
DC servo motor brown orange red three terminals
faulhaber series 15/5 manual
hallsensor
proportionality potentiometers
faulhaber pwm
speedcontrol motor
circuit diagram of encoder
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4490 Faulhaber
Abstract: hallsensor minimotor SA 22 54 minimotor dc motor drehzahlsensors servomotor minimotor SA 22 72 watt dc motors 4490 faulhaber bld
Text: Servoverstärker 4-Quadranten PWM für Bürstenlose DC-Servomotoren Serie BLD 7010 Bedienungsanleitung Inhaltsübersicht Inhaltsverzeichnis 1. Beschreibung Seite 2 2. Abbildung 2 3. Technische Daten 3 4. Abmessungen 3 5. 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9
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MA10002,
4490 Faulhaber
hallsensor
minimotor SA 22 54
minimotor dc motor
drehzahlsensors
servomotor
minimotor SA 22
72 watt dc motors
4490
faulhaber bld
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PDF
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IXAN0022
Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS
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IXAN0022
ISOPLUS220TM,
ISOPLUS247TM,
ISOPLUS264
ISOPLUS220,
ISOLPUS247
advantKU4-498/X
ISOPLUS220
KU4-498/X
O-247
IXAN0022
KU4-499
KU4-495
KU4-498
isoplus
ixys cross
KU4499
isoplus ixys mounting
KU3-381
4490 mosfet
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Untitled
Abstract: No abstract text available
Text: PD - 93911 IRFPS3815 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.015Ω G ID = 105A S Description The HEXFET® Power MOSFETs from International
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IRFPS3815
Super-247â
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irf 450a
Abstract: IRFPS37N50A j 6810 50s MARKING CODE 247t J 6810 D MJ 6810
Text: PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.015Ω G ID = 105A S
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IRFPS3815PbF
Super-247TM
IRFPS37N50A
IRFPS37N50A
irf 450a
j 6810
50s MARKING CODE
247t
J 6810 D
MJ 6810
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PDF
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irf 450a
Abstract: IRFPS3815 4490 mosfet
Text: PD - 93911 IRFPS3815 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.015Ω G ID = 105A S Description The HEXFET® Power MOSFETs from International
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IRFPS3815
Super-247TM
Super-247TM
irf 450a
IRFPS3815
4490 mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.015Ω G ID = 105A S
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IRFPS3815PbF
Super-247â
IRFPS37N50A
IRFPS37N50A
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IRFH5004TR2PBF
Abstract: AN-1154 IRFH5004TRPBF
Text: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5004PbF
IRFH5004TR2PBF
AN-1154
IRFH5004TRPBF
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Untitled
Abstract: No abstract text available
Text: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5004PbF
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Untitled
Abstract: No abstract text available
Text: PD -97450A IRFH5004PbF HEXFET Power MOSFET V DS 40 V R DS on max 2.6 m Qg (typical) 73 nC R G (typical) 1.2 (@VGS = 10V) ID 100 (@Tmb = 25°C) h A PQFN 5X6 mm Applications •Secondary Side Synchronous Rectification Inverters for DC Motors
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-97450A
IRFH5004PbF
IRFH5004PBF
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFH5004PbF HEXFET Power MOSFET V DS 40 V R DS on max 2.6 mΩ Qg (typical) 73 nC R G (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tmb = 25°C) h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
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IRFH5004PbF
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IRF1324
Abstract: No abstract text available
Text: PD - 96199 IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRF1324PbF
O-220AB
IRF1324
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CI 4490
Abstract: AN-1005 irf1324pbf
Text: PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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6199A
IRF1324PbF
O-220AB
O-220AB
CI 4490
AN-1005
irf1324pbf
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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6199A
IRF1324PbF
O-220AB
O-220AB
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irf 450a
Abstract: IRF1324SPBF 97353A AN-994
Text: PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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7353A
IRF1324SPbF
IRF1324LPbF
O-262
EIA-418.
irf 450a
IRF1324SPBF
97353A
AN-994
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IRF132
Abstract: IRF1324SPBF
Text: PD - 97353 IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRF1324SPbF
IRF1324LPbF
340Ac
O-262
IRF1324SPbF
Para90
EIA-418.
IRF132
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04NG
Abstract: 48 04NG 4804NG 369D
Text: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices
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NTD4804NA
NTD4804NA/D
04NG
48 04NG
4804NG
369D
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04NG
Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTD4804N
NTD4804N/D
04NG
48 04NG
369D
NTD4804N
NTD4804NT4G
4804NG
WA117
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48 04NG
Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G
Text: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com
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NTD4804N
NTD4804N/D
48 04NG
04NG
4804NG
4804N
NTD4804NT4G
DASF0034379
369D
NTD4804N
NTD4804N-1G
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48 04NG
Abstract: 4804NG 04NG NTD4804NT4G 4804N
Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTD4804N
NTD4804N/D
48 04NG
4804NG
04NG
NTD4804NT4G
4804N
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48 04NG
Abstract: 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117
Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTD4804N
NTD4804N/D
48 04NG
4804ng
04NG
4804N
NTD4804NT4G
369D
NTD4804N
WA117
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04NG
Abstract: 4804N 48 04NG 4804NG NTD4804NT4G
Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTD4804N
NTD4804N/D
04NG
4804N
48 04NG
4804NG
NTD4804NT4G
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Untitled
Abstract: No abstract text available
Text: • 4302271 0054115 132 ■ g H a r r is HAS IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Features Package T O -2 4 7 TOP VIEW • 18A and 20A, 200V - 150V • rDS on) - 0.1 80 and 0.220 DRAIN (TAB) • Single Pulse Avalanche Energy Rated
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OCR Scan
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IRFP240R,
IRFP241R
IRFP242R,
IRFP243R
IRFP241R,
IRFP243R
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IRFP240R
Abstract: 4490 mosfet mosfet irfp 250 N 3fv 60
Text: m H a r r is IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 F e a tu re s Package T O -2 4 7 • 18A and 20A , 2 0 0 V - 150V TOP VIEW • ro s o n = 0 .1 8 0 and 0 .2 2 0 DRAIN (TAB) • Single Pulse A valanche Energy Rated
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OCR Scan
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IRFP240R,
IRFP241R
IRFP242R,
IRFP243R
IRFP241R,
IRFP243R
IRFP240R
4490 mosfet
mosfet irfp 250 N
3fv 60
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PDF
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