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    4490 MOSFET Search Results

    4490 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4490 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4490 Faulhaber

    Abstract: minimotor SA minimotor SA 22 54 DC servo motor brown orange red three terminals faulhaber series 15/5 manual hallsensor proportionality potentiometers faulhaber pwm speedcontrol motor circuit diagram of encoder
    Text: Servo Amplifier 4-Quadrant PWM for Brushless DC-Servomotors Series BLD 7010 Operating Instructions Index Chapter page 1. Description 2 2. Illustration 2 3. Specification 3 4. Dimensions 3 5. 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Safety notes Skilled personnel


    Original     		PDF MA15002, 4490 Faulhaber minimotor SA minimotor SA 22 54 DC servo motor brown orange red three terminals faulhaber series 15/5 manual hallsensor proportionality potentiometers faulhaber pwm speedcontrol motor circuit diagram of encoder

    4490 Faulhaber

    Abstract: hallsensor minimotor SA 22 54 minimotor dc motor drehzahlsensors servomotor minimotor SA 22 72 watt dc motors 4490 faulhaber bld
    Text: Servoverstärker 4-Quadranten PWM für Bürstenlose DC-Servomotoren Serie BLD 7010 Bedienungsanleitung Inhaltsübersicht Inhaltsverzeichnis 1. Beschreibung Seite 2 2. Abbildung 2 3. Technische Daten 3 4. Abmessungen 3 5. 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9


    Original     		PDF MA10002, 4490 Faulhaber hallsensor minimotor SA 22 54 minimotor dc motor drehzahlsensors servomotor minimotor SA 22 72 watt dc motors 4490 faulhaber bld

    IXAN0022

    Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
    Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS


    Original     		PDF IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD - 93911 IRFPS3815 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.015Ω G ID = 105A S Description The HEXFET® Power MOSFETs from International


    Original     		PDF IRFPS3815 Super-247â

    irf 450a

    Abstract: IRFPS37N50A j 6810 50s MARKING CODE 247t J 6810 D MJ 6810
    Text: PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.015Ω G ID = 105A S


    Original     		PDF IRFPS3815PbF Super-247TM IRFPS37N50A IRFPS37N50A irf 450a j 6810 50s MARKING CODE 247t J 6810 D MJ 6810

    irf 450a

    Abstract: IRFPS3815 4490 mosfet
    Text: PD - 93911 IRFPS3815 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.015Ω G ID = 105A S Description The HEXFET® Power MOSFETs from International


    Original     		PDF IRFPS3815 Super-247TM Super-247TM irf 450a IRFPS3815 4490 mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD - 95896 IRFPS3815PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.015Ω G ID = 105A S


    Original     		PDF IRFPS3815PbF Super-247â IRFPS37N50A IRFPS37N50A

    IRFH5004TR2PBF

    Abstract: AN-1154 IRFH5004TRPBF
    Text: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original     		PDF IRFH5004PbF IRFH5004TR2PBF AN-1154 IRFH5004TRPBF

    Untitled

    Abstract: No abstract text available
    Text: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors


    Original     		PDF IRFH5004PbF

    Untitled

    Abstract: No abstract text available
    Text: PD -97450A IRFH5004PbF HEXFET Power MOSFET V DS 40 V R DS on max 2.6 m Qg (typical) 73 nC R G (typical) 1.2  (@VGS = 10V) ID 100 (@Tmb = 25°C) h A PQFN 5X6 mm Applications •Secondary Side Synchronous Rectification Inverters for DC Motors


    Original     		PDF -97450A IRFH5004PbF IRFH5004PBF

    Untitled

    Abstract: No abstract text available
    Text: IRFH5004PbF HEXFET Power MOSFET V DS 40 V R DS on max 2.6 mΩ Qg (typical) 73 nC R G (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tmb = 25°C) h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications


    Original     		PDF IRFH5004PbF

    IRF1324

    Abstract: No abstract text available
    Text: PD - 96199 IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF1324PbF O-220AB IRF1324

    CI 4490

    Abstract: AN-1005 irf1324pbf
    Text: PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 6199A IRF1324PbF O-220AB O-220AB CI 4490 AN-1005 irf1324pbf

    Untitled

    Abstract: No abstract text available
    Text: PD - 96199A IRF1324PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 6199A IRF1324PbF O-220AB O-220AB

    irf 450a

    Abstract: IRF1324SPBF 97353A AN-994
    Text: PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 7353A IRF1324SPbF IRF1324LPbF O-262 EIA-418. irf 450a IRF1324SPBF 97353A AN-994

    IRF132

    Abstract: IRF1324SPBF
    Text: PD - 97353 IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF1324SPbF IRF1324LPbF 340Ac O-262 IRF1324SPbF Para90 EIA-418. IRF132

    04NG

    Abstract: 48 04NG 4804NG 369D
    Text: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4804NA NTD4804NA/D 04NG 48 04NG 4804NG 369D

    04NG

    Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 04NG 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117

    48 04NG

    Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G

    48 04NG

    Abstract: 4804NG 04NG NTD4804NT4G 4804N
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 4804NG 04NG NTD4804NT4G 4804N

    48 04NG

    Abstract: 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117

    04NG

    Abstract: 4804N 48 04NG 4804NG NTD4804NT4G
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 04NG 4804N 48 04NG 4804NG NTD4804NT4G

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0054115 132 ■ g H a r r is HAS IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Features Package T O -2 4 7 TOP VIEW • 18A and 20A, 200V - 150V • rDS on) - 0.1 80 and 0.220 DRAIN (TAB) • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRFP240R, IRFP241R IRFP242R, IRFP243R IRFP241R, IRFP243R

    IRFP240R

    Abstract: 4490 mosfet mosfet irfp 250 N 3fv 60
    Text: m H a r r is IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 F e a tu re s Package T O -2 4 7 • 18A and 20A , 2 0 0 V - 150V TOP VIEW • ro s o n = 0 .1 8 0 and 0 .2 2 0 DRAIN (TAB) • Single Pulse A valanche Energy Rated


    OCR Scan     		PDF IRFP240R, IRFP241R IRFP242R, IRFP243R IRFP241R, IRFP243R IRFP240R 4490 mosfet mosfet irfp 250 N 3fv 60