96-417-C323T
Abstract: IMD14 FMG12
Text: Transistors FMG12 IMD14 96-417-C323T (96-470-IMD14) 576
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FMG12
IMD14
96-417-C323T)
96-470-IMD14)
96-417-C323T
IMD14
FMG12
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Untitled
Abstract: No abstract text available
Text: INNOVATIVE DISPLAY TECHNOLOGIES 17171 MURPHY AVENUE IRVINE, CALIFORNIA 92614-5915 P: 949-417-8070/F: 949-417-8075 E-mail: info@shellyinc.com Website: www.shellyinc.com Specification Part Number : Customer : SCA07010-BFN-LRA APPROVED BY: FOR CUSTOMER USE ONLY
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949-417-8070/F:
SCA07010-BFN-LRA
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Shelly Associates
Abstract: No abstract text available
Text: 17171 Murphy Avenue Irvine, CA 92614 Tel: 949 417 8070 Fax: (949) 417 8075 www.shellyinc.com info@shellyinc.com PART NO. : SCA05711-BFN-LRA Version . : A301 Shelly Associates Inc. www.shellyinc.com SCA05711-BFN-LRA VER:A PAGE: 1/17 CONTENTS NO. 1. 2. 3.
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SCA05711-BFN-LRA
Shelly Associates
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C144* transistor
Abstract: C144E transistor a144* transistor C114y c102 TRANSISTOR 96-415-C114E a114* transistor UMW10 c114e FMW1
Text: Transistors FMG12 IMD14 96-417-C323T (96-470-IMD14) 576 Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 (94S-389-A41) (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors UMA10N / FMA10A / IMB17A UMG10N
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FMG12
IMD14
96-417-C323T)
96-470-IMD14)
94S-389-A41)
94S-398-C41)
FMG13
94S-849-A143T)
94S-877-C143T)
UMA10N
C144* transistor
C144E transistor
a144* transistor
C114y
c102 TRANSISTOR
96-415-C114E
a114* transistor
UMW10
c114e
FMW1
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Untitled
Abstract: No abstract text available
Text: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417
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BF416
BF418
-25mA)
-250V
-300V
70MHz
O-126-
CB-16
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound
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FMMT415
FMMT417
AEC-Q101
J-STD-020
FMMT415-FMMT417
DS33084
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SD25-2R2
Abstract: BAT54S application note DFLS220L DN417 BAT54S LT1946 LT3489
Text: Drive Large TFT-LCD Displays with a Space-Saving Triple-Output Regulator – Design Note 417 Jesus Rosales Introduction The power appetite of large TFT-LCDs appears to be insatiable. Power supplies must feed increasing numbers of transistors and improved display resolutions, and do
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LT3489,
600mA
DFLS220L
LT3489
100nF
400mA
CDRH4D28-2R0
DN417
400mA
900mA
SD25-2R2
BAT54S application note
DFLS220L
BAT54S
LT1946
LT3489
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Untitled
Abstract: No abstract text available
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551
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MMBT5550
MMBT5551
OT-23
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MMBT5551
Abstract: MMBT5551 G1 1N914 MMBT5550
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551
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MMBT5550
MMBT5551
OT-23
MMBT5551
MMBT5551 G1
1N914
MMBT5550
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MMBT5550
Abstract: MMBT5551 1N914
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO MMBT5550 140 160 6.0 600 MMBT5551 160 180 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100
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MMBT5550
MMBT5551
OT-23
MMBT5550
MMBT5551
1N914
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Untitled
Abstract: No abstract text available
Text: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R -0.1 -20 -40 -100 -5.0 -100 -35 -4.0 WEITRON http://www.weitron.com.tw S9012SLT1=12S 1/2 -0.15 u -0.15
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S9012LT1
OT-23
S9012PLT1
S9012QLT1
S9012RLT1
S9012SLT1
28-Apr-2011
-50mAdc)
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Untitled
Abstract: No abstract text available
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) 1.0 , MMBT5550 MMBT5551 140 160
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MMBT5550
MMBT5551
OT-23
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sot-23 Marking 1HD
Abstract: TOP marking 1HD SOT-23 1HD 1hb marking SS8550LT1
Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 O E=-20Vdc, I E= 0) -40 -5.0 WEITRON http://www.weitron.com.tw 1/4 -0.15 u -0.15 u -0.15 u Rev.A 10-Apr-09 SS8550LT1
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SS8550LT1
OT-23
-20Vdc,
10-Apr-09
-80mAdc)
OT-23
sot-23 Marking 1HD
TOP marking 1HD
SOT-23 1HD
1hb marking
SS8550LT1
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sot-23 1Yd
Abstract: No abstract text available
Text: M8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 800 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 15-Jul-10 M8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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M8550LT1
OT-23
15-Jul-10
80mAdc)
sot-23 1Yd
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TK1-L2-12V
Abstract: TK1-5V tk19
Text: TESTING ULTRA LOW PROFILE 2 AMP. POLARIZED RELAY 10.6 .417 TK-RELAYS FEATURES 9.0 .354 • Low profile 4 mm .157 inch height • High contact capacity: 2 A • Surge withstand voltage between contact and coil: 2,500 V Bellcore rating 4.0 .157 mm inch SPECIFICATIONS
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tk19
Abstract: TK1-5V
Text: TESTING ULTRA LOW PROFILE 2 AMP. POLARIZED RELAY 10.6 .417 TK-RELAYS FEATURES 9.0 .354 • Low profile 4 mm .157 inch height • High contact capacity: 2 A • Surge withstand voltage between contact and coil: 2,500 V Bellcore rating 4.0 .157 mm inch SPECIFICATIONS
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Untitled
Abstract: No abstract text available
Text: M8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 800 300 2.4 417 25 0.1 40 100 5.0 100 35 4.0 WEITRON http://www.weitron.com.tw 1/4 0.15 u 0.15 u 15-Jul-10 M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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M8050LT1
OT-23
15-Jul-10
80mAdc)
OT-23
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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QQ30bRQ
O220AB
BUK456-800A/B
BUK456
-800A
-800B
K456-800A
bbS3T31
0030b84
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b b S a ^ l QQS77SQ 417 BFT44 BFT45 b^E B APX SILICON P-N-P HIGH-VOLTAGE TRANSISTORS Planar epitaxial transistors in TO-39 metal envelopes, intended as general purpose amplifiers and switching devices in industrial and telephone applications.
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QQS77SQ
BFT44
BFT45
00E7723
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bi 370 transistor e
Abstract: bi 370 transistor flyback Horizontal frequency kHz 15.625 BUH417 0/bi 370 transistor e
Text: rz 7 SGS-THOMSON Ä 7# X iM e iR iQ ilL isirœ œ ! £Ü H 417 CRT HORIZONTAL DEFÌECTÌÌ3N HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY . FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED
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BF418
Abstract: BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video
Text: BF 416 *BF418 PNP SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL Compì, of BF 415 and BF 417 Preferred device D isp o sitif recommandé Video output stages in T V sets Etages de sortie des amplificateurs Video dans ies téléviseurs
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BF416
BF418
O-126-
CB-16
BF418
BF416
J BF418
416 TRANSISTOR
BF transistor
BF417
transistor 417
Bf 417 g transistor
BF415
emetteur video
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honeywell memory sram
Abstract: 419B3E
Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec
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HR2210
1x106
1x1012rad
1x101
honeywell memory sram
419B3E
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BUH417
Abstract: 1156-2.5 700 v power transistor
Text: fZ 7 S C S - T H O M S O N Ä 7# [ Ä i m i O T 9 i * S BUH 417 CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY • FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED
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BUH417
BUH417
1156-2.5
700 v power transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband
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Q0311b7
BFG34
MSB037
ON4497)
OT103.
CECC50
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