MSM51V18160F
Abstract: SOJ42-P-400-1
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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Untitled
Abstract: No abstract text available
Text: GM71V64803C GM71VS64803CL LG Semicon Co.,Ltd. 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V64803C
GM71VS64803CL
GM71V
64803C/CL
64803C/CL-5
64803C/CL-6
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MSM51V18165
Abstract: No abstract text available
Text: J2G0133-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V18165D/DSL l MSM51V18165D/DSL 暫定 1,048,576-Wordx16-Bit DYNAMIC RAM：EDO機能付き高速ページモード n 概要 MSM51V18165D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラ
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J2G01331761
MSM51V18165D/DSL
MSM51V18165D/DSL
576Word
16Bit
MSM51V18165D/DSLCMOS1
42CMOS
42SOJ50/44TSOP
02416ms1
024128msSL
MSM51V18165
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IBM0165405B16M
Abstract: IBM0165405BJ3C-50 IBM0165405BJ3C-60 IBM0165405P16M TSOP-32
Text: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0165405B16M
IBM0165405P16M
IBM0165405B
IBM0165405P
104ns
SA14-4238-02
IBM0165405BJ3C-50
IBM0165405BJ3C-60
TSOP-32
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MSM51V18165F
Abstract: SOJ42-P-400-1
Text: FEDD51V18165F-01 1Semiconductor MSM51V18165F This version: August. 2000 Previous version : 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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FEDD51V18165F-01
MSM51V18165F
576-Word
16-Bit
MSM51V18165F
42-pin
SOJ42-P-400-1
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MSM51V18160F
Abstract: MSM51V18165F SOJ42-P-400-1
Text: Semiconductor This version:Oct.1999 MSM51V18160F 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word ´ 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM51V18160F achieves high integration, high-speed operation, and low-power consumption
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MSM51V18160F
576-Word
16-Bit
MSM51V18160F
576-word
42-pin
50/44-pin
MSM51V18165F
SOJ42-P-400-1
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Untitled
Abstract: No abstract text available
Text: GM71V64803C GM71VS64803CL 8,388,608 WORDS x 8 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)64803C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V64803C
GM71VS64803CL
GM71V
64803C/CL
64803C/CL-5
64803C/CL-6
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KAD5512P
Abstract: No abstract text available
Text: KAD5510P-50 Data Sheet October 8, 2009 FN6811.2 10-Bit, 500MSPS A/D Converter Features The KAD5510P-50 is a low-power, high-performance, 10-bit, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard
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KAD5510P-50
FN6811
10-Bit,
500MSPS
KAD5510P-50
14-bit
125MSPS
KAD5512P
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ms-024
Abstract: IBM0165165B4M IBM0165165P4M
Text: IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM ADVANCED Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0165165B4M
IBM0165165P4M
IBM0165165B
IBM0165165P
104ns
SA14-4239-02
ms-024
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Untitled
Abstract: No abstract text available
Text: J2G0131-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V18160D/DSL l MSM51V18160D/DSL 暫定 1,048,576-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V18160D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラ
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J2G01311761
MSM51V18160D/DSL
576Word
16Bit
MSM51V18160D/DSL
MSM51V18160D/DSLCMOS1
42CMOS
42SOJ50/44TSOP
02416ms1
024128msSL
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Untitled
Abstract: No abstract text available
Text: HY51V64800,HY51V65800 8Mx8, Fast Page mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64800
HY51V65800
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marking d3p
Abstract: KAD5512P 500MSPS KAD5510P-50 KAD5512P-50 KAD5514P-12 KAD5514P-17 KAD5514P-21 KAD5514P-25 tdc 310
Text: KAD5510P-50 Data Sheet January 30, 2009 FN6811.1 10-Bit, 500MSPS A/D Converter Features The KAD5510P-50 is a low-power, high-performance, 10-bit, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard
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KAD5510P-50
FN6811
10-Bit,
500MSPS
KAD5510P-50
14-bit
125MSPS
marking d3p
KAD5512P
KAD5512P-50
KAD5514P-12
KAD5514P-17
KAD5514P-21
KAD5514P-25
tdc 310
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marking D3N
Abstract: 500MSPS KAD5510P-50 KAD5512P-50 KAD5514P-12 KAD5514P-17 KAD5514P-21 KAD5514P-25 KAD5512P
Text: KAD5510P-50 Data Sheet October 8, 2009 FN6811.2 10-Bit, 500MSPS A/D Converter Features The KAD5510P-50 is a low-power, high-performance, 10-bit, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard
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KAD5510P-50
FN6811
10-Bit,
500MSPS
KAD5510P-50
14-bit
125MSPS
marking D3N
KAD5512P-50
KAD5514P-12
KAD5514P-17
KAD5514P-21
KAD5514P-25
KAD5512P
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jedec ms-024
Abstract: IBM0165805B8M IBM0165805BJ3C-50 IBM0165805BJ3C-60 IBM0165805P8M TSOP-32
Text: IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM ADVANCED Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0165805B8M
IBM0165805P8M
IBM0165805B
IBM0165805P
104ns
SA14-4241-02
jedec ms-024
IBM0165805BJ3C-50
IBM0165805BJ3C-60
TSOP-32
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MSM51V18160F
Abstract: SOJ42-P-400-1
Text: FEDD51V18160F-01 1Semiconductor MSM51V18160F This version: June. 2000 Previous version : 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate
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FEDD51V18160F-01
MSM51V18160F
576-Word
16-Bit
MSM51V18160F
42-pin
SOJ42-P-400-1
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Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P ADVANCED 8M x 8 12/11 E D O D R A M Features • 8,388,608 word by 8 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
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IBM0165805B
IBM0165805P
104ns
256ms
400fiA)
414mW
SA14-4241
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SOP-54
Abstract: SOP54 F0600 F06-00
Text: HYUNDAI HY51V64160 Series 4M X 16-bit CMOS ORAM with 2 CAS ADVANCED INFORMATION DESCRIPTION The HY51V64160 is the new generation and fast dynamic RAM organized 4,194,304 x 16-bit. The HY51V64160 utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V64160
16-bit
16-bit.
familie13
512ms
A0-A12*
DQ0-DQ15
SOP-54
SOP54
F0600
F06-00
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Untitled
Abstract: No abstract text available
Text: ««YUHDAI > ♦ HY51 V64800,H Y51V65800 8Mx8, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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V64800
Y51V65800
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V64800, HY51V65800 8Mx8, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 8,388,608 x 8-bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow
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HY51V64800,
HY51V65800
0-A12)
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0165165PT3C-60
Abstract: No abstract text available
Text: IBM0165165B IBM0165165P ADVANCED 4M X 16 1 2 / 1 0 E D O D R A M Features • 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time
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IBM0165165B
IBM0165165P
256ms
104ns
414mW
SA14-4239-02
0165165PT3C-60
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Untitled
Abstract: No abstract text available
Text: HM51W16165 Series HM51W18165 Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-650A Z Rev 1.0 Sep. 30, 1996 Description The Hitachi HM51W16165 Series and HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word X 16-bit. They employ the most advanced CMOS technology for high performance and
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HM51W16165
HM51W18165
1048576-word
16-bit
ADE-203-650A
576-word
16-bit.
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Untitled
Abstract: No abstract text available
Text: HY51V64400 Series •HYUNDAI 16Mx 4-bit CMOS DRAM ADVANCED INFORMATION DESCRIPTION The HY51V64400 is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V64400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V64400
HY51V64400
A0-A12*
1AF02-00-M
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Untitled
Abstract: No abstract text available
Text: IBM0165405B IBM0165405P ADVANCED 16M x 4 12/12 E D O D R A M Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: ; • Extended Data Out Hyper Page Mode • CAS before RAS Refresh
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IBM0165405B
IBM0165405P
256ms
400fiA)
104ns
414mW
SA14-4238-02
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Untitled
Abstract: No abstract text available
Text: TO SH IB A THLY644031 FG-10,-12 T E N T A T IV E T O S H IB A H Y B R ID D IG IT A L IN T E G R A T E D C IR C U IT 4,194,304 WORDS x 64 BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY644031FG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled 4
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THLY644031
FG-10
THLY644031FG
TC59S6416FT
108ns
104mW
966mW
0l-DdLE0t7t79AlHl
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