lh28f800bvhe-tv85
Abstract: LH28F128BFHED LH28F128BFHED-PWTL90 LH28F160S5HNS-L70 LH5116H-10 LH28F160S3HNS-L10 lh28f128bfht-pw LH28F320S5HNS-L90 LH28F008BJT-BTLZ1 Product Selector Guide
Text: Memory Product Selector Guide SYMMETRICAL FLASH DENSITY PRODUCT FAMILY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 5V LH28F008SAHT-85 8M Cobra x8 3 V, 5 V or 12 V
|
Original
|
PDF
|
LH28F008SCT-L12
40TSOP
LH28F008SAT-85
LH28F008SAHT-85
LH28F008SAN-85
LH28F008SAN-12
44SOP
LH28F008SCHT-L85
LH28F008SCT-L85
lh28f800bvhe-tv85
LH28F128BFHED
LH28F128BFHED-PWTL90
LH28F160S5HNS-L70
LH5116H-10
LH28F160S3HNS-L10
lh28f128bfht-pw
LH28F320S5HNS-L90
LH28F008BJT-BTLZ1
Product Selector Guide
|
LH28F128SPHTD-PTL12
Abstract: 56TSOP lh28f800bvhe-tv85 lh5116h10 LH28F320SKTD-L70 LRS1826A TV85 LH28F008SC LH28F160S5T-L70A LH52256CHN-70LL
Text: Memory Product Selector Guide 8M AND 16M SYMMETRICAL FLASH DENSITY ORG. PART NUMBER PACKAGE READ VOLTAGE PROGRAM VOLTAGE LH28F008SCT-L85 LH28F008SCHT-L85 LH28F008SCT-L12 3 V or 5 V 40TSOP LH28F008SAT-85 x8 85 I 120 C 85 C 85 I 85 C 120 C 12 V LH28F008SCN-L85
|
Original
|
PDF
|
LH28F008SCHT-L85
LH28F008SCT-L12
40TSOP
LH28F008SAT-85
LH28F008SCT-L85
LH28F008SCN-L85
LH28F008SAR-85
LH28F008SAHT-85
LH28F008SAN-85
ID242K01
LH28F128SPHTD-PTL12
56TSOP
lh28f800bvhe-tv85
lh5116h10
LH28F320SKTD-L70
LRS1826A
TV85
LH28F008SC
LH28F160S5T-L70A
LH52256CHN-70LL
|
Untitled
Abstract: No abstract text available
Text: EFST F49L004UA / F49L004BA 4 Mbit 512K x 8 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z Compatible with JEDEC standard - Pinout, packages and software commands compatible with single-power supply Flash
|
Original
|
PDF
|
F49L004UA
F49L004BA
|
23c8100
Abstract: MX23C8100 MX23C8100MC-10 MX23C8100MC-12 MX23C8100MC-15 MX23C8100PC-10 MX23C8100PC-12 MX23C8100PC-15 MX23C8100TC-10 MX23C8100TC-12
Text: MX23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%
|
Original
|
PDF
|
MX23C8100
100ns
500mil)
600mil)
MX23C8100PC-10
MX23C8100PC-12
120ns
MX23C8100PC-15
150ns
23c8100
MX23C8100
MX23C8100MC-10
MX23C8100MC-12
MX23C8100MC-15
MX23C8100PC-10
MX23C8100PC-12
MX23C8100PC-15
MX23C8100TC-10
MX23C8100TC-12
|
MT48LC8M16A2
Abstract: PC15 RTL8201BL header8 DB9_MALE AT45DB128
Text: Port C Pins assignment 104 PB22/SCK1 as UART1 RI Input 122 PB27/PCK0 as UART1 DTR (Output) ADDR12 not connected to U3,U4 ADDR13 connected to U3.A11,U4.A11 See Page 139 Man.rev.from 22-Aug-03 R11 10 C27 0.1uF R14 10 C30 0.1uF R18 10 C19 0.1uF VDDPLL PLLRCA
|
Original
|
PDF
|
XOUT32
XIN32
680pF
470pF
MAX3241E
MAX3243E
MAX3244E
MAX3245E
SP3243
IRU1117-18CY
MT48LC8M16A2
PC15
RTL8201BL
header8
DB9_MALE
AT45DB128
|
Untitled
Abstract: No abstract text available
Text: MX29LV004T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55R/70/90ns
|
Original
|
PDF
|
MX29LV004T/B
55R/70/90ns
16K-Byte
32K-Byte
64K-Byte
Resumn--32
PM0732
FEB/27/2002
APR/18/2002
JUL/03/2002
|
lh28f320bjd
Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
Text: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.
|
Original
|
PDF
|
November/1/2003
LH28F008BJ
LH28F008BJT-TTLxx
LH28F008BJT-BTLxx
40TSOP
LHF00L02
LHF00L03
lh28f320bjd
HI-LO SYSTEMS all11
LH28F320BJD-TTL
LRS13A8
minato Model 1890A
AF-9706
lh28f128bfht-pw
LH28F128BFHED
AF9706
AF9723
|
pal 007c
Abstract: b1100 nec LDP16 sulzer s7 7-segment countdown timer MDP36 100LQ128 3pin round shell connector DP83932B LT1084CT-3.3
Text: MiniRISC BDMR4011 Evaluation Board User’s Guide A CoreWare® Product March 1998 ® Order Number XXXXX Document DB15-000055-00, First Edition March 1998 This document describes revision A of LSI Logic Corporation’s BDMR4011 Evaluation Board and will remain the official reference source for all revisions/releases of this product until rescinded by an update.
|
Original
|
PDF
|
BDMR4011
DB15-000055-00,
respons3580
pal 007c
b1100 nec
LDP16
sulzer s7
7-segment countdown timer
MDP36
100LQ128
3pin round shell connector
DP83932B
LT1084CT-3.3
|
AB-65
Abstract: E28F800B5 intel e28F400b5 44-PSOP 44PSOP 29219* intel
Text: E AB-65 APPLICATION BRIEF Migrating SmartVoltage Boot Block Flash Designs to Smart 5 Flash December 1997 Order Number: 292194-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
|
Original
|
PDF
|
AB-65
44-PSOP
40-TSOP
48-TSOP
56-TSOP
AB-65
E28F800B5
intel e28F400b5
44-PSOP
44PSOP
29219* intel
|
Untitled
Abstract: No abstract text available
Text: Introduction Selection Guide PRELIMINARY MX29L8000T/B 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM FEATURES • Extended single-supply voltage range 2.7V to 3.6V for read and write • JEDEC-standard EEPROM commands • Endurance : 100,000 cycles
|
Original
|
PDF
|
MX29L8000T/B
120ns
16K-block)
16K-block
|
28F002-T
Abstract: 3A00 28F002T MX28F002 MX28F002-B MX28F002-T
Text: Introduction Selection Guide MX28F002T/B 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current • Programming and erasing voltage 12V ± 5%
|
Original
|
PDF
|
MX28F002T/B
70/90/120ns
16K-Byte
96K-Byte
128K-Byte
100mA
28F002-T
3A00
28F002T
MX28F002
MX28F002-B
MX28F002-T
|
E28F800B5
Abstract: AB-65 56-TSOP intel e28F400b5 29219* intel
Text: AB-65 APPLICATION BRIEF Migrating SmartVoltage Boot Block Flash Designs to Smart 5 Flash December 1996 Order Number: 292194-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of
|
Original
|
PDF
|
AB-65
E28F800B5
AB-65
56-TSOP
intel e28F400b5
29219* intel
|
MX29LV004T
Abstract: SA10
Text: PRELIMINARY MX29LV004T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation
|
Original
|
PDF
|
MX29LV004T/B
55R/70/90ns
16K-Byte
32K-Byte
64K-Byte
PM0732
MX29LV004T
SA10
|
28f040
Abstract: LH28F008SA LH28F040SUTD-Z4
Text: LH28F040SUTD-Z4 FEATURES • 512K x 8 Bit Configuration • 5 V Write/Erase Operation 5 V VPP, 3.3 VCC – VCC for Write/Erase at as low as 2.9 V • Min. 2.7 V Read Capability – 190 ns Maximum Access Time (VCC = 2.7 V) • 2 Banks Enable the Simultaneous
|
Original
|
PDF
|
LH28F040SUTD-Z4
40-PIN
J63428
SMT96117
28f040
LH28F008SA
LH28F040SUTD-Z4
|
|
Untitled
Abstract: No abstract text available
Text: MX29LV002C/002NC T/B MX29LV004C T/B MX29LV008C T/B CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte mode only: - 262,411 x8 MX29LV002C/002NC - 524,288 x8 (MX29LV004C) - 1,048,576 x8 (MX29LV008C) • Sector Structure - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1
|
Original
|
PDF
|
MX29LV002C/002NC
MX29LV004C
MX29LV008C
MX29LV002C/002NC)
MX29LV004C)
MX29LV008C)
16K-Byte
32K-Byte
64K-Byte
MX29LV002C)
|
ATMEL 736 8pin IC
Abstract: ATMEL BIOS AT49lh00b4
Text: Features • Complies with Intel Low-Pin Count LPC Interface Specification Revision 1.1 – Supports both Firmware Hub (FWH) and LPC Memory Read and Write Cycles • Auto-detection of FWH and LPC Memory Cycles • • • • • • • – Can Be Used as FWH for Intel 8xx, E7xxx, and E8xxx Series Chipsets
|
Original
|
PDF
|
64-Kbyte
32-Kbyte
16-Kbyte
3379C
ATMEL 736 8pin IC
ATMEL BIOS AT49lh00b4
|
Untitled
Abstract: No abstract text available
Text: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)
|
Original
|
PDF
|
MX27C1100/27C1024
8/64K
MX27C1024,
100uA
MX27C1100,
40pin
MX27C1024
MX27C1024)
MX27C1100)
FEB/25/2000
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV004C T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation
|
Original
|
PDF
|
MX29LV004C
MX29LV004T/B
70/90ns
16K-Byte
32K-Byte
64K-Byte
|
49LF040B
Abstract: 49LF040B 33-4C-NHE sst49lf040b-33-4c-nhe datasheet SST49LF040B CL1226
Text: 4 Mbit LPC Flash SST49LF040B SST49LF040B4Mb LPC Flash memory Advance Information FEATURES: • 4 Mbit SuperFlash Memory Array for Code or Data Storage – SST49LF040B: 512K x8 4 Mbit • Conforms to Intel LPC Interface Specification – Supports Single-Byte LPC Memory Cycle
|
Original
|
PDF
|
SST49LF040B
SST49LF040B4Mb
SST49LF040B:
40-TSOP
S71226-03-000
49LF040B
49LF040B 33-4C-NHE
sst49lf040b-33-4c-nhe datasheet
SST49LF040B
CL1226
|
SST31LF041
Abstract: SST31LF041A SST31LF043 SST31LF043A
Text: 4 Mbit Flash + 1 Mbit / 256 Kbit SRAM ComboMemory SST31LF041 / SST31LF041A / SST31LF043 / SST31LF043A SST31LF041 / 041A / 043 / 043A4Mb Flash x8 + 1Mb / 256Kb SRAM (x8) Monolithic ComboMemories Preliminary Specifications FEATURES: • Monolithic Flash + SRAM ComboMemory
|
Original
|
PDF
|
SST31LF041
SST31LF041A
SST31LF043
SST31LF043A
043A4Mb
256Kb
SST31LF041/041A:
SST31LF043/043A:
MO-142
SST31LF043A
|
lh5s4
Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
Text: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.
|
OCR Scan
|
PDF
|
LH53H4100
LH53H4100D/N
LH5H41XX)
LH53H4100D
LH53H4100N
32-pin
DIP032-P-0600)
OP032-P-0525)
A0-A18
lh5s4
lh5348
LH5s
lh5s47xx
48-TSOP
LH53H4100N
lh534y00d
48TSOP
sharp mask rom
|
536G
Abstract: LH534600
Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)
|
OCR Scan
|
PDF
|
LH53259D/N/T
LH53517D/N/T/TR
LH531VOOD/N/TAJ
LH53V1ROON/T
LH530800AD/AN/AU
LHS30800AD/AN-Y
LH531OOOBD/BN
LH531000BN-S
LH531024D/N/U
LH532100BD
536G
LH534600
|
LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
|
OCR Scan
|
PDF
|
28DIP
28DIP
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235
|
sharp mask rom
Abstract: No abstract text available
Text: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH
|
OCR Scan
|
PDF
|
LR-S13011
LR-S1302
LR-S1304
LR-S1303
LR-S1313
LR-S1306
LR-S1305A
LR-S1307
56FBGA
72FBGA
sharp mask rom
|