28f800b5
Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Text: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
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AB-60
AP-611
AB-65
28f800b5
28F002BC
28F008
28F200B5
28F800
AB-60
28f400
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28F002-T
Abstract: 3A00 28F002T MX28F002 MX28F002-B MX28F002-T
Text: Introduction Selection Guide 28F002T/B 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current • Programming and erasing voltage 12V ± 5%
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MX28F002T/B
70/90/120ns
16K-Byte
96K-Byte
128K-Byte
100mA
28F002-T
3A00
28F002T
MX28F002
MX28F002-B
MX28F002-T
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28f400 BYTE PROGRAM
Abstract: 28F800T transistor CC 11 A 28F008SA 28F400 28F800 AB-60 intel DOC 1024Kx8 intel 28F400
Text: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview COLLIN K. ONG TECHNICAL MARKETING ENGINEER September 1995 Order Number: 292154-002 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including
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AB-60
28F800
28F008,
28f400 BYTE PROGRAM
28F800T
transistor CC 11 A
28F008SA
28F400
AB-60
intel DOC
1024Kx8
intel 28F400
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Untitled
Abstract: No abstract text available
Text: 28F002T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES – Auto Erase with Erase Suspend capability • Status Register feature for Device status detection • Absolute Hardware-Protection for Boot Sector • Auto Erase sector and Auto Program – Status Registers
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MX28F002T/B
100mA
40-pin
70/90/120ns
100uA
PM0438
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fujitsu 29LV160B
Abstract: 29F800B 29LV160B 29F160B m29f800bb
Text: JTAG-Booster for AMD ÉlanSC520 P.O. Box 1103 Kueferstrasse 8 +49 (7667 908-0 sales@fsforth.de l l l l D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for AMD ÉlanSC520 Copyright 1995.2002:
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lanSC520
D-79200
D-79206
lanSC520
fujitsu 29LV160B
29F800B
29LV160B
29F160B
m29f800bb
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intel 28F200
Abstract: 56-Lead TSOP Package E28F200CVB60 e28f200cv-b60 29053 TB28F200BVT80
Text: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology 5V or 12V Program/Erase 3.3V or 5V Read Operation Increased Programming Throughput at 12V VPP
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28F200BV-T/B,
28F200CV-T/B,
28F002BV-T/B
BV-60
TBV80
BV-80
BV-120
BV-80,
BV-60,
intel 28F200
56-Lead TSOP Package
E28F200CVB60
e28f200cv-b60
29053
TB28F200BVT80
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LEAPER-3
Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Text: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.
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PIC16C52/54/54A
PIC16C55/56/57/57A/58A
PIC12C508/509
PIC16C61
PIC16C620/621/622
PIC16C71/710
PIC16C62/63/64/65
PICC16C72/73/74/74A
PIC16C83/84
PIC17C42/42A/43/44
LEAPER-3
74189
7489 sram
4N34
89C51 interfacing with lcd display
ic 74192 pin configuration
interfacing 20x4 LCD with 89c51
IC 74189 DATA
LEAP-U1
LEAPER-10 driver
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28F002-T
Abstract: No abstract text available
Text: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package
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28F200-T
28F200-B
28F002-T
28F002-B
28F020
MX28F2100T
MX28F2100B
MX28F002-T
MX28F002-B
MX28F2000P
28F002-T
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Untitled
Abstract: No abstract text available
Text: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n n n Intel SmartVoltage Technology 5V or 12V Program/Erase 3.3V or 5V Read Operation Increased Programming Throughput
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28F200BV-T/B,
28F200CV-T/B,
28F002BV-T/B
x8/x16-Selectable
28F200
32-bit
28F002B
28F002/400BX-T/B
28F002/400BL-T/B
AP-604
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MX-1610
Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
Text: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY
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MX26C512A
MX26C1000A
MX26C1024A
MX25L4004A
MX29F1610
MX26C512A,
512K-bit
MX26C512A
MX9691
MX-1610
intel 28f200
db86082
mx1610
intel 80586
MX28F002
MXIC flash disk controller
db86082b
MX26C1000A
KM29N32000
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29lv640
Abstract: HC-36/29lv640
Text: JTAG-Booster for IDT RC64145 FORTH-SYSTEME GmbH P.O. Box 11 03 Kueferstrasse 8 l D-79200 Breisach, Germany l D-79206 Breisach, Germany +49 (7667 908-0 l Fax +49 (7667) 908-200 l e-mail: sales@fsforth.de JTAG-Booster for IDT 64145 Copyright 1995.2000:
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RC64145
D-79200
D-79206
JTAG145a
RC64145:
DATA16.
ADR12.
29lv640
HC-36/29lv640
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DB25-Connector
Abstract: I28F008 29lv004b 29LV008B AMD29LV400B i28F016 AM29LV400BW I28F200 amd 29F010 flash memory 29F800T jtag
Text: Description of JTAG-Booster for AMD ÉlanSC400 Description of JTAG-Booster for AMD ÉlanSC400 Program Version 2.2 Dieter Fögele JTAGEL4.DOC 1 Description of JTAG-Booster for AMD ÉlanSC400 Copyright 1997: FS FORTH-SYSTEME GmbH Postfach 1103, D-79200 Breisach, Germany
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lanSC400
D-79200
JTAG386
Intel386TM
DB25-Connector
I28F008
29lv004b
29LV008B
AMD29LV400B
i28F016
AM29LV400BW
I28F200
amd 29F010 flash memory
29F800T jtag
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intel 28F400
Abstract: No abstract text available
Text: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n Intel SmartVoltage Technology 5 V or 12 V Program/Erase 3.3 V or 5 V Read Operation Very High-Performance Read
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28F200BV-T/B,
28F200CV-T/B,
28F002BV-T/B
x8/x16-Selectable
28F200
32-bit
28F002B
16-KB
96-KB
128-KB
intel 28F400
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Untitled
Abstract: No abstract text available
Text: MXIC M X 28F002T/B 2 M - B I T J 2 5 6 K x 8 C M O S FLA SH M E M O R Y FEATURES 262,144x8 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100jiAmaximum standby current Programming and erasing voltage 12V ± 5%
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MX28F002T/B
144x8
70/90/120ns
100jiAmaximum
16K-Byte
96K-Byte
128K-Byte
100mA
QGQ117ti
MX2SF002T/B
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Untitled
Abstract: No abstract text available
Text: irrigl, PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput
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28F200BV-T/B,
28F200CV-T/B,
28F002BV-T/B
28F002/400BX-
28F002/400BL-T/B
AP-604
AP-617
AB-57
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MT28F002
Abstract: SR50
Text: PRELIMINARY MICRON 1 MT28F002 256K x 8 FLASH MEMORY -• - 256K x 8 I FLASH MEMORY FEATURES • Five erase blocks: 16K B bo o t b lo ck protected T w o 8K B p a ra m eter b lo ck s T w o m ain m em o ry b locks • 5V ±10% V c c; 12V ±5% V pp • A d d ress access tim es: 60n s, 80ns, 100ns
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MT28F002
100ns
V/12V,
40-Pin
SR50
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Untitled
Abstract: No abstract text available
Text: P I H i@ y T 1F [ ^ 1 ¥ D 0 in te l 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at
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28F200BV-T/B,
28F002BV-T/B,
28F200CV-T/B
Susp148
AP-604
28F002/200BX-T/B
28F002/200BL-T/B
28F004/400BL-T/B
28F004/400BX-T/B
AB-57
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Untitled
Abstract: No abstract text available
Text: MXIC 28F002T/ B 2 M -BIT[2 5 6 K X 8 ] CMOS FLASH MEMORY FEATURES 262,144 bytes by 8-bit organization Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 10OnAmaximum standby current Programming and erasing voltage 12V ± 5%
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MX28F002T/
70/90/120ns
10OnAmaximum
16K-Byte
96K-Byte
128K-Byte
100mA
40lln
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Untitled
Abstract: No abstract text available
Text: iir tls J W W C T [p ^l¥0i 2-MBIT (128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at
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28F200BV-T/B,
28F002BV-T/B,
28F200CV-T/B
28F004/400B
28F002/200B
USA/1294/8K/MS
4fl2fal75
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Untitled
Abstract: No abstract text available
Text: inteJ PKiOBflOMÄl 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput
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28F200BV-T/B,
28F200CV-T/B,
28F002BV-T/B
BV-60
TBV-80
BV-80
BV-120
BV-80,
BV-60,
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Untitled
Abstract: No abstract text available
Text: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B m Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 3.3 V or 5 V Read Operation • Very High-Performance Read — 5 V: 60 ns Access Time — 3 V: 110 ns Access Time
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28F200BV-T/B,
28F200CV-T/B,
28F002BV-T/B
x8/x16-Selectable
28F200for
32-bit
28F002B
16-KB
96-KB
128-KB
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Untitled
Abstract: No abstract text available
Text: iny» AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview September 1995 I Order Number: 292154-002 2-17 AB-60 1.0 INTRODUCTION T h is document includes a feature overview , pinouts, and m em ory maps fo r Intel’ s Sm artVoltage boot b lo ck
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AB-60
AB-60
48-Lead
28F800
28F008
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