IRFD310
Abstract: TB334
Text: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFD310
IRFD310
TB334
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IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF320
TA17404.
IRFF320
TA17404
TB334
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IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP350
TA17434.
IRFP350
TB334
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IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFP350
O-247
IRFP350
TB334
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IRFF330
Abstract: TA17414 TB334
Text: IRFF330 Data Sheet January 2002 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF330
TA17414.
IRFF330
TA17414
TB334
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IRFD310
Abstract: TB334 400V to 6V DC Regulator TO 220 Package
Text: IRFD310 Data Sheet July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2324.4 Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFD310
IRFD310
TB334
400V to 6V DC Regulator TO 220 Package
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IRFD320
Abstract: TA17404 TB334
Text: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFD320
IRFD320
TA17404
TB334
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6EP1437-1SL11
Abstract: siemens sitop power 40 6ep1437-1sl11 siemens sitop power 20 6ep1336-1SH01 siemens 3VU1300 SITOP 40A 24V Sitop 6EP1437-1sl11 siemens sitop 40A SIEMENS, SITOP Power 40, 6EP1437-1sl11 6EP1336-1SH01 3VU1300
Text: SITOP Power Supplies Technical European Applications Only 6EP1336-1SH01 6EP1732-0AA00 6EP1437-1SL01 6EP1437-1SL11 SITOP Power Single-Phase/3-Phase Technical Specification Euro Line SITOP power DC 24V/2A Single-Phase 230V 24V/20A 3-Phase 400V 24V/30A 3-Phase 400V
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6EP1336-1SH01
6EP1732-0AA00
6EP1437-1SL01
6EP1437-1SL11
4V/20A
4V/30A
4V/40A
6EP1437-1SL11
siemens sitop power 40 6ep1437-1sl11
siemens sitop power 20 6ep1336-1SH01
siemens 3VU1300
SITOP 40A 24V
Sitop 6EP1437-1sl11
siemens sitop 40A
SIEMENS, SITOP Power 40, 6EP1437-1sl11
6EP1336-1SH01
3VU1300
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IRFF310
Abstract: TB334
Text: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF310
IRFF310
TB334
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IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF320
TA17404.
IRFF320
TA17404
TB334
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IRFF330
Abstract: TA17414 TB334
Text: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF330
TA17414.
O-205AF
IRFF330
TA17414
TB334
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * 10A, 400V, R DS ON (0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds
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UF740
O-220F1
O-220F2
O-220F
O-220
O-263
QW-R502-078.
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IRF330
Abstract: TA17414 TB334 204AA
Text: IRF330 Data Sheet March 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET 1570.4 Features • 5.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF330
TA17414.
IRF330
TA17414
TB334
204AA
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TOT - 4301
Abstract: LA 4303 IRFD320 TA17404 TB334
Text: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFD320
TB334
TA17404.
TOT - 4301
LA 4303
IRFD320
TA17404
TB334
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IRFF310
Abstract: TB334
Text: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFF310
TB334
TA17444.
IRFF310
TB334
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IRFP340
Abstract: TA17424 TB334
Text: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFP340
O-247
IRFP340
TA17424
TB334
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IRFP340
Abstract: TA17424 TB334 T2T-2
Text: IRFP340 Data Sheet July 1999 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 11A, 400V Ordering Information IRFP340 TO-247 • rDS ON = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
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IRFP340
O-247
TB334
TA17424.
IRFP340
TA17424
TB334
T2T-2
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ifr320
Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
Text: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF320,
IRF321,
IRF322,
IRF323
ifr320
IRF320
IRF322
TB334
IRF321
IRF323
TA17404
irf3202
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Untitled
Abstract: No abstract text available
Text: IRFP350, IRFP351, IRFP352, IRFP353 14A and 16A, 350V and 400V, 0.3 and 0.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 16A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRFP350,
IRFP351,
IRFP352,
IRFP353
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PDF
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IRF332
Abstract: IRF3319 irf330
Text: I LArrrti— IRF330, IRF3319 IRF332, IRF333 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRF330,
IRF3319
IRF332,
IRF333
TA17414.
IRF331,
RF333
IRF332
irf330
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irff330
Abstract: No abstract text available
Text: y*Rg*s IRFF330, IRFF331, IRFF332, IRFF333 3.0A and 3.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 3.0A and 3.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRFF330,
IRFF331,
IRFF332,
IRFF333
irff330
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFD320 S em iconductor Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1 -800i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRFD320
-800i2
TB334
TA17404.
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PDF
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IRF730
Abstract: IRF731 irf730 harris TA17414
Text: h a f r r is IRF730, IRF731, IRF732, IRF733 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRF730,
IRF731,
IRF732,
IRF733
TA17414.
RF732,
RF733
IRF730
IRF731
irf730 harris
TA17414
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PDF
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irfp350
Abstract: IRFP350 harris IRFP351
Text: h a r r is IRFP350, IRFP351, IRFP352, IRFP353 14A and 16A, 350V and 400V, 0.3 and 0.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 16A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRFP350,
IRFP351,
IRFP352,
IRFP353
TA17434.
16CHARGE
irfp350
IRFP350 harris
IRFP351
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