100v 3A silicon controlled rectifier
Abstract: E91231 IS605 IS6051 rectifier 400V 5A light activated scr
Text: IS6051 LOW INPUT CURRENT INFRA-RED EMITTING DIODE & LIGHT ACTIVATED SCR Dimensions in mm 2.54 APPROVALS l UL recognised, File No. E91231 7.0 6.0 7.62 max. DESCRIPTION The IS6051 is an optically coupled isolator consisting of infrared light emitting diode and a
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IS6051
E91231
IS6051
DB92611-AAS/A2
100v 3A silicon controlled rectifier
E91231
IS605
rectifier 400V 5A
light activated scr
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Transistor GK 0.9
Abstract: GK transistor DIODE 11 gk H11C1 H11C1X H11C2 H11C2X H11C3 H11C3X H11C4X
Text: H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X H11C1, H11C2, H11C3, H11C4, H11C5, H11C6 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS
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H11C1X,
H11C2X,
H11C3X,
H11C4X,
H11C5X,
H11C6X
H11C1,
H11C2,
H11C3,
H11C4,
Transistor GK 0.9
GK transistor
DIODE 11 gk
H11C1
H11C1X
H11C2
H11C2X
H11C3
H11C3X
H11C4X
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IS606
Abstract: Isocom Components IS606 rgk 13 VAK* IS605 E91231 IS605 light activated scr VTM resistor 56k
Text: IS605, IS606 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 1.2 DESCRIPTION The IS605, IS606 are optically coupled isolators consisting of infrared light emitting diode and a
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IS605,
IS606
E91231
IS606
DB92481m-AAS/A1
Isocom Components IS606
rgk 13
VAK* IS605
E91231
IS605
light activated scr
VTM resistor 56k
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MCS2400
Abstract: TURN ON AND TURN OFF SCR input id E91231 MCS2400X scr 200v 3a MCS22 transistor DC 27K
Text: MCS2400X MCS2400,MCS2 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form 7.62
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MCS2400X
MCS2400
E91231
DB92283-AAS/A3
TURN ON AND TURN OFF SCR input id
E91231
MCS2400X
scr 200v 3a
MCS22
transistor DC 27K
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H11C1
Abstract: H11C1X H11C2 H11C2X H11C3 H11C3X H11C4 H11C4X H11C5 H11C5X
Text: H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X H11C1, H11C2, H11C3, H11C4, H11C5, H11C6 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS
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H11C1X,
H11C2X,
H11C3X,
H11C4X,
H11C5X,
H11C6X
H11C1,
H11C2,
H11C3,
H11C4,
H11C1
H11C1X
H11C2
H11C2X
H11C3
H11C3X
H11C4
H11C4X
H11C5
H11C5X
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4N39-4N40
Abstract: scr 200v 3a 4N39 4N40 E91231
Text: 4N39X, 4N40X 4N39, 4N40 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form 7.62
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4N39X,
4N40X
E91231
DB91033-AAS/A3
4N39-4N40
scr 200v 3a
4N39
4N40
E91231
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CNY30
Abstract: CNY30X, CNY34X CNY30, CNY34 rgk 13 CNY30X CNY34 CNY34X E91231 CNY30-CNY34
Text: CNY30X, CNY34X CNY30, CNY34 PHOTON COUPLED ISOLATOR Ga As LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form 7.62 max. 1 6 2 5 3 4 8.3 max.
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CNY30X,
CNY34X
CNY30,
CNY34
E91231
CNY34
DB91039-AAS/A3
CNY30
CNY30X, CNY34X CNY30, CNY34
rgk 13
CNY30X
CNY34X
E91231
CNY30-CNY34
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3310S06S
Abstract: 1W 10V ZENER DIODE A26568-ND 1N4148 equivalent SMD
Text: IRAUDAMP16 70W/4 x 2 Channel Class D Audio Power Amplifier Using the IR4302 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP16 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP16
IR4302
IRAUDAMP16
Figure25
Figure26
AN1170
Figure27
3310S06S
1W 10V ZENER DIODE
A26568-ND
1N4148 equivalent SMD
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diode z104
Abstract: 3.1v 0.5w ZENER DIODE 1N4148 equivalent SMD
Text: IRAUDAMP12 130W/4 x 2 Channel Class D Audio Power Amplifier Using the IR4301 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP12 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP12
30W/4
IR4301
IRAUDAMP12
diode z104
3.1v 0.5w ZENER DIODE
1N4148 equivalent SMD
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DIODE SMD J9
Abstract: No abstract text available
Text: IRAUDAMP12 130W/4Ω x 2 Channel Class D Audio Power Amplifier Using the IR4301 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP12 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP12
30W/4â
IR4301
IRAUDAMP12
Fig21â
DIODE SMD J9
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72J5420
Abstract: No abstract text available
Text: IRAUDAMP16 70W/4Ω x 2 Channel Class D Audio Power Amplifier Using the IR4302 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP16 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP16
IR4302
IRAUDAMP16
Figure25
Figure26
AN1170
Figure27
72J5420
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CS5170
Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
Janua667
CS5170
mps2112
MPS2112ZL1
100A 300V IGBT
MC3346P
CS4124YDW16
ON Semiconductor PRICE BOOK
12V to 220V smps inverter
bd234
igbt ac motor speed control
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CS5170
Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
CS5170
MUR1620CTA
NTP3055
SBRS81100T3G
MC1741CP
2N5458 SUBSTITUTE
SPEED CONTROL of DC MOTOR tda1085c
DIODE SWCH 100V SS SOT23 TR
znr SF 471
NCP1200AP60
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10C2
Abstract: ULTRA FAST diode 400v 5a vrrm 400v if 20A ultra fast recovery diode 5GUZ47 markT2
Text: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5GUZ47 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 43.2 ± 0.2 10.3MAX. • Repetitive Peak Reverse Voltage V = 400V • Average Output Rectified Current I0 = 5A
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5GUZ47
100ns
961001EAA2'
10C2
ULTRA FAST diode 400v 5a
vrrm 400v if 20A ultra fast recovery diode
5GUZ47
markT2
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2SK385
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE 7T-MOS 2SK385 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 20.5MAX. I FEATURES: . High Breakdown. Voltage : V(jjf>)Dsg=400V
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t100nA
2SK385
2SK385
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Diode LT 443
Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
Text: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.
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HGTP10N40C1D,
HGTP10N40E1D
HGTP10N50C1D,
HGTP10N50E1D
TD-220AB
TP10N
AN7254
AN7260)
Diode LT 443
diode lt 823
948 LG DIODE
gep 45 diode
100A-4V
HGTP10N40C1D
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } ‘n DE 1 ^ 7 5 5 1 ] 99D 16659 9097250 TOSHIBA <DISCRETE/OPTO ¿/oih'ilu DDltbSi a f i - n - s TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2SK38 5 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS
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2SK38
100nA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 5GLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE R fil 7 A 7 A • ar 'w ■ » m SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage • Ultra Fast Reverse-Recovery Time : tpr = 35ns
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5GLZ47A
961001EAA2'
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TRANSISTOR BDX
Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T
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BUV48
BUV47
O-22CIAB
CB-117
BUV37
CB-244
CB-285
TRANSISTOR BDX
TRANSISTOR BDX 285
pnp transistor 1000v
TRANSISTOR BDX 53
transistor BDX 65
transistor BDX 80
bux diode
darlington NPN 1000V isotop
DARLINGTON ESM 749
transistor BU 184
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE s r ; I J 7 A 7m wmr SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • § • • Repetitive Peak Reverse Voltage : Vr r m = 400V Average Output Rsctiiisd Currsnt ’ I q —5A
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5GUZ47
100ns
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: pn rt y nor Ihe e x p r e s s written third and he In lor the way be herein neither w hatsoever Is Ilie Die uso of any w ithout ol c op ied , property purposes lor reproduced, C o., Lid. m an ufacturin g »hall in form nli o n any c o n s e n t ot Fuji Electric
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MS5F-4083
June-11-1998
1MBH05D-060-S06TT
MS5F4083
H04-004-03
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12-10C2
Abstract: No abstract text available
Text: 5GLZ47A SILICON EPITAXIAL TYPE HIGH EFFICIENCY RECTIFIER O SWITCHING TYPE POWER SUPPLY APPLICATION. O CONVERTER & CHOPPER APPLICATION. Unit in mm 10.3M AX. , • Repetitive Peak Reverse Voltage : Vr r m = 400V • Ultra Fast Reverse-Recovery Time : trr=35ns
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5GLZ47A
12-10C2
5GLZ47
5GLZ47A
12-10C2
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2SK324
Abstract: f664
Text: TOSHIBA {DISCRETE/OPTO} ^ ß F I ^ D i T a S D 9097250 TOSHIBA DISCRETE/OPTO {/asìùhi D D l b b m 99D f6641 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 3 2 4 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in m m
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f6641
2SK324
f664
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