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    2SK38 Search Results

    2SK38 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3812-ZP-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 110A 2.8Mohm Mp-25Zp/To-263 Visit Renesas Electronics Corporation
    2SK3811-ZP-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 40V 110A 1.8Mohm Mp-25Zp/To-263 Visit Renesas Electronics Corporation
    2SK3814-Z-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 60A 8.7Mohm Mp-3Z/To-252 Visit Renesas Electronics Corporation
    2SK3812-ZP-E1-AY Renesas Electronics Corporation Nch Single Power Mosfet 60V 110A 2.8Mohm Mp-25Zp/To-263 Visit Renesas Electronics Corporation
    2SK3811(0)-ZP-E2-AZ Renesas Electronics Corporation Nch Single Power Mosfet 40V 110A 1.8Mohm Mp-25Zp/To-263 Visit Renesas Electronics Corporation
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    2SK38 Price and Stock

    Rochester Electronics LLC 2SK3850-TL-E

    NCH 10V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3850-TL-E Bulk 39,900 650
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.46
    • 10000 $0.46
    		Buy Now

    Renesas Electronics Corporation 2SK3814-Z-E1-AZ

    MP-3 AL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3814-Z-E1-AZ 4,000 1
    • 1 $2.47
    • 10 $2.049
    • 100 $1.6307
    • 1000 $1.17079
    • 10000 $1.11225
    		Buy Now
    Renesas Electronics America 2SK3814-Z-E1-AZ Strip 4,000 1
    • 1 $2.47
    • 10 $2.049
    • 100 $1.6307
    • 1000 $1.17079
    • 10000 $1.11225
    		Buy Now

    Rochester Electronics LLC 2SK3816-DL-1E

    MOSFET N-CH 60V 40A TO263-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3816-DL-1E Bulk 2,039 376
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    • 1000 $0.8
    • 10000 $0.8
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    Rochester Electronics LLC 2SK3818-DL-E

    N-CHANNEL SILICON MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3818-DL-E Bulk 2,000 683
    • 1 -
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    • 1000 $0.44
    • 10000 $0.44
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    Rochester Electronics LLC 2SK3815-E

    NCH 4V DRIVE SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3815-E Bulk 1,990 468
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    • 1000 $0.64
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    Find more 2SK38 price and stock on Findchips.com

    2SK38 Datasheets (209)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK38 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK38 Unknown FET Data Book Scan PDF
    2SK380 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK380 Unknown FET Data Book Scan PDF
    2SK3800 Sanken Electric Devices for Automotive Application Original PDF
    2SK3800VL Sanken Electric FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V TO-220S Original PDF
    2SK3800VR Sanken Electric FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V TO-220S Original PDF
    2SK3801 Sanken Electric FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V TO-3P Original PDF
    2SK3801 Sanken Electric Devices for Automotive Application Original PDF
    2SK3803 Sanken Electric Devices for Automotive Application Original PDF
    2SK381 Mitsubishi Scan PDF
    2SK381 Mitsubishi MOS FET Scan PDF
    2SK381 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK381 Unknown FET Data Book Scan PDF
    2SK381 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK3811 NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    2SK3811-ZP NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK3811-ZP-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V MP-25ZP/TO-263 Original PDF
    2SK3812 NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK3812-ZP NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    ...

    2SK38 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj


    Original     		PDF 2SK3857TV

    k3846

    Abstract: No abstract text available
    Text: 2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Applications  Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.)  High forward transfer admittance : |Yfs| = 33 S (typ.)


    Original     		PDF 2SK3846 k3846

    smd transistor ISS

    Abstract: 2SK3899 2SK38
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2


    Original     		PDF 2SK3899 O-263 smd transistor ISS 2SK3899 2SK38

    2SK3846

    Abstract: K3846
    Text: 2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.) z High forward transfer admittance : |Yfs| = 33 S (typ.)


    Original     		PDF 2SK3846 2SK3846 K3846

    k3869

    Abstract: 2SK3869 K386
    Text: 2SK3869 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3869 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.55 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)


    Original     		PDF 2SK3869 SC-67 2-10U1B 100us* k3869 2SK3869 K386

    2SK3847

    Abstract: No abstract text available
    Text: 2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOS III 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 12 mΩ (typ.) z High forward transfer admittance : |Yfs| = 36 S (typ.)


    Original     		PDF 2SK3847 2SK3847

    k3878

    Abstract: 2SK3878STA1 2sk3878
    Text: 2SK3878 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3878 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		PDF 2SK3878 k3878 2SK3878STA1 2sk3878

    k3843

    Abstract: 2SK3843 TC4090 32V16
    Text: 2SK3843 シリコンNチャネルMOS形 U-MOSⅢ 東芝電界効果トランジスタ 2SK3843 ○ スイッチングレギュレータ､DC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 120 S (標準)


    Original     		PDF 2SK3843 k3843 2SK3843 TC4090 32V16

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Product specification 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15


    Original     		PDF 2SK3814 O-252

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2


    Original     		PDF 2SK3899 O-263

    K3863

    Abstract: 2SK3863 2SK386 K386
    Text: 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)


    Original     		PDF 2SK3863 K3863 2SK3863 2SK386 K386

    k3828

    Abstract: 2SK3828 82452
    Text: 2SK3828 Ordering number : ENN8245 2SK3828 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.


    Original     		PDF 2SK3828 ENN8245 k3828 2SK3828 82452

    2sk3875

    Abstract: No abstract text available
    Text: 2SK3875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3875-01 2sk3875

    K3823

    Abstract: 2SK3823
    Text: 2SK3823 Ordering number : ENN8241 2SK3823 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


    Original     		PDF 2SK3823 ENN8241 K3823 2SK3823

    2SK389BL

    Abstract: No abstract text available
    Text: 2SK389BL Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		PDF 2SK389BL

    SJ 76 A DIODE

    Abstract: 2sk387201l
    Text: 2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3872-01L Symbol48V 100ms SJ 76 A DIODE 2sk387201l

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868 K386
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3868 k3868 2SK3868 transistor Toshiba K3868 K386

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type p -MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)


    Original     		PDF 2SK3868 k3868 2SK3868 transistor Toshiba K3868

    2SK388

    Abstract: 2sk38
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK388 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. zasMAX. 0a3±Q2 FEATURES: . Low Drain-Source ON Resistance : RDS(o n )=0 -2 ^ ( TyP•)


    OCR Scan     		PDF 2SK388 100nA 2SK388 2sk38

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    2SK386

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK386 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATION'S. Unit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. X- 20.5MAX. ^3.3±Q2 d— -1Tm


    OCR Scan     		PDF 2SK386 100nA 2SK386

    2SK381

    Abstract: X441
    Text: B i s s a i / * ? 2SK381 »SO S 2SK M 1Ü. iS * f - c . m w u * « / !.* * . » n T * « ¿ - f. t - Y i * . m a mm ) . t í W » « i L Í Í W N ^ - f + / v « Í K Ü « * Í j ) * ►•> > T + o r n 7 - f- m i L - c a j t w ¿ < í : I v f e l t t t l . B o * .w ,« n e 'a in - !:* # '> .


    OCR Scan     		PDF 2SK381 2SK381 X441

    2SK383

    Abstract: No abstract text available
    Text: 2SK383 y U 3 > N » * » ; U M 0 S FET S IL IC O N N -C H A N N E L M O S F ET * * * * * * < y * HIGH S P E E D 1. Y 2. — Y K ly -i “ y P O W ER S W IT C H IN G Gate D rain { y y ' y :J F lan g e ) 3 . V — X ! S o u rce (D im ensions in mm) (J E D E C T O -2 2 0 A B )


    OCR Scan     		PDF O-220AB) 2SK383 Tc-25

    2SK389

    Abstract: 2SJ109
    Text: TO SH IBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.


    OCR Scan     		PDF 2SK389 2SJ109 2SK389 2SJ109