400MIT Search Results

Contextual Info: DRAM PART NUMBERING HY 51 X XX XXX X XX XX - XX HYUNDAI SPEED Memory Products 45 45ns 50 50ns 60 60ns 70 70ns PRODUCT GROUP 51 : DRAM PACKAGE PROCESS & POWER SUPPLY BLANK : CMOS, 5.0V J 300mit SOJ V : CMOS, 3.3V JC 400mit SOJ T 300mil TSOP-II TC 400mil TSOP-il

31ZA8

Contextual Info: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-280A Z Rev. 1.0 Dec. 20, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.

1D03NS

Contextual Info: Y U H □ A I - • H Y 57 V 1 6 16 1 0 C 2 Banks X 512K x 16 Bit Synchronous ORAM DESCRIPTION THE Hyundai HY57V161610C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, HY57V161610C is organized as 2banks of

HM5118160AJ-6

Abstract: m5118160a HM5116160ATT-7
Contextual Info: HM5116160A Series HM5118160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-208C Z Rev. 3.0 Jul. 2, 1996 Description The Hitachi HM5116160A Series, HM5118160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance

Contextual Info: b lE D • b E H 'ìflS S TTS ■ M IT I MITSUBISHI LSIs M 5 M 4 4 9 0 0 A J ,L ,T P ,R T -6 ,- 7 , - 8 , - 1 0 MI T S U B I S H I M EM OR Y/ AS IC I FAST PAGE MODE 4 7 1 8 5 9 2 -B IT (5 2 4 2 8 8 -W 0 R D BY 9-B IT)D YN A M IC RAM DESCRIPTION • 2 8 pin S O J , 2 8 pin ZIP, 2 8 pin TSOP(II)

HY57V281620HCT-H

Contextual Info: HY57V281620HC L T 8Mx16-bit, 4K Ref, 4Banks., 3.3V DESCRIPTION T h e Hynix H Y 5 7 V 2 8 1 6 2 0 H C (L )T is a 1 3 4 ,2 1 7 ,7 2 8 b it C M O S Synchronous D R A M , ideally suited for the m ain m em o ry applications w hich require large m em o ry density a n d high bandw idth. H Y 5 7 V 2 8 1 6 2 0 H C (L )T is o rganized as 4 bank s o f 2 ,0 9 7 ,1 5 2 x 1 6

hy57v168010D

Abstract: IRRC
Contextual Info: -HYUNDAI - « H Y 5 7 V 1 6 8 0 1 0 D 2 Banks x 1 U X 8 Bit Synchronous DRAU DESCRIPTION Preliminary The Hyundai HY57V168010D is a 16, 7 7 7 ,216-bits CMOS Synchronous DRAM ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010D is organized as 2banks of

0117800T3-60

Contextual Info: IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2 M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)

BA0A11

Abstract: 39S64800T-80 39S648Q0T-10 SMD MARKING CODE aO9
Contextual Info: HYB39S6440X/8ÖX/16xT 64MBit Synchronous DRAM SIEM ENS 64 MBit Synchronous DRAM Advanced Information • High Performance: • Multiple Burst Read with Operation Single Write -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns • Data Mask for Read / Write control x4, x8

Contextual Info: HY57V28420A L T 32Mx4-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28420A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applica­ tions which require large memory density and high bandwidth. HY57V28420A is organized as 4banks of 8,388,608x4.

Contextual Info: KMM366S204CTL PC66 SDRAM MODULE KMM366S204CTL SDRAM DIMM 2Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung KMM366S2Q4CTL is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung