Untitled
Abstract: No abstract text available
Text: SEMiX453GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX453GB12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX303GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 466 A Tc = 80°C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 338 A Tc = 80°C 252 A 900 A -40 . 175 °C ICRM = 3xICnom VGES
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SEMiX303GB12T4s
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Untitled
Abstract: No abstract text available
Text: SKM400GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM400GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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SKM400GAL12T4
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Untitled
Abstract: No abstract text available
Text: SKiM306GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 410 A Ts = 70 °C 333 A 300 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM306GD12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
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SKiM306GD12E4
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Untitled
Abstract: No abstract text available
Text: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAL12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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SKM200GAL12E4
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Untitled
Abstract: No abstract text available
Text: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX302GAR12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX453GAL12E4s
E63532
Ap453GAL12E4s
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Untitled
Abstract: No abstract text available
Text: SEMiX404GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules SEMiX404GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX404GB12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A
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SKM600GA12E4
CA009
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AN37010A
Abstract: No abstract text available
Text: DATA SHEET Tentative Part No. AN37010A Package Code No. HSOP042-P-0400D Publication date: March 2011 Ver. EB 1 AN37010A Contents Overview …………………………………………………….……………………………………………………… 3
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AN37010A
HSOP042-P-0400D
AN37010A
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SEMiX453GAL12E4s
Abstract: No abstract text available
Text: SEMiX453GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX453GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX453GAL12E4s
SEMiX453GAL12E4s
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Untitled
Abstract: No abstract text available
Text: SKM150GB12VG Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 222 A Tc = 80 °C 169 A 150 A ICnom ICRM SEMITRANS 3 VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V 450 A -20 . 20
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SKM150GB12VG
SKM150GB12VG
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V
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SEMiX302GB12E4s
SEMiX302GB12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules SKM600GA12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V
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SKM600GA12T4
SKM600GA12T4
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SEMIX202GB12VS
Abstract: No abstract text available
Text: SEMiX202GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 310 A Tc = 80 °C 237 A 200 A ICnom ICRM SEMiX 2s VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 600 A -20 . 20 V 10
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SEMiX202GB12Vs
SEMiX202GB12Vs
E63532
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CS 5800
Abstract: No abstract text available
Text: SEMiX302GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 2s VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 900 A -20 . 20 V 10
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SEMiX302GB12Vs
SEMiX302GB12Vs
E63532
CS 5800
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SEMiX101GD12VS
Abstract: No abstract text available
Text: SEMiX101GD12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 159 A Tc = 80 °C 121 A 100 A ICnom ICRM SEMiX 13 VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 300 A -20 . 20 V 10
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SEMiX101GD12Vs
SEMiX101GD12Vs
E63532
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SEMIX151GD12v
Abstract: No abstract text available
Text: SEMiX151GD12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX 13 VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 450 A -20 . 20 V 10
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SEMiX151GD12Vs
SEMiX151GD12Vs
E63532
SEMIX151GD12v
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Untitled
Abstract: No abstract text available
Text: SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 81 A Tc = 80 °C 62 A 50 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 150 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SKM50GAL12T4
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Untitled
Abstract: No abstract text available
Text: SKM400GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440
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SKM400GAL12E4
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SKIM459GD12E4
Abstract: No abstract text available
Text: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 3xICnom tpsc Trench IGBT Modules VCC = 800 V VGE 15 V VCES 1200 V V 554 A 450 A 450 A 1350 A -20 . 20 V 10 µs -40 . 175
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SKiM459GD12E4
SKIM459GD12E4
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Untitled
Abstract: No abstract text available
Text: SEMiX404GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SEMiX404GB12E4s
E63532
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Untitled
Abstract: No abstract text available
Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SKM150GB12T4G
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Untitled
Abstract: No abstract text available
Text: SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 81 A Tc = 80 °C 62 A 50 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 150 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C
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SKM50GAL12T4
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