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    SKM150GB12T4G Price and Stock

    SEMIKRON SKM150GB12T4G

    Igbt Array & Module Transistor, Dual N Channel, 223 A, 1.85 V, 1.2 Kv, Module Rohs Compliant: Yes |Semikron SKM150GB12T4G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SKM150GB12T4G Bulk 46 1
    • 1 $225.9
    • 10 $201.05
    • 100 $201.05
    • 1000 $201.05
    • 10000 $201.05
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    Richardson RFPD SKM150GB12T4G 1
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    SEMIKRON SKM150GB12T4G 22892050

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 172A
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    TME SKM150GB12T4G 22892050 1
    • 1 $201.13
    • 10 $161.33
    • 100 $161.33
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    SEMIKRON SKM150GB12T4G-WITHOUT-SILICONE-GEL

    POWER IGBT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD SKM150GB12T4G-WITHOUT-SILICONE-GEL 1
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    SEMIKRON SKM150GB12T4GW

    POWER IGBT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD SKM150GB12T4GW 1
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    SKM150GB12T4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SKM150GB12T4G Semikron IGBT4 Modules Original PDF

    SKM150GB12T4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SKM150GB12T4G

    Untitled

    Abstract: No abstract text available
    Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM150GB12T4G VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V


    Original     		PDF SKM150GB12T4G

    SKM150GB12T4G

    Abstract: Diode semikron 103
    Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SKM150GB12T4G App2009 SKM150GB12T4G Diode semikron 103

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c