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    SEMIKRON SEMIX101GD12VS

    Igbt, Module, 1.2Kv, 159A; Dc Collector Current:159A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Junction Temperature, Tj Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage V(Br)Ceo:1.2Kv Rohs Compliant: Yes |Semikron SEMIX101GD12VS
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    Newark SEMIX101GD12VS Bulk 4
    • 1 $224.72
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    • 100 $187.26
    • 1000 $187.26
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    SEMiX101GD12VS

    Abstract: No abstract text available
    Text: SEMiX101GD12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 159 A Tc = 80 °C 121 A 100 A ICnom ICRM SEMiX 13 VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 300 A -20 . 20 V 10


    Original     		PDF SEMiX101GD12Vs SEMiX101GD12Vs E63532

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    Abstract: No abstract text available
    Text: SEMiX101GD12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 159 A Tc = 80 °C 121 A 100 A ICnom ICRM SEMiX 13 ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 121 A Tc = 80 °C 91


    Original     		PDF SEMiX101GD12Vs E63532