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    SEMIX302GB12E4S Price and Stock

    SEMIKRON SEMIX302GB12E4S

    Igbt Module, Dual, 1.2Kv, 463A; Continuous Collector Current:463A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX302GB12E4S
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    Newark SEMIX302GB12E4S Bulk 6
    • 1 -
    • 10 $151.98
    • 100 $138.95
    • 1000 $138.95
    • 10000 $138.95
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    Richardson RFPD SEMIX302GB12E4S 1
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    SEMIKRON SEMIX302GB12E4S 27890120

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX302GB12E4S 27890120 1
    • 1 $473.78
    • 10 $373.81
    • 100 $336.86
    • 1000 $336.86
    • 10000 $336.86
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    SEMIX302GB12E4S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		PDF SEMiX302GB12E4s SEMiX302GB12E4s E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C


    Original     		PDF SEMiX302GB12E4s E63532

    SEMiX302GB12E4s

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		PDF SEMiX302GB12E4s E63532 SEMiX302GB12E4s

    SEMiX302GB12E4s

    Abstract: SEMIX302GB12
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX302GB12E4s E63532 SEMiX302GB12E4s SEMIX302GB12

    K 250 diode

    Abstract: No abstract text available
    Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX302GB12E4s E63532 K 250 diode

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1