Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole
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bbS3T31
DD32EQ5
X3A-BFQ34
BFQ34T
BFQ34
OT172)
BFG35
OT223)
X3A-BFQ34
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Untitled
Abstract: No abstract text available
Text: N AHER PHILIPS/DISCRETE bbS3R31 DD32S7H 17fl *A P X b'lE D Philips Semiconductors Preliminary specification W ideband amplifier module OM2082/86 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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bbS3R31
DD32S7H
OM2082/86
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Untitled
Abstract: No abstract text available
Text: N AUER P H IL IP S /D IS C R E T E bTE D bb53R31 DD325T1 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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bb53R31
DD325T1
OM2083/86
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BGY60
Abstract: DIN45004B 386 amplifier philips vhf amplifier module BI 340
Text: bbSBTBl Philips Sem iconductors Hybrid VHF push-pull amplifier module DD32347 3ÖÖ N AMER PHILIPS / D I S C R E T E PIN CONFIGURATION • Extremely low noise 1 input pre-stage • Silicon nitride passivation 2 common • Rugged construction 3 common • TiPtAu metallized crystals ensure
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bb53T31
BGY60
-SOT115D
-60dB
DIN45004B;
BGY60
DIN45004B
386 amplifier
philips vhf amplifier module
BI 340
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BGD504
Abstract: BGD502 DIN45004B 550 mhz catv power doubler
Text: bbS3T31 Philips Semiconductors DD3231b 7Q4 CATV power doubler amplifier modules IAPX Product specification BGD502;BGD504 N AUER PH ILI PS/DISCRE TE PINNING -SO T 115C FE A T U R E S • Extremely low noise • Silicon nitride passivation • Rugged construction
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bbS3T31
D03231b
BGD502
BGD504
PINNING-SOT115C
BGD50ue;
DD3S31Ã
BGD504
DIN45004B;
DIN45004B
550 mhz catv power doubler
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TM-35
Abstract: BGD106 DIN45004B
Text: Philips Semiconductors bbS3^31 DD32312 DLT IAPX Product specification CATV power doubler amplifier module BGD106 N AMER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
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DD32312
BGD106
-SOT115C
MSB004
-60dB
DIN45004B;
TM-35
BGD106
DIN45004B
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Untitled
Abstract: No abstract text available
Text: bbS3R31 Philips Semiconductors DD32351 B OR M l APX Product specification CATV amplifier module — — BGY65 — N AflER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
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bbS3R31
DD32351
BGY65
-SOT115C
DIN45004B;
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BGY581
Abstract: BGY580 DIN45004B
Text: Philips Semiconductors • LtiS3T31 DD323Û1 54b CATV amplifier modules ■ APX IProductspecification BGY580;BGY581 N AP1ER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING-SOT115C • Excellent linearity • Extremely low noise DESCRIPTION PIN 1 input
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LLiS3T31
BGY580;
BGY581
BGY580
BGY581
PINNING-SOT115C
MSB00ductors
BGY580
DIN45004B
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Untitled
Abstract: No abstract text available
Text: bbSBTBl Philips Semiconductors DD32411 DD3 • APX Pfoductspecification CATV amplifier module BGY685A N AUER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation
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DD32411
BGY685A
OT115C
DIN45004B)
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Untitled
Abstract: No abstract text available
Text: P hilips Sem iconductors DD32512 T2D BB A P X Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology
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DD32512
OM2070B
MCD445
hbS3T31
DD3ES17
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Untitled
Abstract: No abstract text available
Text: bb53331 Philips Semiconductors DD32313 m 3 M l APX CATV amplifier module Product specification BGD506 — N AUER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation
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bb53331
DD32313
BGD506
PINNING-SOT115C
REF44
DIN45004B;
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICONt SECTOR MOE t M 43D2271 DD32M72 fl B H A S T- 7 5 - / / - Z . I ¡Jj H a r r i s C B C 2 D 2 2 1 2 1 1 2 C M O S 4 x 4 x 2 Crosspoint Switch With Control Memory A u g u s t 1991 Features D escription • L o w O N R e s is t a n c e . 7 5 V T y p . a t V d d = 1 2 V
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43D2271
DD32M72
M30E271
003247T
T--75--11--
CD22101,
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a hybrid wideband amplifier
Abstract: OM2052
Text: Philips Semiconductc bbS3=131 DD324BD STD I APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2052 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended
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OM2052
OM2052
a hybrid wideband amplifier
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE bbS3T31 DD325bb DTI H A P X D Philips Semiconductors Preliminary specification Wideband amplifier module OM2082/60 DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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bbS3T31
DD325bb
OM2082/60
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uhf vhf booster
Abstract: UCD445 philips if catv amplifier DD32512 OM2070B vHF amplifier DIAGRAM booster-amplifiers wideband 28 HF VHF power amplifier module
Text: Philips Semiconductors bbâ^^Bl DD32512 T SD H APX Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE ]> PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology
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DD32512
OM2070B
MCD444
hbS3T31
D03E517
uhf vhf booster
UCD445
philips if catv amplifier
OM2070B
vHF amplifier DIAGRAM
booster-amplifiers
wideband 28
HF VHF power amplifier module
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BGY85A
Abstract: BGY84A DIN45004B philips hybrid amplifier modules
Text: Philips Semiconductors bbSa'iBl DD323bb 23T IAPX Product specification BGY84A;BGY85A CATV amplifier modules N AMER PHILIPS/] ISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION ♦ Extremely low noise 1 input • Silicon nitride passivation
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DD323bb
-SOT115C
BGY84A
BGY85A
BGY84A
BGY85A
bb53T31
00323bfl
DIN45004B
philips hybrid amplifier modules
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BGE88
Abstract: philips hybrid amplifier modules
Text: Philips Sem iconductors DD3233b ST2 CATV amplifier module I APX Product specification BGE88;BGE88/01 N AMER PHILIPS/DISCRETE FEATURES PINNING -S O T 1 1 5 C PIN • Excellent linearity • Extremely low noise 1 PIN CONFIGURATION DESCRIPTION input • Silicon nitride passivation
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BGE88
BGE88/01
PINNING-SOT115C
-60dB
BGE88
philips hybrid amplifier modules
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cb pj 47 diode
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors
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bbS3T31
DD3227fl
LFE15600X
cb pj 47 diode
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philips om350
Abstract: OM350
Text: ^ 5 3 ^ 3 1 DD3243E fl3fl H A P X OM350 _ N AMER PHILIPS/DISCRETE bRE ]> HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for RATV and MATV applications.
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DD3243E
OM350
D032M37
philips om350
OM350
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AXP 188 ba
Abstract: 21071-DA 2mb1100 AXP 188 IC 5188b RSAD 5111 1M 21071-BA 82378IB 21071AA d327c
Text: m DECchip 21071-AA, 21072-AA Core Logic Data Sheet m A p ril 1994 21071-AA, 21072-A A Features: • Supports the entire fam ily of the DECchip 21064 Alpha AXP m icroprocessors • DECchip 21071-AA: 128-bit cache/64-bit memory • DECchip 21072-AA: 128-bit cache/128-bit
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21071-AA,
1072-A
128-bit
cache/64-bit
21072-AA:
cache/128-bit
32-bit
parity/32-bit
21072-AA
AXP 188 ba
21071-DA
2mb1100
AXP 188 IC
5188b
RSAD 5111 1M
21071-BA
82378IB
21071AA
d327c
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sequential timer working
Abstract: rom 512x4 0011B KS57-series
Text: KS57C0208 Cl CM ELECTRONICS Mi crocontroll er DESCRIPTION The KS57C0208 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, and 16 n-channel, open-drain I/O pins, the KS57C0208 offers an excellent design solution for a
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KS57C0208
KS57C0208
TCL01
24-SOP-375
32DLD
sequential timer working
rom 512x4
0011B
KS57-series
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82C54-2-P
Abstract: No abstract text available
Text: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes
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235b05
0G321ff
82C54
82C54
82C54-2
16-bit
82C54-2)
24-pin
P-DIP-24)
82C54-2-P
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Untitled
Abstract: No abstract text available
Text: ÔSaSbQS D D 3 2 m b 4?E ì> SIEMENS 4 • S IE G SIEMENS AKTIENGESELLSCHAF Token Bus Modem TBM SAB 82511 Advanced Information • • • • • Carrier-band modem fully compatible with IEEE 802.4 and MAP Standard 5 and 10 Mbit/s data rate using phase-coherent FSK modulation
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1N5148A
Abstract: 1N5139A MIL-STD-750 METHOD 2036 5961-N072 jantx 1n5139a
Text: 44E D MIL SPECS • G00Q125 D032flhb fi ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 93 • ! INCH-POUNO I 2 June MIL-S-19500/383A 2 March 1993 SUPERSEDING MIL-S-19500/383 14 January 1969
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G00Q125
D032flhb
MIL-S-19500/383A
MIL-S-19500/383
1N5139A
1N5148A
MIL-S-19500
5961-N072)
MIL-STD-750 METHOD 2036
5961-N072
jantx 1n5139a
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