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    3N0406

    Abstract: DD32 smd marking DD IPI80N04S3-06
    Text: Preliminary Data Sheet IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 5.8 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


    Original     		PDF IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N04S3-06 IPI80N04S3-06 3N0406 DD32 smd marking DD

    3N0406

    Abstract: IPP80N04S3-06 IPB80N04S3-06 IPI80N04S3-06 ANPS071E PG-TO263-3-2
    Text: IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 5.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0406 IPI80N04S3-06 3N0406 IPP80N04S3-06 IPB80N04S3-06 IPI80N04S3-06 ANPS071E PG-TO263-3-2