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    FDP8880 Search Results

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    FDP8880 Price and Stock

    Rochester Electronics LLC FDP8880

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FDP8880 Bulk 28,800 573
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    onsemi FDP8880

    MOSFET N-CH 30V 11A/54A TO220-3
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    DigiKey FDP8880 Tube
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    Avnet Americas FDP8880 Tube 4 Weeks 690
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    Bristol Electronics FDP8880 2,400
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    Quest Components FDP8880 1,920
    • 1 $1.6855
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    • 1000 $0.6742
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    Rochester Electronics FDP8880 1,396 1
    • 1 $0.5288
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    TME FDP8880 1
    • 1 $0.943
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    Flip Electronics FDP8880 200
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    Fairchild Semiconductor Corporation FDP8880

    Power Field-Effect Transistor, 11A, 30V, 0.0145ohm, N-Channel, MOSFET, TO-220AB
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    Rochester Electronics FDP8880 2,162 1
    • 1 $0.5288
    • 10 $0.5288
    • 100 $0.4971
    • 1000 $0.4495
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    FDP8880 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDP8880 Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF
    FDP8880 Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF
    FDP8880_NL Fairchild Semiconductor 30V N-Channel PowerTrench MOSFET Original PDF

    FDP8880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


    Original     		PDF FDP8880 FDB8880 FDB8880 O-263AB O-220AB

    FDP8880

    Abstract: FDB8880
    Text: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


    Original     		PDF FDP8880 FDB8880 O-263AB O-220AB 20asheet FDB8880

    FDB8880

    Abstract: FDP8880 ON semiconductor N51 68E-3 19E1 MOSFET S1A
    Text: May 2008 FDP8880 / FDB8880 N-Channel PowerTrench MOSFET tmM 30V, 54A, 11.6mΩ General Description Features r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A r DS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low r DS(ON) This N-Channel MOSFET has been designed specifically to


    Original     		PDF FDP8880 FDB8880 O-263AB O-220AB FDB8880 ON semiconductor N51 68E-3 19E1 MOSFET S1A

    Untitled

    Abstract: No abstract text available
    Text: May 2008 FDP8880 / FDB8880 N-Channel PowerTrench MOSFET tmM 30V, 54A, 11.6mΩ General Description Features r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A r DS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low r DS(ON) This N-Channel MOSFET has been designed specifically to


    Original     		PDF FDP8880 FDB8880 O-263ABnotice. FDB8880

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor