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    WT6401 Datasheets (1)

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    WT6401 Weitron P-Channel Enhancement Mode Power MOSFET Original PDF

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    RD10

    Abstract: WT6401
    Text: WT6401 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT -4.3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE -12 VOLTAGE 1 GATE 2 SOURCE Features: *Super High Dense Cell Design For Low RDS ON RDS(ON)<50mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *Fast Switching


    Original     		WT6401 OT-23 OT-23 06-May-05 RD10 WT6401 PDF

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    Abstract: No abstract text available
    Text: WT6401 P-Channel Enhancement Mode Power MOSFET * “G” Lead Pb -Free DRAIN CURRENT -4.3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE -12 VOLTAGE 1 GATE 2 SOURCE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<50mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement


    Original     		WT6401 OT-23 OT-23 06-May-05 PDF