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    3A 2SK30 Search Results

    3A 2SK30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3070L-E Renesas Electronics Corporation Nch Single Power Mosfet 40V 75A 5.8Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
    2SK3070STR-E Renesas Electronics Corporation Nch Single Power Mosfet 40V 75A 5.8Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK3054C-T1-AT Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3060-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3054-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation

    3A 2SK30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk2365

    Abstract: MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 2SK3058-ZJ PHB24N03LT 2SJ328
    Text: N & P CHANNEL HIGH POWER MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS FROM 3A TO 60A, AND POWER RATING UP TO 75W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 900V UP TO 100V N & P CHANNEL MOSFETS FUNCTIONAL EQUIVALENTS PART NO BUK464-200A BUK465-200A BUK466-200A


    Original     		PDF 2SK2983-ZJ 2SK2984-ZJ 2SK3056-ZJ 2SK2411-ZJ 2SK2513-ZJ 2SK2499-ZJ 2SK3058-ZJ 2SK3060-ZJ 2SK3062-ZJ 2SJ302-ZJ 2sk2365 MTB23P60E TO-263AB 2sk2134 2SJ series NEC 2sJ302 2SJ302 PHB24N03LT 2SJ328

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original     		PDF 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354

    Untitled

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Product specification 2SK3022 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15


    Original     		PDF 2SK3022 O-252

    2SK3022

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N-Channel Power F-MOSFET 2SK3022 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance 2.3 +0.1 0.60-0.1 3.80


    Original     		PDF 2SK3022 O-252 2SK3022

    2SK3022

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3022 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3022 2SK3022

    2SK3036

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm


    Original     		PDF 2SK3036 2SK3036

    2SK3029

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3029 2SK3029

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036

    2SK3029

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3029 2SK3029

    2SK3036

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036 2SK3036

    2SK3036

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm


    Original     		PDF 2SK3036 2SK3036

    2SK3022

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3022 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3022 2SK3022

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3029

    2SK3029

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3029 2SK3029

    2SK3029

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3029 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3029 2SK3029

    japan 8622

    Abstract: 2SK3093LS
    Text: 2SK3093LS Ordering number : EN8622 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3093LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.


    Original     		PDF 2SK3093LS EN8622 150described japan 8622 2SK3093LS

    japan 8622

    Abstract: 2SK3093LS
    Text: 2SK3093LS Ordering number : EN8622 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3093LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.


    Original     		PDF 2SK3093LS EN8622 PW10s, japan 8622 2SK3093LS

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036

    2SK3049

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay


    Original     		PDF 2SK3049 O-220D 2SK3049

    TA-3081

    Abstract: 2SK3092
    Text: Ordering number : ENN6788 2SK3092 N-Channel Silicon MOSFET 2SK3092 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [2SK3092] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source


    Original     		PDF ENN6788 2SK3092 2083B 2SK3092] 2092B TA-3081 2SK3092

    2SK3043

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original     		PDF 2SK3043 100mJ O-220D 2SK3043

    2SK3048

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay


    Original     		PDF 2SK3048 O-220D 2SK3048

    2SK3035

    Abstract: 2A DIODE
    Text: Power F-MOS FETs 2SK3035 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3035 2SK3035 2A DIODE

    2SK3049

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay


    Original     		PDF 2SK3049 O-220D 2SK3049