3A 100V NPN LOW SATURATION VOLTAGE Search Results

3A 100V NPN LOW SATURATION VOLTAGE Result Highlights (5)

Part	Manufacturer	Description
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

3A 100V NPN LOW SATURATION VOLTAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
U2TA508 Abstract: 1A 100V DIODE R-1 U2TA510 Text: POWER DARLINGTONS U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES DESCRIPTION • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 15V max. @ lc = 3A • Economic Plastic Molded Construction Unitrode NPN Dariingtons consist of a	OCR Scan	U2TA506 U2TA508 U2TA510 10MHz U2TA506, U2TA510, 1A 100V DIODE R-1 U2TA510	PDF
ZXTN25100DG Abstract: ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG Text: ZXTN25100DG 100V NPN high gain transistor in SOT223 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m⍀ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor	Original	ZXTN25100DG OT223 100mV ZXTP19100CG OT223 D-81541 ZXTN25100DG ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG	PDF
Untitled Abstract: No abstract text available Text: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V  Case: SOT363  IC = 1A high Continuous Collector Current   ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.	Original	DSS8110Y OT363 J-STD-020 200mV DSS9110Y) MIL-STD-202, DS31679	PDF
U2TA510 Abstract: Unitrode Semiconductor U2TA506 Text: MICROSEMI CORP/ ÜIATERTOÜIN SDE D c13M7cï b 3 0D1E507 POWER DARLINGTONS- IUNIT U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 1.5V max. @ lc = 3A • Economic Plastic Molded Construction	OCR Scan	13M7cï 0D1E507 U2TA506 U2TA508 U2TA510 U2TA51C 10MHz 300/is; U2TA506, U2TA510 Unitrode Semiconductor	PDF
D1724 Abstract: 2SB1167 2S017 Text: Ordering number: EN2047A 2SB1167/2SD1724 PNP/NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High fT . Excellent linearity of hi	OCR Scan	EN2047A 2SB1167/2SD1724 00V/3A 2SB1167 20VM/4 D1724 2SB1167 2S017	PDF
2SB1167 Abstract: No abstract text available Text: Ordering number:2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2043A Features [2SB1167/2SD1724] · Low collector-to-emitter saturation voltage.	Original	2SB1167/2SD1724 00V/3A 2SB1167/2SD1724] 2SB1167 O-126LP 2SB1167	PDF
Untitled Abstract: No abstract text available Text: O rdering num ber: EN2047A 2SB1167/2SD1724 NO.2047A PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/3A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High f\j.	OCR Scan	EN2047A 2SB1167/2SD1724 00V/3A 2SB1167 1167/2S	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated Green FZT653 100V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •              BVCEO > 100V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A	Original	FZT653 OT223 300mV FZT753 AEC-Q101 J-STD-020 DS33150	PDF
DARLINGTON 3A 100V npn Abstract: 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601	Original	2SB601 VCC50V 2SD560 DARLINGTON 3A 100V npn 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor	PDF
2SC2908 Abstract: 3A 100V npn LOW SATURATION VOLTAGE Text: SavantIC Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Low collector saturation voltage APPLICATIONS ·For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1	Original	2SC2908 2SC2908 3A 100V npn LOW SATURATION VOLTAGE	PDF
NPN Transistor 8A Abstract: DARLINGTON 3A 50V npn TIP102 Darlington transistor DARLINGTON 3A 100V npn npn transistor 100v min high current darlington transistor power darlington npn transistor Silicon NPN Darlington transistor TIP102 TIP107 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A	Original	TIP107 TIP102 NPN Transistor 8A DARLINGTON 3A 50V npn TIP102 Darlington transistor DARLINGTON 3A 100V npn npn transistor 100v min high current darlington transistor power darlington npn transistor Silicon NPN Darlington transistor TIP102 TIP107	PDF
2SC2908 Abstract: 3A 100V npn LOW SATURATION VOLTAGE Text: Inchange Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PN package ・Low collector saturation voltage APPLICATIONS ・For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION	Original	2SC2908 2SC2908 3A 100V npn LOW SATURATION VOLTAGE	PDF
2sc2516 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SC2516 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers	Original	2SC2516 O-220C 2sc2516	PDF
2SC2517 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers	Original	2SC2517 O-220C 2SC2517	PDF

3A 100V npn LOW SATURATION VOLTAGE Abstract: 2SC2517 Text: Inchange Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers	Original	2SC2517 O-220C 3A 100V npn LOW SATURATION VOLTAGE 2SC2517	PDF
2sc2516 Abstract: 3A 100V npn LOW SATURATION VOLTAGE Text: Inchange Semiconductor Product Specification 2SC2516 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers	Original	2SC2516 O-220C 2sc2516 3A 100V npn LOW SATURATION VOLTAGE	PDF
TS 4142 Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142 Text: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage	OCR Scan	0075T4 T-33- KSD288 TS 4142 LC04A KSD73 100V transistor npn 5a ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142	PDF
je180 Abstract: MJE181 MJE170 MJE172 MJE180 MJE182 MJE200 MJE210 Text: SAMSUNG SEMICONDUCTOR INC MJE172 D \| 7^4145 0007^3 4 \| PNP EPITAXIAL SILICON TRANSISTOR T -3 3-1 7 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage j CoHector-Emitter Voltage	OCR Scan	MJE172 -65M50 O-126 MJE170 MJE200 je180 MJE181 MJE180 MJE182 MJE210	PDF
2SD2241 Abstract: 2SB1481 rl10c Text: SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain : hFE=2000 Min ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications	Original	2SD2241 O-220F 2SB1481 VCCA30V 2SD2241 2SB1481 rl10c	PDF
2SC3170 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SC3170 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High breakdown voltge APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1	Original	2SC3170 O-220Fa 2SC3170	PDF
2SC3170 Abstract: No abstract text available Text: JMnic Product Specification 2SC3170 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High breakdown voltge APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector	Original	2SC3170 O-220Fa 2SC3170	PDF
2SC2739 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SC2739 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1	Original	2SC2739 O-220C 2SC2739	PDF
2SC2739 Abstract: 2a 100v NPN ic 3A hfe 500 Text: Inchange Semiconductor Product Specification 2SC2739 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION	Original	2SC2739 O-220C 2SC2739 2a 100v NPN ic 3A hfe 500	PDF
2SC4596 Abstract: 2SC4596 equivalent Text: SavantIC Semiconductor Product Specification 2SC4596 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For high speed power switching and DC-DC converter applications	Original	2SC4596 O-220Fa O-220Fa) VCCA30V 2SC4596 2SC4596 equivalent	PDF

3A 100V NPN LOW SATURATION VOLTAGE Search Results

3A 100V NPN LOW SATURATION VOLTAGE Result Highlights (5)

3A 100V NPN LOW SATURATION VOLTAGE Datasheets Context Search

U2TA508

ZXTN25100DG

Untitled

U2TA510

D1724

2SB1167

Untitled

Untitled

DARLINGTON 3A 100V npn

2SC2908

NPN Transistor 8A

2SC2908

2sc2516

2SC2517

3A 100V npn LOW SATURATION VOLTAGE

2sc2516

TS 4142

je180

2SD2241

2SC3170

2SC3170

2SC2739

2SC2739

2SC4596