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    ZXTN25 Price and Stock

    Diodes Incorporated ZXTN25060BZTA

    TRANS NPN 60V 5A SOT89-3
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    DigiKey ZXTN25060BZTA Cut Tape 83,459 1
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    ZXTN25060BZTA Digi-Reel 83,459 1
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    Avnet Americas ZXTN25060BZTA Reel 1,000 8 Weeks 1,000
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    Mouser Electronics ZXTN25060BZTA 25,003
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    Newark ZXTN25060BZTA Cut Tape 839 1
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    Bristol Electronics ZXTN25060BZTA 290
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    Quest Components ZXTN25060BZTA 232
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    Diodes Incorporated ZXTN25100DGTA

    TRANS NPN 100V 3A SOT223-3
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    DigiKey ZXTN25100DGTA Cut Tape 57,580 1
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    ZXTN25100DGTA Digi-Reel 57,580 1
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    Mouser Electronics ZXTN25100DGTA 16,508
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    Newark ZXTN25100DGTA Cut Tape 1,599 1
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    RS ZXTN25100DGTA Bulk 20
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    Bristol Electronics ZXTN25100DGTA 760 11
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    Quest Components ZXTN25100DGTA 608
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    ZXTN25100DGTA 83
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    New Advantage Corporation ZXTN25100DGTA 1,000 1
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    Diodes Incorporated ZXTN25020DFLTA

    TRANS NPN 20V 2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZXTN25020DFLTA Reel 3,000 3,000
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    Mouser Electronics ZXTN25020DFLTA 15,934
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    Avnet Silica ZXTN25020DFLTA 3,000 10 Weeks 3,000
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    Diodes Incorporated ZXTN25015DFHTA

    TRANS NPN 15V 5A SOT23-3
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    DigiKey ZXTN25015DFHTA Cut Tape 3,000 1
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    ZXTN25015DFHTA Digi-Reel 3,000 1
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    ZXTN25015DFHTA Reel 3,000 3,000
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    Avnet Americas ZXTN25015DFHTA Reel 26 Weeks 3,000
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    Avnet Silica ZXTN25015DFHTA 3,000 28 Weeks 3,000
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    Diodes Incorporated ZXTN25020BFHTA

    TRANS NPN 20V 4.5A SOT23-3
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    DigiKey ZXTN25020BFHTA Cut Tape 2,821 1
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    ZXTN25020BFHTA Digi-Reel 1
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    Avnet Americas ZXTN25020BFHTA Reel 26 Weeks 3,000
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    Mouser Electronics ZXTN25020BFHTA 3,783
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    Avnet Silica ZXTN25020BFHTA 3,000 28 Weeks 3,000
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    Find more ZXTN25 price and stock on Findchips.com

    ZXTN25 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXTN25012EFH Diodes NPN medium power transistor Original PDF
    ZXTN25012EFH Zetex Semiconductors 12V, SOT23, NPN medium power transistor Original PDF
    ZXTN25012EFHTA Zetex Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 12V 6A MED PWR SOT23-3 Original PDF
    ZXTN25012EFL Diodes NPN low power transistor Original PDF
    ZXTN25012EFL Zetex Semiconductors 12V, SOT23, NPN low power transistor Original PDF
    ZXTN25012EFLTA Zetex Semiconductors 12V, SOT23, NPN low power transistor Original PDF
    ZXTN25012EZ Diodes 12V NPN high gain transistor in SOT89 Original PDF
    ZXTN25012EZTA Zetex Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN HI GAIN 12V SOT89 Original PDF
    ZXTN25015DFH Zetex Semiconductors 15V, NPN medium power transistor Original PDF
    ZXTN25015DFHTA Zetex Semiconductors 15V, NPN medium power transistor Original PDF
    ZXTN25020BFH Zetex Semiconductors 20V, SOT23, NPN medium power transistor Original PDF
    ZXTN25020BFHTA Zetex Semiconductors 20V, SOT23, NPN medium power transistor Original PDF
    ZXTN25020CFH Zetex Semiconductors 20V, SOT23, NPN medium power transistor Original PDF
    ZXTN25020CFHTA Zetex Semiconductors 20V, SOT23, NPN medium power transistor Original PDF
    ZXTN25020DFH Zetex Semiconductors 20V SOT23 NPN medium power transistor Original PDF
    ZXTN25020DFHTA Zetex Semiconductors 20V SOT23 NPN medium power transistor Original PDF
    ZXTN25020DFL Diodes NPN low power transistor Original PDF
    ZXTN25020DFL Zetex Semiconductors 20V, SOT23, NPN low power transistor Original PDF
    ZXTN25020DFLTA Zetex Semiconductors 20V, SOT23, NPN low power transistor Original PDF
    ZXTN25020DG Diodes 20V NPN high gain transistor in SOT223 Original PDF

    ZXTN25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TS16949

    Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
    Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ

    TS16949

    Abstract: ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL
    Text: ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		PDF ZXTN25040DFL 350mW ZXTP25040DFL D-81541 TS16949 ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL

    ZXTN25012EFH

    Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 ZXTN25012EFH ZXTP25012EFH TS16949 ZXTP25012EFHTA

    ZXTN25060BZTA

    Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
    Text: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZXTN25060BZ D-81541 ZXTN25060BZTA TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7

    zxtp25020cfh

    Abstract: No abstract text available
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541 zxtp25020cfh

    ZETEX medium power complementary transistors

    Abstract: 65 marking sot23 ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25040DFH -85mV ZXTN25040DFH ZETEX medium power complementary transistors 65 marking sot23 ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA

    ZXTN25040DFH

    Abstract: ZXTP25040DFH ZXTP25040DFHTA Marking 024
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25040DFH -85mV ZXTN25040DFH ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA Marking 024

    ZXTP25040DFHTA

    Abstract: No abstract text available
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25040DFH -85mV ZXTN25040DFH ZXTP25040DFHTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		PDF ZXTN25050DFH

    TS16949

    Abstract: ZXTN25100DZ ZXTP25100CZ ZXTP25100CZTA
    Text: ZXTP25100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 1A VCE(sat) < -225mV @ 1A RCE(sat) = 155m⍀ PD = 2.4W Complementary part number ZXTN25100DZ Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25100CZ -100V -225mV ZXTN25100DZ D-81541 TS16949 ZXTN25100DZ ZXTP25100CZ ZXTP25100CZTA

    ZXTN25020DG

    Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
    Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25020DG OT223 ZXTP25020DG OT223 D-81541 ZXTN25020DG TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25

    ZXTN25040DFH

    Abstract: ZXTN25040DFHTA ZXTP25040DFH
    Text: ZXTN25040DFH 40V, SOT23, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 4A VCE(sat) < 55 mV @ 1A RCE(sat) = 35 m⍀ PD = 1.25W Complementary part number ZXTP25040DFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTN25040DFH ZXTP25040DFH ZXTN25040DFH ZXTN25040DFHTA ZXTP25040DFH

    zxtn25050dfhta

    Abstract: No abstract text available
    Text: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		PDF ZXTN25050DFH zxtn25050dfhta

    ZXTN25012EFH

    Abstract: No abstract text available
    Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		PDF ZXTN25012EFH

    ZXTN25012EFH

    Abstract: No abstract text available
    Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		PDF ZXTN25012EFH ZXTN25012EFH

    1.5A 130V power mosfet

    Abstract: TS16949 ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL
    Text: ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		PDF ZXTN25040DFL 350mW ZXTP25040DFL D-81541 1.5A 130V power mosfet TS16949 ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL

    ZXTP25020CFH

    Abstract: TS16949 ZXTN25020CFH ZXTP25020CFHTA
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541 ZXTP25020CFH TS16949 ZXTN25020CFH ZXTP25020CFHTA

    TS16949

    Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
    Text: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25060BFH -100V, -85mV ZXTN25060BFH D-81541 TS16949 ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA

    ZXTP25 20V 6A

    Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
    Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


    Original     		PDF ZXTP25020DG OT223 -65mV ZXTN25020DG OT223 ZXTP25020DGTA D-81541 ZXTP25 20V 6A ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA

    ZXTN25020BFH

    Abstract: ZXTP25020BFH ZXTP25020BFHTA RBC-10K
    Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25020BFH -60mV ZXTN25020BFH ZXTN25020BFH ZXTP25020BFH ZXTP25020BFHTA RBC-10K

    TS16949

    Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 TS16949 ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA

    marking 1a1

    Abstract: No abstract text available
    Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 65mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		PDF ZXTN25020DFL 350mW ZXTP25020DFL ZXTN25020DFLTA marking 1a1

    1.5A 130V power mosfet

    Abstract: No abstract text available
    Text: ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 1.5A VCE(sat) < 80mV @ 1A RCE(sat) = 56 m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		PDF ZXTN25040DFL 350mW ZXTP25040DFL ZXTN25040DFLTA 1.5A 130V power mosfet

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP


    Original     		PDF ZXTP25020DZ -65mV ZXTN25020DZ D-81541