Untitled
Abstract: No abstract text available
Text: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm
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3D30blD
DDD01DS
C30817
C30817
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VTE5880
Abstract: No abstract text available
Text: 5bE D • 3D30bDT Daoigsa 431 M V C T GaAIAs Infrared Emitting Diodes VTE5880 T-1 3/4 5 mm Plastic Package — 880 nm T - 4 I - 15 VACTEC _ PACKAGE DIMENSIONS inch (mm) ■OSO (1 2 7 ) .0 3 0 (0 7 $ ) 1 0 0 ( 2 5 .4 ) MINIMUM ' .3 4 ( 8 .6 ) .1 7 ( 4 .3 )
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VTE5880
VTE5880
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PDF
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Corning 7052
Abstract: 7052 glass DT-25 DT-110
Text: E G & G JUDSON 5 7E D • 3D30b0S GGOQnS b ■ DT Series Features • • • • Planar Diffused Oxide Passivated Guard Ring Construction Wide Spectral Range • • • • Low Noise Large Area Fast Rise Time Wide Dynamic Range Operating Data and Specifications at 23°C: Typical Performance at 100 V Bias
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3D30b0S
DT-25
DT-110
DT-25
Corning 7052
7052 glass
DT-110
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PDF
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VTB5051
Abstract: 3500/04 B5050 VTB5050
Text: SbE 3D30bCH D G00104Q VTB Process Photodiodes E G 75*1 - - 4 ISI I VCT V T B 5 0 5 0 , 5051 & G VACTEC PACKAGE DIMENSIONS inch mm CASE 14 PRODUCT DESCRIPTION TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a “flat" window, dual lead TO-5 package.
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3D30bCH
00104Q
VTB5050,
B5050
VTB5051
VTB5051
3500/04
B5050
VTB5050
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PDF
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rca 036
Abstract: C30957E photodiode demodulation
Text: £ I G t & G/CANADA/OPTOELEK c / 3D30bl0 OOGGISS SbM H C A N A ID Photodiode C30957E DATA SHEET Optics l T - W n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm
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3030bl0
C30957E
C30957E
ED-0032/10/88
rca 036
photodiode demodulation
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PDF
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VT83B
Abstract: VT-83B
Text: PACKAGE DIMENSIONS inch mm 1.38(35.051 .070 (1,78) • 3D30bG'i .216(5.49) 4 «VCT 0Q007EE VT800 Series LIGHT DEPENDENT RESISTOR 33E D LEAD DIA. £ PLASTIC COATINQ NOT CONTROLLED WITHIN .10 (2.5) OF CERAMIC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE
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3D30bG
0Q007EE
VT800
VT83C173
VT83F902
VT83C
VT83F302
VT83B
VT84A901
VT841L
VT83B
VT-83B
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PDF
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ELLS 110
Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
Text: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module
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3D30bl0
00D0141
C30919E
0-27SI
ELLS 110
avalanche photodiode bias
avalanche photodiode
preamplifier voltage
C30919E
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PDF
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C30642E
Abstract: rca 514 C30618 C30619 C30641 C30642 T018 el 85
Text: E G & G/CANADA/OPTOELEK ^ V n l l fl i f J f 1 I ID ]> • E le c tr o O p tic s 'T ^ £/ / 'S 3 3D30bl0 OODDDTD DÔ6 ■ CANA Photodiodes C30618, C30619, C30641, C30642 ¥ -
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C30618,
C30619,
C30641,
C30642
ED-0020/03/88
C30642E
rca 514
C30618
C30619
C30641
C30642
T018
el 85
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PDF
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31AA
Abstract: CLD31 VTD32 VTD32AA
Text: SbE D 3D30b0^ □□01120 am • VCT VTD32, VTD32AA VTP Process Photodiodes C L D 3 1 . 3 1 AA L A R G E CH I P I N D U S T R Y EQUIV. E 8. G G VACTEC T-41-51 PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .033 in2 (21.2 mm2)
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3D30b0^
VTD32,
VTD32AA
CLD31.
T-41-51
VTD32
VTD32M
1001c,
31AA
CLD31
VTD32
VTD32AA
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PDF
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light dependent resistor,
Abstract: light dependent resistor Scans-002683 VT70A302 vt700 Light-Dependent Resistor VT701 VT702L VT704 VT70A144
Text: LIGHT DEPENDENT RESISTOR QQQQ724 i MVCT f T-<41-41 V T 7 0 0 S e r ie s PACKAGE DIM ENSIO N S inch mm .300 (7.62) .070( 1.78) 1.38 (35.05) 3D30b£H AW0 24 TINNED COPPER LEADS • 255 (6.48) 275 (6.99) LEAD DIA. t RUSTIC COATINQ NOT CONTROLLED WITHIN .10 (2.5)
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VT700
VT72A482
VT721H
VT72A262
VT721
VT73A103
VT732
VT74A901
VT741
VT74A451
light dependent resistor,
light dependent resistor
Scans-002683
VT70A302
Light-Dependent Resistor
VT701
VT702L
VT704
VT70A144
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PDF
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HgCdTe
Abstract: J15TE4 J15TE3 preamp MC31G HGCDTE detector judson PA-090 EG&G PA-080 judson PA-100
Text: E G & G JUDSON 3T E J15TE Series T> m 3D30b0S 0000237 7 M JUD Long-Wave Mercury Cadmium Telluride Detectors 10.6 |Lim T-yj-v/ General • J15TE Series "Long-Wave" detectors are photoconductive HgCdTe elements on thermoelectric coolers for C 0 2 laser detection at 10.6|am.
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3D30b0S
J15TE
100Hz
20MHz)
J15TE3
J15TE4
MC31G:
MC31S:
HgCdTe
preamp
MC31G
HGCDTE detector
judson PA-090
EG&G
PA-080
judson PA-100
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PDF
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31AA
Abstract: CLD31 VTD32 VTD32AA
Text: 5bE D 3D30b0^ GOOllSD AMI B V C T VTD32, V T D 3 2 A A VTP Process Photodiodes C L D 3 1 . 3 1 A A L A R G E C H I P I N D U S T R Y EQUIV. E G & G VACTEC T-41-5 1 PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .033 in2 (21.2 mm2)
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3Q30b
VTD32,
VTD32AA
CLD31.
T-41-51
VTD32
1001c,
31AA
CLD31
VTD32
VTD32AA
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PDF
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VTP4050
Abstract: VTP4050S
Text: 5bE D • 3D30b[H 0001073 ITS H V C T V T P 4 0 5 0 , 40 50S VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm V ' :- PRODUCT DESCRIPTION .0 6 7 ( 1.7 0 ) .3 0 5 ( 7 . 7 5 ) CASE 13 Planar silicon photodiode mounted on a two lead ceramic substrate and
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3D30b
VTP4050,
4050S
T-41-51
VTP4050
VTP4050S
1001c,
5x1012
x1012
VTP4050
VTP4050S
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PDF
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250BG
Abstract: No abstract text available
Text: E G & 6/CANADA/0PT0ELEK 47E 3D30blü I> 0QD030f l 4 • CANA UV Series -V /-5 1 Features • • • • Planar Diffused Structure Oxide Passivated Wide Spectral Range Flat Noise Spectrum to DC • Linearity Over Wide Dynamic Range Peak Responsivity: 0.62 A /W at 900 Nanometers
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3D30blÃ
0QD030f
UV-040BG
UV-040BQ
UV-100BG
UV-100BQ
UV-215BG
UV-215BQ
UV-250BG
UV-250BQ
250BG
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quadrant photodiode rca
Abstract: No abstract text available
Text: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .
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303Dbl0
GDQ0143
C30927E
C30927E-03
C30927E-02
C30927E-01
VP-104
C30927E-01,
C30927E-02,
C30927E-03
quadrant photodiode rca
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PDF
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VTP6060
Abstract: No abstract text available
Text: VTP Process Photodiodes VTP6060 P A C K A G E D IM E N SIO N S inch mm P R O D U C T D ESC R IP T IO N CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack age. Cathode is common to the case.
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VTP6060
100fc,
IO-13
VTP6060
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PDF
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vactrol
Abstract: vactec vactrol vtl1a3 VTL1A3 vactec vactrol vtl1b5 Photoresistor neon lamp 220 volt VTL1A4 VTL186 lem HA
Text: ¡3 “ is Material FI HERMETIC SEALED VACTROL 2° C l VACTEC Copyrighted VACTEC P i Bulletin VTL-1 By Its Respective M A X IM U M RATINGS lOOmW — derate 2mW/’ C above 25°C case temperature — 55*C to -f- 70“C operating and storage Case temperature 4
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PDF
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flashtubes
Abstract: photodiodes
Text: VTS VTS Process Photodiodes P R O D U C T DESCRIPTION P A C K A G E DIM ENSIONS 86 inch mm These planar, P on N, large area silicon photodiodes are characterized for use in the photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity
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3D30bCH
0001b02
flashtubes
photodiodes
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PDF
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Untitled
Abstract: No abstract text available
Text: VTP8440 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 21 Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTP8440
1001c,
3D30bm
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PDF
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Untitled
Abstract: No abstract text available
Text: VTP1112 VTP Process Photodiodes C ASE 19 PRODUCT DESCRIPTION T O -4 6 LENS ED HERM ETIC „, CHIP A C TIV E A R E A : .0025 ¡ i f 1.6 m m2l Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under
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VTP1112
3D30bCH
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PDF
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SIECOR Fiber Optic cable
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK ^ M7E D • 3ü3DblG OGDOE^ EGzG OPTOELECTRONICS h ■ CANA C86075E& C86082E Series - n v / ' O i C86082E Series C86075E Series The EG&G series of 1300 nm LEDs are edge emitting InGaAsP
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C86075E&
C86082E
C86075E
ED-0050/12/90
SIECOR Fiber Optic cable
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PDF
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C30817
Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —
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3030bl0
C30954E,
C30955E,
C30956E
C30954E
C30955E
Range--40Â
C30817
s915
C30872
C30955E
tic 1060
C30956E
s914
C30916E
92LS-S916
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PDF
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IC 7405
Abstract: UV diode 200 nm UV-100BG uv photodiode, GaP SALEM UV diode 250 nm UV-100 V1402 140BQ dual photodiode
Text: UV Series: 3030hG5 QGODlbS E7E D E G & G JU DSON Multi-Element Features • • • • ô Cross Talk < 1% Between Elements Linearity Over Wide Dynamic Range Flat Noise Spectrum to DC Oxide Passivated Structure Peak Responsivity: 0.62 A /W at 900 Nanometers
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3030hG5
UV-100BG
UV-100BQ
UV-140BQ-2
UV-140BQ-4
UV-140-2
UV-140-4
UV-140-2
UV-140-4
IC 7405
UV diode 200 nm
uv photodiode, GaP
SALEM
UV diode 250 nm
UV-100
V1402
140BQ
dual photodiode
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PDF
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25CC
Abstract: VTL11D1 VTL11D3 VTL11D5-20 VTL11D6-20 VTL11D7
Text: Transmissive Optoswitch VTL11D1 - D7 Slotted Switch — .395 High PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches combines an infrared em itting diode IRED w ith an NPN phototransistor in a one piece, sealed, IR transm itting plastic case.
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VTL11D1
VTL13
260-C
VTL11D
VTL11D7-20
0DD15H5
25CC
VTL11D3
VTL11D5-20
VTL11D6-20
VTL11D7
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PDF
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