C30817E
Abstract: datasheet apd 1550
Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,
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C30659
12-lead
C30817EH,
C30902EH,
C30954EH,
C30956EH,
C30645EH
C30662EH,
C30950
C30817E
datasheet apd 1550
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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diode d1n914
Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30817com.
diode d1n914
d1n914 DIODE
d1n914
C30817E
C30659-1550-R2A
InGaas PIN photodiode, 1550 NEP
C30950
Silicon and InGaAs APD Preamplifier Modules
C30954E
avalanche photodiode 1550nm sensitivity
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C30902S
Abstract: C30817E C30817 C30955EH
Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager
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C30902EH,
C30921EH
C30902SH,
C30921SH
C30902S
C30817E
C30817
C30955EH
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C30817E
Abstract: C30955EH
Text: PhotodiodeSForhiGh-PerFormAnceAPPlicAtionS Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Productdescription hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and
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C30902
C30902EH,
C30921EH
C30902SH,
C30921SH
C30817E
C30955EH
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C30817E
Abstract: No abstract text available
Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP
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C30659
C30659-900-1060-1550nm
1100nm
1700nm
12-lead
C30om.
C30817E
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C30817
Abstract: No abstract text available
Text: Modules and optical Receivers PIN AND APD Si PIN and APD Modules, InGaAs APD Modules Receiver Modules For Analytical AND Industrial Applications Si PIN and APD Modules – InGaAs APD Modules Applications • Laser range finder Product Description These modules comprise of a photodetector PIN or APD and a transimpedance amplifier in the
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C30659
C30659-1550-R2AH
C30645
C30919E
C30817
C30950EH
LLAM-1550-R2AH
C30662
LLAM-1060-R8BH
C30817
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APD 1550 nm photodetector
Abstract: C30950EH HUV-1100
Text: ModuleSandopticalreceiverS PIN AND APD Si PIN and APD Modules, InGaAs APD Modules RECEIVER MODULES FOR ANALYTICAL AND INDUSTRIAL APPLICATIONS Si PIN and APD Modules – InGaAs APD Modules applications • Laser range inder productdescription
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C30659
C30659-1550-R08BH
C30645
C30659-1550-R2AH
C30919E
C30817
C30950EH
LLAM-1550-R2AH
APD 1550 nm photodetector
C30950EH
HUV-1100
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C30817E
Abstract: SILICON APD Pre-Amplifier
Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.
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C30659
900/1060/1550/1550E
-1550E
C30817EH,
C30902EH,
C30954EH
C30956EH
C30645EH
C30662EH
C30817E
SILICON APD Pre-Amplifier
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Untitled
Abstract: No abstract text available
Text: E 6 & 6/CANADA/OP TOELEK R C /1 3D30blD DDD01DS 33T « C A N A 10 T - V /- Photodiode C30817 DATA SH EET Optics Silicon Avalan che Photodiode for G e n eral-Purp ose Applications • High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm
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3D30blD
DDD01DS
C30817
C30817
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C30817
Abstract: RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4
Text: E 6 & 6/CANADA/OPTOELEK 10 » yy- r 3D30fc>10 ÜÜ001D5 33^ B K A N A WM flTB ÆM Electro Photodiode C30817 DATA SHEET • mw#loptics Silicon Avalanche Photodiode for General-Purpose Applications ■ High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm
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3D30fc
001Q5
C30817
Range--40Â
C30817
ED-0030/10/88
RCA C30817
LXA 102 103
PTS 400
C3081
QQG0107
921S-4
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Untitled
Abstract: No abstract text available
Text: G & G/CANADA/OPTOELEK WM • IQ 3D3DL1D 0G000M4 1TÔ io l «CANA Solid State Detectors ~ MW Electro Optics and Devices Developmental Types C30950 Seríes Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic
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0G000M4
C30950
6x10s
9x10s
9x104
C30950E,
C30950F,
C30950G
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C30817
Abstract: C30954E ISO-9001-87 C30872 C30916E c30954 C30956E C30956 c30955e avalanche photodiodes
Text: J L ,E G slG CANADA LTD. Optoelectronics Divisio Formerly i t C A Effective January 1,1991 ISO-9001-87 Cert *001975 Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications
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ISO-9001-87
C30954E,
C30955E,
C30956E
C30954E
C30955E
C30956E
C30817
ISO-9001-87
C30872
C30916E
c30954
C30956
c30955e
avalanche photodiodes
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C30817
Abstract: photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL
Text: C A INC/ ELECTRO OPTICS IDE D I 74A4L.75 000D04M 4 | ItCil */|- Solid State Detectors ~ Electro Optics and Devices Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic
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74fl4b75
000D044
C30950
6x10s
9x10s
9x104
6084V1
C30817
photodiode preamplifier
C30950E
RCA C30817
preamplifier voltage
RCA Solid State
avalanche photodiodes
C30950 equivalent
C30902E
C30950EL
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C30950E
Abstract: C30817 C30950EL photodiode preamplifier C30950 avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State
Text: E G & G/CANADA/OPTOELEK 10 D • Electro Optics and Devices _ 7 “^- *//•' iol 303DL1D 0000044 ITfl ■ CANA R G il Solid State Detectors Developmental Types C30950 Series € Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules
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303DL1D
C30950
6x10s
9x10s
C30950E
C30817
C30950EL
photodiode preamplifier
avalanche photodiode bias
avalanche photodiodes
C30902E
emitter "1060 nm"
RCA Solid State
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Untitled
Abstract: No abstract text available
Text: £ G & G/CANADA/OPTOELEK I t C J I sfj ID D Electro Optics m 3030bl0 D O G G I E bbO ICANA Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —
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3030bl0
C30954E,
C30955E,
C30956E
C30956E
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C30902E
Abstract: C30904E avalanche photodiodes C30817 C30905E C30908E C30916E
Text: R C A INC/ ELECTRO OPTICS 10E D • 7484k7S DDDD133 3 | r- Vi-íi C30904E. C30905E. C30908E Silicon Avalanche Photodiodes Developmental Types Silicon Avalanche Photodiodes With Integral Light Pipes — Desigred Especially for Optical Communication Systems
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74fl4b75
DDDD133
C30904E,
C30905E,
C30908E
C30902E
C30904E
avalanche photodiodes
C30817
C30905E
C30916E
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C30950E
Abstract: C30950EL C30950 equivalent C30817 30950G RCA Solid State C30950 C30902 C30902E
Text: ELECTRO OPTICS R C IDE D /1 m Electro O ptics and Devices 3Û741S4 □□OODMM 1 m GEEO _ T ' - H l - io ~ J Solid State Detectors Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic
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741S4
C30950
6x10s
9x10s
9x104
C30950E
C30950EL
C30950 equivalent
C30817
30950G
RCA Solid State
C30902
C30902E
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