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    VTP6060 Search Results

    VTP6060 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VTP6060 PerkinElmer Optoelectronics VTP Process Photodiode Original PDF
    VTP6060 EG&G FAST RESPONSE HIGH DARK RESISTANCE - Silicon Diodes Scan PDF
    VTP6060 EG&G Vactec VTP Process Photodiodes Scan PDF
    VTP6060 EG&G Vactec VTP Process Photodiodes Scan PDF

    VTP6060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VTP6060H

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP6060H PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low


    Original     		PDF VTP6060H VTP6060H

    Untitled

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP6060 PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low


    Original     		PDF VTP6060

    VTP6060

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP6060 PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low


    Original     		PDF VTP6060 VTP6060

    VTP6060

    Abstract: K350
    Text: VTP Process Photodiodes VTP6060 PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low


    Original     		PDF VTP6060 VTP6060 K350

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTP8651

    Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
    Text: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).


    Original     		PDF VTP100 VTP8651 VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100

    VTP6060

    Abstract: No abstract text available
    Text: VTP Process Photodiodes VTP6060 P A C K A G E D IM E N SIO N S inch mm P R O D U C T D ESC R IP T IO N CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack­ age. Cathode is common to the case.


    OCR Scan     		PDF VTP6060 100fc, IO-13 VTP6060

    Untitled

    Abstract: No abstract text available
    Text: VTP6060 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE IS Large area planar silicon photodiode in a "flat” window, dual lead TO-8 pack­ age. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of


    OCR Scan     		PDF VTP6060

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    VTP6061

    Abstract: Photodiodes 6061 vactec VTP6060
    Text: SbE D • BOBDbD^ DGD1D77 640 H V C T V T P 6 0 6 0 , 6061 VTP Process Photodiodes E C i G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) a 'flat' w indow , dual lead T O -8 pack­


    OCR Scan     		PDF DGD1D77 VTP6060, T-41-51 VTP6061 Photodiodes 6061 vactec VTP6060

    Photodiodes 6061 vactec

    Abstract: VTP6060 VTP6061 9x10-14 Photodiode vactec
    Text: SbE D I VCT BGBObDT DDD1D77 64D V T P 6 0 6 0 , 6061 VTP Process Photodiodes E G 8. G VACTEC T -4 1 -5 1 P AC K AG E DIMENSIONS inch mm PRO D UCT DESCRIPTION CASE 15 TO-8 HERMETIC Large area planar silicon photodiode in CHIP ACTIVE AREA: .032 in2 (20.6 mm2)


    OCR Scan     		PDF DDD1D77 VTP6060, T-41-51 VTP6060 VTP6061 3x1012 x1012 Photodiodes 6061 vactec VTP6060 VTP6061 9x10-14 Photodiode vactec