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    350NS Search Results

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    MD27C64-35 Rochester Electronics LLC UVPROM, 8KX8, 350ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
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    Advantech Co Ltd MIO-5350N-S2A2

    SBC 1.1GHZ 4 CORE 8GB/0GB RAM
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    Advantech Co Ltd MIO-5350N-S1A2

    SBC 2.4GHZ 2 CORE 8GB/0GB RAM
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    Advantech Co Ltd MIO-5350N-S2A1E

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    TE Connectivity ACW0219-0.35-0(NS)

    Cable 1Conductor 0.35mm2 Bare Copper Black 50V (Alt: 3985903001)
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    350NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs


    Original
    PDF PYA28C256 350ns 28-Pin 32-Pin 450x550 PYA28C256 32Kx8 64-byte EEPROM104

    CAT28LV65

    Abstract: PARALLEL E2PROM
    Text: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:


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    PDF CAT28LV65 64K-Bit 250/300/350ns CAT28L 28LV65 8mmx13 500/Reel 250ns 300ns 350ns CAT28LV65 PARALLEL E2PROM

    CAT28LV64

    Abstract: 28LV64 28LV64-25
    Text: Preliminary CAT28LV64 Preliminary CAT28LV64 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6 V Supply ■ Commercial and Industrial Temperature Ranges ■ Read Access Times: ■ CMOS and TTL Compatible I/O – 250/300/350ns ■ Automatic Page Write Operation:


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    PDF CAT28LV64 64K-Bit 250/300/350ns CAT28LV64 300-T 28LV64 28LV64-25

    B2716

    Abstract: m2716 FDIP24W M271616
    Text: M2716 16 Kbit 2Kb x 8 NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350nsM2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE


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    PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns AI00784B B2716 FDIP24W M271616

    Untitled

    Abstract: No abstract text available
    Text: PYA28C256 32K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply CMOS & TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: - 10,000 Write Cycles - 100,000 Write Cycles optional


    Original
    PDF PYA28C256 350ns 28-Pin 32-Pin 450x550 PYA28C256 32Kx8 64-byte EEPROM104

    PYA28C16

    Abstract: eeprom
    Text: PYA28C16 2K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write 200µs or 1 ms Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)


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    PDF PYA28C16 350ns 24-Pin 32-Pin 450x550 PYA28C16 EEPROM108 eeprom

    PYA28C64

    Abstract: eeprom
    Text: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs


    Original
    PDF PYA28C64 350ns PYA28C64X 28-Pin 32-Pin 450x550 eeprom

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input


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    PDF 2500Vrms BM6103FV-C BM6103FV-C 2500Vrms, 350ns, 180ns,

    12KV

    Abstract: 2PF140 motorola 350NS
    Text: RECTIFIER, 12kV, 225mA, 350ns January 7, 1998 1997 SEMTECH CORP. 2PF140 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, 12kV, 225mA, 350ns 2PF140 January 7, 1998 © 1997 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320


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    PDF 225mA, 350ns 2PF140 12KV 2PF140 motorola 350NS

    1N914

    Abstract: FDIP24W M2716
    Text: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350nsM2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM


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    PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W 1N914 FDIP24W

    PYA28C256

    Abstract: No abstract text available
    Text: PYA28C256 32K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Software Data Protection Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times CMOS & TTL Compatible Inputs and Outputs


    Original
    PDF PYA28C256 350ns 28-Pin 32-Pin 450x550 PYA28C256 32Kx8 64-byte EEPROM104

    B2716

    Abstract: FDIP24W M2716 m2716 dip M2716* eprom
    Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350nsM2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM


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    PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns B2716 FDIP24W m2716 dip M2716* eprom

    2SK1258

    Abstract: SC-65
    Text: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDb on : RDS (on) l = 0 . 0 2 i l (typ.) • High sw itching ra te : t( = 350ns (typ.) • No secondary breakdow n Unit: mm 25.5max.


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    PDF 2SK1258 350ns 2SK1258 SC-65

    CAT28LV65

    Abstract: No abstract text available
    Text: P relim inary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:


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    PDF CAT28LV65 64K-Bit 250/300/350ns 11b2b15 24-40-LEAD CAT28LV65

    CAT28LV65

    Abstract: No abstract text available
    Text: Preliminary CAT28LV65 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation: - Active: 8 mA Max.


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    PDF CAT28LV65 64K-Bit 250/300/350ns CAT28LV65 28LV65 28LV65I

    nec 2716 eprom

    Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
    Text: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply


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    PDF uPD2364 iPD2364 -450ns35PC 2364-30PC 450nsec 350nsec 300nsec nec 2716 eprom 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764

    XL2804A-250

    Abstract: XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06
    Text: EXEL - XL2804A MICROELECTRONICS, INC. . 512 X 8 Electrically Erasable P R O M PIN CONFIGURATION FEATURES • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 24 Pin PDIP Type "P" Package J ■ 5 Volt-only Operation


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    PDF 250ns, 300ns, 350ns, 450ns 100pF) 100pF XL2804A XL2804A-250 XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06

    1A31A

    Abstract: C804B V/HC-804
    Text: BURR-BROliJN CORP HE D I B U R R -B R O W N * 173]i3bS [1014547 5 I SHC803BM, CM SHC804BM, CM [ Ultra-High Speed SAM PLE/H O LD AMPLIFIER FEATU RES D E S C R IP T IO N • 350nsec max ACQUISITION TIM E The SHC803 and SHC804 are high speed sample/ hold amplifiers designed for use in fast 12-bit data


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    PDF SHC803BM, SHC804BM, 350nsec 150nsec SHC803) 24-PIN SHC803 SHC804 12-bit 1A31A C804B V/HC-804

    m2716a

    Abstract: No abstract text available
    Text: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED


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    PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W m2716a

    2364

    Abstract: A12CE SMM2364C pf051 SMM2364
    Text: PF051-05 SMM2364C CMOS 64K-BIT MASK ROM •L o w Supply Current •A ccess Time 350ns/450ns #8,192 Words X 8 Bits Asynchronous • DESCRIPTION The SMM2364C is an 8,192 words X 8 bits asynchronous, static, mask programmable ROM on a monolithic CMOS chip and is characterized by fast access time and very low power dissipation. The nature "static”


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    PDF PF051-05 SMM2364C 64K-BIT 350ns/450ns 2364C 24-pin 2364 A12CE pf051 SMM2364

    ADC1130

    Abstract: ADC1131 HI508A HTS-0010 SHA1144 analog devices "902-2"
    Text: Very High Speed ADSHM-5 2nd Source-Replaces All SHM-5 Series Fast 350ns Acquisition Time to ±0.01% Aperture Uncertainty 250ps ADSHM-5K Ultra Fast 250ns Acquisition Time to ±0.01% 100ns Acquisition Time to ±0.1% Wide 12MHz Bandwidth 300V|is Slew Rate Super Low 2nA Input Bias Current


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    PDF 350ns 250ps 250ns 100ns 12MHz HTS-0010 14-Bit SHA1144 SHAU44 SHA1144. ADC1130 ADC1131 HI508A HTS-0010 SHA1144 analog devices "902-2"

    Untitled

    Abstract: No abstract text available
    Text: XL2865A 8K X 8 Electrically Erasable PROM PIN CONFIGURATION FEATURES 28 Pin PDIP Type "P" Package • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns , ■ 5 Volt-only Operation ■ Industrial Temperature Range Available XLE2865A ■ Fast Nonvolatile Write Cycle


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    PDF XL2865A 250ns, 300ns, 350ns, 450ns XLE2865A) 200ns XL2865A

    2864A

    Abstract: No abstract text available
    Text: eXe L MICROELECTRONICS noC A A XLZO O H A M k n l.f' 8K X 8 Electrically Erasable PROM FE A TU R ES • Fast Read A ccess Tim es — 250ns, 300ns, 350ns, 450ns ■ 5 V o lt-o nly O peratio n Including W rite ■ ■ ■ Industrial T em p e ra tu re R ange A vailab le


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    PDF 250ns, 300ns, 350ns, 450ns 200ns XL2864A XL2864A 2864A

    SM2716

    Abstract: No abstract text available
    Text: Æ T S C S -T H O M S O N M2716 M W & i( O T K !]D ( g S NMOS 16K (2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED


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    PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns SM2716