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    12KV Search Results

    12KV Result Highlights (5)

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    SN65HVD71DGKR Texas Instruments 3.3V, Full-Duplex RS-485, 12kV IEC ESD, 400kbps data rate, No Enables 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    SN65HVD73DGS Texas Instruments 3.3V, Full-Duplex RS-485, 12kV IEC ESD, 20Mbps data rate, w/Enables 10-VSSOP -40 to 125 Visit Texas Instruments Buy
    SN65HVD71DGK Texas Instruments 3.3V, Full-Duplex RS-485, 12kV IEC ESD, 400kbps data rate, No Enables 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    SN65HVD74DGKR Texas Instruments 3.3V, Full-Duplex RS-485, 12kV IEC ESD, 20Mbps data rate, No Enables 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    SN65HVD76DGSR Texas Instruments 3.3V, Full-Duplex RS-485, 12kV IEC ESD, 50Mbps data rate, w/Enables 10-VSSOP -40 to 125 Visit Texas Instruments Buy
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    FLIP ELECTRONICS CY7C1512KV18-250BZI

    IC SRAM 72MBIT PAR 165FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1512KV18-250BZI Bulk 2,422 5
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    • 100 $123.8
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    FLIP ELECTRONICS CY7C1312KV18-250BZXI

    IC SRAM 18MBIT PARALLEL 165FBGA
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    DigiKey CY7C1312KV18-250BZXI Tray 2,004 20
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    FLIP ELECTRONICS CY7C1412KV18-333BZC

    IC SRAM 36MBIT PARALLEL 165FBGA
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    DigiKey CY7C1412KV18-333BZC Tray 1,100 20
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    FLIP ELECTRONICS CY7C1612KV18-250BZXC

    IC SRAM 144MBIT PAR 165FBGA
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    DigiKey CY7C1612KV18-250BZXC Tray 886 5
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    Rochester Electronics LLC CY7C1312KV18-333BZC

    IC SRAM 18MBIT PARALLEL 165FBGA
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    DigiKey CY7C1312KV18-333BZC Bulk 461 9
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    12KV Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ESJA09 10kV,12kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.


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    ESJA09 12kV/5mA) ESJA09 ESJA09-10 ESJA09-12 PDF

    ESJA09-12

    Abstract: high voltage CRT transformer ESJA09 ESJA09-10 10KV DIODE
    Text: ESJA09 10kV,12kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.


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    ESJA09 12kV/5mA) ESJA09 ESJA09-10 ESJA09-12 100pcs. ESJA09-12 high voltage CRT transformer ESJA09-10 10KV DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: PJE5UQFN10A LOW CAPACITANCE TVS DIODE ARRAY FEATURES • IEC61000-4-2 ESD +17kV Air, +12kV Contact compliance • Low capacitance=0.4 pF maximum. • Protect four I/O lines • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . Halogen Free


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    PJE5UQFN10A IEC61000-4-2 2011/65/EU IEC61249 DFN2510-10L, MIL-STD-750, 2014-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: COMPANY CONFIDENTIAL PI3LVD400 3.3V, 4-Differential Channel High-speed Switch with Integrated DDC Switch/Level Shifter Features Description • High-speed path can switch differential signals such as TMDS or LVDS • VDD = 3.3V ±10% • ESD tolerance on video I/O pins is up to 12kV HBM


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    PI3LVD400 -73dB 15-ohm, PI3LVD400 56-Pin 56-contact, PD-2024 PI3LVD400ZFE PDF

    Untitled

    Abstract: No abstract text available
    Text: PI3LVD412 3.3V, 4-differential channel LVDS switch targeted for 18bit displays Features Description • Designed specifically to switch LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 870MHz typ • Low Xtalk, (-28dB typ)


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    PI3LVD412 18bit 870MHz -28dB PI3LVD412 PS8978B 42-Pin 42-contact PDF

    HIGH VOLTAGE DIODE 12kv

    Abstract: flyback transformer FBT 18 crt flyback transformer high voltage CRT transformer 1-2kv flyback transformer FBT 90 12KV fbt 110 12KV 2ma high voltage diode 100 kv
    Text: ESJA09-12 12kV/5mA Outline Drawings : mm HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.5 Features 10 27 min.


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    ESJA09-12 12kV/5mA) ESJA09 HIGH VOLTAGE DIODE 12kv flyback transformer FBT 18 crt flyback transformer high voltage CRT transformer 1-2kv flyback transformer FBT 90 12KV fbt 110 12KV 2ma high voltage diode 100 kv PDF

    HIN238

    Abstract: 485-RS-232 Transceivers TO-5 ICL3207E ICL3217E ICL3221E ICL3222E ICL3223E RS-232 to i2c ISL3281E
    Text: 9 Interface ICs 2008 P RODUCT S ELECTION GUIDE Interface ICs pg. 9-1 Multi-Protocol (pg. 9-33) RS-485/RS-422 (pg. 9-4) SMBus Accelerator (SMA) (pg. 9-35) RS-232 and RS-485 (pg. 9-33) ESD Protected, 5V (pg. 9-3) IEC61000 15kV ESD (pg. 9-4) HBM 12kV to 15kV ESD


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    RS-232 RS-485/RS-422 RS-232 RS-485 250kbps, 40Mbps 100Mbps 15Mbps pRS-485 RS-485, HIN238 485-RS-232 Transceivers TO-5 ICL3207E ICL3217E ICL3221E ICL3222E ICL3223E RS-232 to i2c ISL3281E PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA HC12 12kV 0.8A HIGH VOLTAGE DIODES Outline Drawings : mm HC-SERIES HIGH VOLTAGE RECTIFIER BLOCKS WITH 0.81 x 6.35 Tab Terminals Typ. MOUNTING SLOTS. 19.0 Features 6.35 Rectifier Blocks 76.2 50.8 High Voltage 9.4 Typ. Mounting 19.0 Slots 12.7 3.95 Applications


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA ESJC13-12 350mA 12kV HIGH VOLTAGE DIODES Outline Drawings : mm Finds use in applications such as Monitors, Static electricity dust collectors,Laser power supplies,ect. Cathode Mark Lot No. o 7.0 o 1.28 Features High speed switching High Current 20 min.


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    ESJC13-12 350mA ESJC13 PDF

    ESJC11-09

    Abstract: lg magnetron esjc
    Text: E S J C 1 1 9kV, 12kV : O utline D raw ings HIGH VOLTAGE SILICON DIODE E S JC 1 1 (i, E S J C 1 1 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.


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    ESJC11-09 ESJC11-12 Maximu8-7681 19H24^ I95t/R lg magnetron esjc PDF

    Untitled

    Abstract: No abstract text available
    Text: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ


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    PI3LVD1012 10-differential 24bit -55dB 80-pin PI3LVD1012 MO-154C/BC 80-Pin, 150-Mil PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA 2CL104 12kV 350mA HIGH VOLTAGE DIODE Outline Drawings : mm 2CL104 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features


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    2CL104 350mA 2CL104 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVCA 2CL106 12kV 450mA HIGH VOLTAGE DIODE Outline Drawings : mm 2CL106 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features


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    2CL106 450mA 2CL106 PDF

    til 710

    Abstract: No abstract text available
    Text: FAST RECOVERY, 100ns. HIGH VOLTAGE MINIATURE RECTIFIERS SMALL SIZE MOLDED PACKAGE 12,000 VOLT PRV AVALANCHE CHARACTERISTICS LOW LEAKAGE 36 PEAK REVERSE VOLTAGE 12KV AVERAGE FORWARD CURRENT 6mA SEE FIG 1 PEAK SURGE CURRENT (1/2 CYCLE) 300mA MAXIMUM FORWARD VOLTAGE DROP (@6mA)


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    100ns. 300mA 1-BOO-67B-OQS8 til 710 PDF

    marking code vishay

    Abstract: PEF 220
    Text: PEF 220, FPE 210 Vishay Draloric Plate Capacitors with Moisture Protection Plate Capacitors for Higher Voltages PEF 220 12KVPTO 20KVP FPE 21030KVP Moisture protection Silicone rubber 1000pF: 73 ± 2 (2.874 ± 0.08) 1500pF: 56 ± 1 (2.205 ± 0.04) 7000pF to 10000pF


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    12KVPTO 20KVP 21030KVP 1000pF: 1500pF: 7000pF 10000pF 18-Jul-08 marking code vishay PEF 220 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILIC O N HIGH VO LT A G E R EC T IFY IN G DIODES MD-12N H 10 • i a SflE J> m ORIGIN ELECTRIC CO LT» • Ît f i: I . • 12kV è < 7 ' < =7 L X ^ 2 . •E û t i (H ^ -ry ) . < n m m „ 2. C02U-• Æ fê (T a = 2 5 t ) C h a ra c te ristic s(T a = 2 5 °C ,


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    37MAX' PDF

    TAA 691

    Abstract: 0R6JXZ33A 0R6LXZ33A 0R6QXZ33A 0R6UXZ33A TOSHIBA RECTIFIER
    Text: 909725 0 - TOSHIB A 3 e] <DI SCRETE / O P T O D E ^ g ^ g S D 0R6QXZ33A 0005553 3 I 39C 02253 0 <f ' ^ 3 ' ô > 3 " HIGH-VOLTAGE RECTIFIER Unit 12kV 0 .6 A i n DIB M A X IM U M RATINGS SYMBOL CH A R A C TER ISTIC 0R6JXZ33A Repetitive Peak 0R6LXZ33A V rrm .


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    0R6QXZ33A 0R6JXZ33A 0R6LXZ33A 0R6JXZ33A 600mA, 0R6LXZ33A TAA 691 0R6QXZ33A 0R6UXZ33A TOSHIBA RECTIFIER PDF

    CFZ12-CFZ200

    Abstract: FZ100-300 cfz12 FZ200
    Text: HIGH VOLTAGE CARBON RESISTORS 1/8 WATT to 3 WATT RESISTORS MCAPS & COILS MDELAY LINES CFZ SERIES H H H H H Type CFZ was developed as a low-cost alternative to high voltage thick film and carbon composition resistors. Carbonized film processing enables pulse capabilities to 12KV! Elements


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    Mil-R-39008 CFZ25 FA022A CFZ12-CFZ200 FZ100-300 cfz12 FZ200 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVGT 2CL2H 12kV 100mA HIGH VOLTAGE DIODE Outline Drawings : mm 2CL2H is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features


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    100mA DO-415 100mA PDF

    12KV

    Abstract: 2PF140 motorola 350NS
    Text: RECTIFIER, 12kV, 225mA, 350ns January 7, 1998 1997 SEMTECH CORP. 2PF140 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, 12kV, 225mA, 350ns 2PF140 January 7, 1998 © 1997 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320


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    225mA, 350ns 2PF140 12KV 2PF140 motorola 350NS PDF

    Untitled

    Abstract: No abstract text available
    Text: HVGT HVRT120 12kV 30mA HIGH VOLTAGE DIODES Outline Drawings : mm HVRT150 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features


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    HVRT120 HVRT150 DO-310 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVGT ESJC50F12 450mA 12kV HIGH VOLTAGE DIODES Outline Drawings : mm Finds use in applications such as Monitors, Static electricity dust collectors,Laser power supplies,ect. Cathode Mark Lot No. o 7.0 o 1.28 Features High speed switching High Current 24 min.


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    ESJC50F12 450mA DO-721 PDF

    2CL73

    Abstract: No abstract text available
    Text: HVGT 2CL73 5mA 12kV HIGH VOLTAGE DIODES Outline Drawings : mm 2CL73 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features


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    2CL73 2CL73 DO-310 PDF

    Untitled

    Abstract: No abstract text available
    Text: HVGT ESJC13-12 350mA 12kV HIGH VOLTAGE DIODES Outline Drawings : mm Finds use in applications such as Monitors, Static electricity dust collectors,Laser power supplies,ect. Cathode Mark Lot No. o 7.0 o 1.28 Features High speed switching High Current 20 min.


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    ESJC13-12 350mA DO-721 ESJC13 PDF