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    8MMX13 Price and Stock

    JAE Electronics MX84B028PF1

    Automotive Connectors Connector Pin Housing 28POS
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    TTI MX84B028PF1 Each 2,400 300
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    Schaffner RN202-2-02-1M1

    Common Mode Chokes / Filters 2A 1.1mH 70mOhm Vertical Choke
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    TTI RN202-2-02-1M1 Box 500 500
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    Carling Technologies LRA-70956000

    Rocker Switches 1-pole, OFF - None - ON, 10A 30VDC not HP rated, Illuminated Clear Red Rocker Switch with .250 Tab (Q.C.)
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    TTI LRA-70956000 Each 300 2
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    • 10 $3.79
    • 100 $3.21
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    Carling Technologies RSCA201-VB-B-0-V

    Rocker Switches SWITCH ROCKER
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    TTI RSCA201-VB-B-0-V Each 300 2
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    • 100 $2.28
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    Pulse Electronics Corporation PA2248.153NLT

    Power Inductors - SMD 15 uH 22 A 20 % Shielded DCR=7.5 mOhms
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    TTI PA2248.153NLT Reel 800
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    8MMX13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BS62LV2006

    Abstract: BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32
    Text: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : VCC = 3.0V Operation current : 23mA Max. at 55ns


    Original     		PDF BS62LV2006 6/20uA R0201-BS62LV2006 BS62LV2006 BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32

    BS62UV256

    Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
    Text: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns


    Original     		PDF BS62UV256 150ns 100ns BS62UV25rature R0201-BS62UV256 BS62UV256 BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI

    Untitled

    Abstract: No abstract text available
    Text: RMLV0408E Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0206EJ0100 Rev.1.00 2014.2.27 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher


    Original     		PDF RMLV0408E 512-kword R10DS0206EJ0100 288-word 32-pin

    Untitled

    Abstract: No abstract text available
    Text: ESMT M53D128168A 2E Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS)


    Original     		PDF M53D128168A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.


    Original     		PDF M53D128168A

    TSOP32 pad

    Abstract: bs62lv1027 R0201-BS62LV1027
    Text: Very Low Power CMOS SRAM 128K X 8 bit BS62LV1027 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 18mA Max. at 55ns


    Original     		PDF BS62LV1027 BS62LVontinued) R0201-BS62LV1027 TSOP32 pad bs62lv1027 R0201-BS62LV1027

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1023 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current


    Original     		PDF BS62LV1023 BS62LV1023SC BS62LV1023TC BS62LV1023STC BS62LV1023PC BS62LV1023JC BS62LV1023DC BS62LV1023SI BS62LV1023TI BS62LV1023STI

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 32K X 8 bit BS62LV2565 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current


    Original     		PDF BS62LV2565 BS62LV2565 volt315 R0201-BS62LV2565

    CAT28LV65

    Abstract: PARALLEL E2PROM
    Text: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:


    Original     		PDF CAT28LV65 64K-Bit 250/300/350ns CAT28L 28LV65 8mmx13 500/Reel 250ns 300ns 350ns CAT28LV65 PARALLEL E2PROM

    BS62LV2565

    Abstract: BS62LV2565DC BS62LV2565JC BS62LV2565JI BS62LV2565PC BS62LV2565PI BS62LV2565SC BS62LV2565SI BS62LV2565TC BS62LV2565TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 32K X 8 bit BS62LV2565 „ DESCRIPTION „ FEATURES • Wide Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current


    Original     		PDF BS62LV2565 BS62LV2565 to004 R0201-BS62LV2565 BS62LV2565DC BS62LV2565JC BS62LV2565JI BS62LV2565PC BS62LV2565PI BS62LV2565SC BS62LV2565SI BS62LV2565TC BS62LV2565TI

    CAT28C65B

    Abstract: No abstract text available
    Text: CAT28C65B 64K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: ■ Commercial, Industrial and Automotive – 120/150ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: – Active: 25 mA Max. – Standby: 100 µA Max.


    Original     		PDF CAT28C65B 64K-Bit 120/150ns CAT28C65B 28C65B 500/Reel 8mmx13 120ns 150ns 28C65B

    LY621024PL-70LL

    Abstract: LY621024PL
    Text:  LY621024 128K X 8 BIT LOW POWER CMOS SRAM Rev. 1.8 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Description Issue Date Initial Issue Jul.25.2004 Revised sym. b of 32 pin 450mil SOP package outline dimension Jan.17.2007


    Original     		PDF LY621024 450mil LY621024GL-70LLE LY621024GL-70LLET LY621024GL-70LLI LY621024GL-70LLIT LY621024PL-70LL LY621024PL

    Untitled

    Abstract: No abstract text available
    Text: W988D6FB / W988D2FB 256Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential


    Original     		PDF W988D6FB W988D2FB 256Mb 166MHz. A01-004

    Untitled

    Abstract: No abstract text available
    Text: EM48AM3284LBB Revision History Revision 0.1 May. 2010 First release. Revision 0.2 (Sep. 2010) Delete CL=2 parameters Input Leakage Current = -2 A ~ +2 A Change Supply Voltage Rating = -0.5 ~ +2.3 Delete Deep Power Down Mode Change AC timing paramters: tRC & tIS


    Original     		PDF EM48AM3284LBB 512Mb 133MHz 166MHz 90Ball-FBGA

    BS62LV1023

    Abstract: BS62LV1023DC BS62LV1023JC BS62LV1023PC BS62LV1023SC BS62LV1023SI BS62LV1023STC BS62LV1023STI BS62LV1023TC BS62LV1023TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION „ FEATURES • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current


    Original     		PDF BS62LV1023 -40oC R0201-BS62LV1023 BS62LV1023 BS62LV1023DC BS62LV1023JC BS62LV1023PC BS62LV1023SC BS62LV1023SI BS62LV1023STC BS62LV1023STI BS62LV1023TC BS62LV1023TI

    Untitled

    Abstract: No abstract text available
    Text: R1LV5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV5256E Series has realized


    Original     		PDF R1LV5256E 256Kb R10DS0068EJ0100 256-Kbit 768-word 28-pin

    CAT28C64B

    Abstract: 1N914 28C64B 28C64B-12 28C64B-15 28C64B-90 CAT28C64BNI-15T 1805F
    Text: H EE GEN FR ALO CAT28C64B 64K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max.


    Original     		PDF CAT28C64B 64K-Bit 90/120/150ns CAT28C CAT28C64B 1N914 28C64B 28C64B-12 28C64B-15 28C64B-90 CAT28C64BNI-15T 1805F

    CAT28LV256

    Abstract: No abstract text available
    Text: Preliminary CAT28LV256 Preliminary CAT28LV256 256K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: 250/300/350 ns ■ Automatic Page Write Operation: – 1 to 64 Bytes in 10ms – Page Load Timer ■ Low Power CMOS Dissipation:


    Original     		PDF CAT28LV256 256K-Bit 300-T CAT28LV256

    BS62LV2003

    Abstract: BS62LV2003SC BS62LV2003SI BS62LV2003STC BS62LV2003STI BS62LV2003TC BS62LV2003TI TSOP-32
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2003 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current


    Original     		PDF BS62LV2003 100ns BS62LV2003 R0201-BS62LV2003 100ns -40oC BS62LV2003SC BS62LV2003SI BS62LV2003STC BS62LV2003STI BS62LV2003TC BS62LV2003TI TSOP-32

    BS62UV2001

    Abstract: BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI
    Text: Preliminary Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit BSI BS62UV2001 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade : 15mA Max. operating current I- grade : 20mA (Max.) operating current


    Original     		PDF BS62UV2001 120ns 150ns BS62UV2001 R0201-BS62UV2001 -40oC BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI

    CAT28LV64

    Abstract: 28LV64 28LV64-25
    Text: Preliminary CAT28LV64 Preliminary CAT28LV64 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6 V Supply ■ Commercial and Industrial Temperature Ranges ■ Read Access Times: ■ CMOS and TTL Compatible I/O – 250/300/350ns ■ Automatic Page Write Operation:


    Original     		PDF CAT28LV64 64K-Bit 250/300/350ns CAT28LV64 300-T 28LV64 28LV64-25

    1N914

    Abstract: CAT28HT256
    Text: CAT28HT256 Preliminary Preliminary CAT28HT256 Extended Temperature: 170˚C 2 256K-Bit CMOS E PROM FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: –1 to 64 Bytes in 10ms –Page Load Timer ■ Low Power CMOS Dissipation:


    Original     		PDF CAT28HT256 256K-Bit CAT28HT256 300-T 1N914

    R1LP0108ESA-7SR

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		PDF R1LP0108E R10DS0151EJ0100 072-word 32-pin R1LP0108ESA-7SR

    Untitled

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		PDF R1LP0108E R10DS0029EJ0300 072-word 32-pin