MAMO-000900-1291HT
Abstract: MAMO-000900-1291MT
Text: MAMO-00900-1291HT I/Q Modulator/Demodulator 850-960 MHz Rev. V3 Features • • • • • • • Excellent Carrier Suppression ~34dBc 6.0 dB Typical Modulator Conversion Loss +17 to +20 dBm LO Drive High 3x1 and 5x1 Harmonic Suppression No External Matching Required
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MAMO-00900-1291HT
34dBc
MAMO-000900-1291HT
28lead
MAMO-000900-1291MT
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Untitled
Abstract: No abstract text available
Text: 2nd 3rd Harmonic vs Pout MAX3509 22MHz 2:1 Pin=33,34,35dBmV 70 65 60 dBc 55 34dBc2 34dBc3 35dBc2 35dBc3 33dBc2 33dBc3 50 45 40 35 30 57 58 59 60 61 62 63 64 Pout dBmV 65 66 67 68 69 70 71
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MAX3509
22MHz
35dBmV
34dBc2
34dBc3
35dBc2
35dBc3
33dBc2
33dBc3
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MAX2150
Abstract: MAX2150ETI J103 transistor 3 pin cpx 1uF TEW 20MHZ Crystal
Text: 19-2389; Rev 0; 4/02 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer Features ♦ Single Voltage Supply 2.7V to 3.6V The device typically achieves 34dBc of carrier and sideband suppression at a -1dBm output level. The wideband, internally matched RF output can also
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34dBc
28-pin
75MHz
700MHz
2300MHz
100mHz
MAX2150
MAX2150ETI
J103 transistor 3 pin
cpx 1uF
TEW 20MHZ Crystal
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MAX2150
Abstract: TCXO 40MHz TEW 20MHZ Crystal MAX2150ETI wideband DAC modulator 2.5 GHz
Text: 19-2389; Rev 1; 8/03 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer Features ♦ Single Voltage Supply 2.7V to 3.6V The device typically achieves 34dBc of carrier and sideband suppression at a -1dBm output level. The wideband, internally matched RF output can also
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34dBc
28-pin
75MHz
700MHz
2300MHz
100mHz
MAX2150
TCXO 40MHz
TEW 20MHZ Crystal
MAX2150ETI
wideband DAC modulator 2.5 GHz
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Untitled
Abstract: No abstract text available
Text: 2nd 3rd Harmonics vs. Pout MAX3509 65MHz 2:1 Pin=33, 34, 35dBmV 70 65 60 dBc 55 34dBc2 34dBc3 33dBc2 33dBc3 35dBc2 35dBc3 50 45 40 35 30 57 58 59 60 61 62 63 64 Pout dBmV 65 66 67 68 69 70 71
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MAX3509
65MHz
35dBmV
34dBc2
34dBc3
33dBc2
33dBc3
35dBc2
35dBc3
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ic 4800b
Abstract: 4800b max 4800b smd ic 4800b transistor circuit diagram of 4800b 4800b ic 4800B smd 4800B POWER IC max 4800b CIRCUIT 4800b
Text: TSH690 40MHz to 1GHz AMPLIFIER • ■ ■ ■ ■ ■ ■ Supply voltage: 1.5V to 5V >20 mW adjustable output power 28 dB gain at 450 MHz 21 dB gain at 900 MHz 50 Ω matched input and output Bias pin to adjust the amplification class Power down PACKAGE
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TSH690
40MHz
TSH690
ic 4800b
4800b
max 4800b smd ic
4800b transistor
circuit diagram of 4800b
4800b ic
4800B smd
4800B POWER IC
max 4800b
CIRCUIT 4800b
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QFN-48 pin 49
Abstract: No abstract text available
Text: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with
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MAX2369
G4877
21-0092H
G4877-1*
QFN-48 pin 49
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UMLC1111B
Abstract: UMLC1-111B UMLC1
Text: 中国3G TD-SCDMA用 RF模块 UMLC1-111B ! 0.18ml微型模块将推进 世界首创 中国的 3G。 13mm W: 9mm D: 1.5mm H: 采用仿真技术对配套IC进行了优化，能控制散差，发挥稳定的性能。 ●适应3GPP TS25.102 Power Class 2（+24dBm）。
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UMLC1-111B
24dBm
2010MHz
2025MHz
-38dBc
-34dBc
UMLC1111B
UMLC1-111B
UMLC1
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ic 4800b
Abstract: 4800B max 4800b smd ic 4800b ic 4800b transistor 4800B datasheet circuit diagram of 4800b max 4800b 4800B smd 4800B datasheet smd
Text: TSH690 40MHz to 1GHz AMPLIFIER • ■ ■ ■ ■ ■ ■ Supply voltage: 1.5V to 5V >20 mW adjustable output power 28 dB gain at 450 MHz 21 dB gain at 900 MHz 50 Ω matched input and output Bias pin to adjust the amplification class Power down PACKAGE DESCRIPTION
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TSH690
40MHz
TSH690
ic 4800b
4800B
max 4800b smd ic
4800b ic
4800b transistor
4800B datasheet
circuit diagram of 4800b
max 4800b
4800B smd
4800B datasheet smd
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qualcomm msm 8660
Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
Text: 1 2 3 4 5 6 7 ! " 8 # 9 !
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RF2043
RF2044
RF2045
RF2046
RF2047
RF2048
RF2103P
org/jedec/download/std020
qualcomm msm 8660
ecu repair
proton rx 4000 watts power amplifier circuit diagram
preamplifier proton 1100
MOBILE jammer GSM 1800 MHZ circuit diagram
Qualcomm 8200
proton rx 3000
RF2713
433MHz saw Based Transmitter Schematic and PCB La
RF2517
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CA942
Abstract: 48V dc supply GSM LNA LINE FILTER FOR 900MHZ GSM900 base station high power amplifier Filtronic comtek
Text: CA942 GSM900, 6 Channel In-Line Uplink Enhancer FEATURES • High linearity • Low noise contribution • High reliability • High return loss • Available as RoHS compliant Inspired Wireless Solutions BENEFITS • Reduces dropped calls in rural areas by
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CA942
GSM900,
CA942
900MHz
48V dc supply
GSM LNA
LINE FILTER FOR 900MHZ
GSM900
base station high power amplifier
Filtronic comtek
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AN1737
Abstract: APP1737 MAX2510 MAX5183 i q modulator
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, wireless, modulator, if, lo, dac, rfic, rf ics Sep 19, 2002 APPLICATION NOTE 1737 MAX2510 I/Q Modulator Performance In The Presence of DC Offset Voltages Abstract: RF systems which require direct coupling between the baseband output DAC and the input to the I/Q
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MAX2510
com/an1737
MAX2510:
MAX5183:
AN1737,
APP1737,
Appnote1737,
AN1737
APP1737
MAX5183
i q modulator
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8593E
Abstract: AN0001 AN1892 RF2422
Text: AN0001 15 AN0001 Optimization of Quadrature Modulator Performance Optimization of Quadrature Modulator Performance Introduction Quadrature modulators are common building blocks in a communications link. By their nature they are capable of sending virtually any modulation scheme. They can send both analog, such as AM and FM, and digital modulation schemes,
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AN0001
RF2422.
RF2422
AN1892,
8593E
AN0001
AN1892
RF2422
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Untitled
Abstract: No abstract text available
Text: High Performance ISM Band ASK/FSK/GFSK Transmitter IC ADF7011 FEATURES Single Chip Low Power UHF Transmitter Frequency Band 433 MHz to 435 MHz 868 MHz to 870 MHz On-Chip VCO and Fractional-N PLL 2.3 V to 3.6 V Supply Voltage Programmable Output Power –16 dBm to +12 dBm, 0.3 dB Steps
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ADF7011
24-Lead
ADF7011
1184MHz
84MHZ
RU-24)
MO-153AD
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031pf
Abstract: No abstract text available
Text: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with
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MAX2369
MAX2369
031pf
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le817
Abstract: DB4 antenna uhf CRYSTAL 22.1184 DFCB2869MLEJAA-TT1 UHF DETECTOR F1-F11 sharp UHF modulator 433mhz rf power amplifier 500 mw 42368 ADF7011BRU-REEL
Text: High Performance ISM Band ASK/FSK/GFSK Transmitter IC ADF7011 FEATURES Single Chip Low Power UHF Transmitter Frequency Band 433 MHz to 435 MHz 868 MHz to 870 MHz On-Chip VCO and Fractional-N PLL 2.3 V to 3.6 V Supply Voltage Programmable Output Power –16 dBm to +12 dBm, 0.3 dB Steps
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ADF7011
24-Lead
ADF7011
24-bit
DFCB2869MLEJAA-TT1
1184MHz
84MHZ
Diagram--868
le817
DB4 antenna uhf
CRYSTAL 22.1184
DFCB2869MLEJAA-TT1
UHF DETECTOR
F1-F11
sharp UHF modulator
433mhz rf power amplifier 500 mw
42368
ADF7011BRU-REEL
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AN1997
Abstract: APP1997 MAX2510
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Apr 28, 2003 Keywords: rf, phs, transceiver, wireless, rfic, spectrum APPLICATION NOTE 1997 500mW PHS Transmitter Meets Transient Spectrum Requirements with Edge Control Abstract: If the control signal's transition time is not controlled, the output spectrum of a 500mW PHS base
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500mW
MAX2510,
MAX2510
200mW
com/an1997
MAX2510:
AN1997,
APP1997,
AN1997
APP1997
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marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
Oct2011
marking 7W 66
AN-UHF-105
transistor jc 817
AN-UHF-116
AN-UHF116
GP 830 diode
diode gp 424
AN-900-041
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IEC802
Abstract: 188g
Text: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with
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MAX2369
MAX2369
IEC802
188g
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MAX2150
Abstract: MAX2150ETI J1014 TEW 20MHZ Crystal
Text: 19-2389; Rev 4; 6/08 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer The MAX2150 is a complete wideband direct upconversion quadrature modulator IC incorporating a 28-bit sigma-delta fractional-N synthesizer. The device is targeted for applications in the 700MHz to 2300MHz frequency range.
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MAX2150
28-bit
700MHz
2300MHz
50mHz
10MHz
MAX2150
MAX2150ETI
J1014
TEW 20MHZ Crystal
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RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
RD07MUS2
RD07MUS
diode gp 424
RD07M
AN-VHF-046
AN-UHF-116
f763
AN-UHF-106
AN-VHF-053
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MAX2150
Abstract: MAX2150ETI J1017
Text: 19-2389; Rev 3; 3/06 Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer The MAX2150 is a complete wideband direct upconversion quadrature modulator IC incorporating a 28-bit sigma-delta fractional-N synthesizer. The device is targeted for applications in the 700MHz to 2300MHz frequency range.
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MAX2150
28-bit
700MHz
2300MHz
50mHz
10MHz
MAX2150ETI
J1017
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Untitled
Abstract: No abstract text available
Text: High Performance ISM Band ASK/FSK/GFSK Transmitter IC ADF7010 a FEATURES Single Chip Low Power UHF Transmitter 902 MHz–928 MHz Frequency Band On-Chip VCO and Fractional-N PLL 2.3 V–3.6 V Supply Voltage Programmable Output Power –16 dBm to +12 dBm, 0.3 dB Steps
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ADF7010
24-Lead
ADF7010
24-bit
C03143â
RU-24)
MO-153AD
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bsim3 model
Abstract: 1000 watt power supply scheme class E power amplifier Class E amplifier capacitor huang bsim3 ADS GSM Transceiver chip single transistor amplifier circuits bsim3 27 Mhz power amplifier
Text: Chapter 6 CMOS Class-E Power Amplifier 6.0 Introduction Last few years have seen an increase in the popularity of the wireless communication systems. As a result, the demand for compact, low-cost, and low power portable transceivers has increased dramatically [Gray and Meyer, 1995]. A proposed
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