3400 TRANSISTOR Search Results

3400 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

3400 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
samsung colour tv kit circuit diagram Abstract: acer laptop motherboard ferrari 3400 series bcm4306 PA-1900-05 hp laptop MOTHERBOARD pcb CIRCUIT diagram hp mini laptop MOTHERBOARD pcb CIRCUIT diagram CSR BC212 hp laptop battery pin definition acer laptop motherboard circuit diagram BCM4306kfb Text: Acer Ferrari 3400 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw Revision History Please refer to the table below for the updates made on Ferrari 3400 service guide.	Original		PDF
13009 TRANSISTOR equivalent Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to	Original	MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent	PDF
ATC600S Abstract: AVX0805 AVX1206 CRF35010 Text: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has	Original	CRF35010F CRF35010 CRF350 CRF35010F ATC600S AVX0805 AVX1206	PDF
transistor BV-1 501 Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 — 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 BLF6G38LS-50 transistor BV-1 501 smd 501 transistor C5750X7R1H106M 30RF35 RF35 VJ1206Y104KXB	PDF
TRANSISTOR j412 Abstract: J412 - TRANSISTOR SMD BLF6G38S-25 Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD	PDF
transistor d 13009 Abstract: 13009 TRANSISTOR equivalent 136.21 200B393KP50X CDR33BX104AKWS MRFG35030 MRFG35030R5 RO4350 Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	MRFG35030R5 transistor d 13009 13009 TRANSISTOR equivalent 136.21 200B393KP50X CDR33BX104AKWS MRFG35030 MRFG35030R5 RO4350	PDF
Untitled Abstract: No abstract text available Text: BLF8G38LS-75V Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.	Original	BLF8G38LS-75V	PDF
Untitled Abstract: No abstract text available Text: BLF8G38LS-75V Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	BLF8G38LS-75V	PDF
13009 TRANSISTOR equivalent Abstract: MRFG35030 transistor d 13009 MRFG35030R5 Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	MRFG35030R5 13009 TRANSISTOR equivalent MRFG35030 transistor d 13009	PDF
Untitled Abstract: No abstract text available Text: BLF8G38LS-75V Power LDMOS transistor Rev. 2 — 9 January 2014 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.	Original	BLF8G38LS-75V	PDF
MC13892 Abstract: FET GAAS marking a transistor z4 30 transistor d 13009 H 9832 C696 MARKING Z7 RF TRANSISTOR 2.5 GHZ s parameter mc13892 schematic MRFG35030 Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	MRFG35030R5 MC13892 MC13892 FET GAAS marking a transistor z4 30 transistor d 13009 H 9832 C696 MARKING Z7 RF TRANSISTOR 2.5 GHZ s parameter mc13892 schematic MRFG35030	PDF
3400 transistor Abstract: transistor 3400 3134-65M Text: 3134-65M Rev B 3134-65M 65Watts, 34 Volts, 200us, 10% Radar 3100-3400 MHz GENERAL DESCRIPTION CASE OUTLINE Common Base The 3134-65M is an internally matched, COMMON BASE bipolar transistor capable of providing 65Watts of pulsed RF output power at 200us pulse width,	Original	3134-65M 3134-65M 65Watts, 200us, 65Watts 200us 3400 transistor transistor 3400	PDF
TRANSISTOR J601 Abstract: gp816 RF35 J2396 J249 Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249	PDF
Untitled Abstract: No abstract text available Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100	PDF

smd transistor 3400 Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor 3400 smd transistor equivalent table J412 - TRANSISTOR SMD C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35 722 smd transistor	PDF
Untitled Abstract: No abstract text available Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance	Original	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100	PDF
C5750X7R1H106M Abstract: 30RF35 Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1.	Original	BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35	PDF
30RF35 Abstract: BLF6G38-50 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 30RF35 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB	PDF
BLF6G38S-25 Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z	PDF
13009 TRANSISTOR equivalent Abstract: transistor d 13009 Text: MOTOROLA Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	MRFG35030R5/D MRFG35030R5 MRFG35030R5 MRFG35030R5/D 13009 TRANSISTOR equivalent transistor d 13009	PDF
J209 Abstract: MW7IC3825GN MW7IC3825GNR1 MW7IC3825NR1 Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage	Original	MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 J209 MW7IC3825GN	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage	Original	MW7IC3825N MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1	PDF
rt6010 Abstract: J555 Text: 3134-100R1 3134-100 100 Watts, 36 Volts, 100µs, 10% Radar 3100-3400 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 3134-100 is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 100µõ	Original	3134-100R1 55KS-1 rt6010 J555	PDF
4000 watts power amplifier circuit diagram Abstract: 3600 watts power amplifier circuit diagram transistors BC 458 schematic diagram 800 watt power amplifier transistor BC 458 C4532X5R1H475M CRCW08051001FKEA MW7IC3825NBR1 MW7IC3825NR1 A114 Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 0, 11/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on - chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage	Original	MW7IC3825N MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 4000 watts power amplifier circuit diagram 3600 watts power amplifier circuit diagram transistors BC 458 schematic diagram 800 watt power amplifier transistor BC 458 C4532X5R1H475M CRCW08051001FKEA MW7IC3825NBR1 A114	PDF

3400 TRANSISTOR Search Results

3400 TRANSISTOR Result Highlights (5)

3400 TRANSISTOR Datasheets Context Search

samsung colour tv kit circuit diagram

13009 TRANSISTOR equivalent

ATC600S

transistor BV-1 501

TRANSISTOR j412

transistor d 13009

Untitled

Untitled

13009 TRANSISTOR equivalent

Untitled

MC13892

3400 transistor

TRANSISTOR J601

Untitled

smd transistor 3400

Untitled

C5750X7R1H106M

30RF35

BLF6G38S-25

13009 TRANSISTOR equivalent

J209

Untitled

rt6010

4000 watts power amplifier circuit diagram