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    335N Search Results

    335N Result Highlights (2)

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    HM2P65PDP335N2LF Amphenol Communications Solutions Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 row vertical Header, Module Type AB 25 Pos with 125 signal pins , shielded and RoHS compatabile Visit Amphenol Communications Solutions
    HM2P65PDP335N9LF Amphenol Communications Solutions Back Plane Connectors,2mm Hard Metric Series,Millipacs, Vertical Header, Type AB, 125 Signal Pin, Press Fit Tail, 250 mating cycles and ROHS Compliant Visit Amphenol Communications Solutions
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    onsemi FDN335N

    MOSFET N-CH 20V 1.7A SUPERSOT3
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    DigiKey FDN335N Reel 27,000 3,000
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    New Advantage Corporation FDN335N 1,341,000 1
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    UMW FDN335N

    SOT-23 MOSFETS ROHS
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    DigiKey FDN335N Cut Tape 5,720 1
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    EVVO Semiconductor FDN335N-EV

    MOSFET N-CH 20V 1.7A SOT-23
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    DigiKey FDN335N-EV Digi-Reel 2,960 1
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    Elesa SPA CE982833-5N

    DD52R (INCH SIZES), MECHANICAL P
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    Elesa SPA CE982733-5N

    DD52R (INCH SIZES), MECHANICAL P
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    335N Datasheets (2)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    335NPS025M Illinois Capacitor NPS +85°C Non-Polar Surface Mount Chip Aluminum Electrolytic Capacitors Original PDF
    335NPS050M Illinois Capacitor NPS +85°C Non-Polar Surface Mount Chip Aluminum Electrolytic Capacitors Original PDF

    335N Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: 335NPS050M BI-PO LAR SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Parts are RoHS com pliant Date code w hen parts became RoHS: 23 ELECTRICAL SPECIFICATIONS C apacitance: 3.3 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.14 Max at 120 Hz and 20°C


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    335NPS050M PDF

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: 335NCN050M BI-PO LAR SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 15 ELECTRICAL SPECIFICATIONS C apacitance: 3.3 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.18 Max at 120 Hz and 20°C


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    335NCN050M PDF

    ARF461AG

    Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
    Text: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been


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    ARF461A ARF461B 65MHz ARF461AG VK200-4B 40.68mhz 40.68MHz power amplifier PDF

    104NCN050M

    Abstract: 105NCN050M 224NCN050M 225NCN035M 225NCN050M 334NCN050M 335NCN050M 474NCN050M 475NCN016M
    Text: 105 220v 6 +105°C Non-polarized Surface Mount Aluminum Electrolytic Capacitors NCN FEATURES • 5.5 mm height ■ Automatic insertion applicable ■ Capacitance Range .1 to 47 µF ■ Standard Case Sizes SPECIFICATIONS Capacitance Tolerance ±20% at 120Hz, 20°C


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    120Hz, 120Hz) 104NCN050M 105NCN050M 224NCN050M 225NCN035M 225NCN050M 334NCN050M 335NCN050M 474NCN050M 475NCN016M PDF

    Untitled

    Abstract: No abstract text available
    Text: A D S -9 2 7 1MHz, 14-Bit, Low-Power Sampling A/D Converter INNOVATION a n d EXCELLENCE FEATURES • • • • • • • • 14-Bit resolution 1MHz sampling rate No missing codes Functionally complete Small 24-pin DDIP Low power, 1.95 Watts maximum Operates from ±15V or ±12V supplies


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    14-Bit, 14-Bit 24-pin S-927 ADS-927 -80dB DS-927 DS-0264B PDF

    HM4716

    Abstract: HM4864P2
    Text: H M 4 8 6 4 - 2 , H M 4 8 6 4 - 3 - HM4864P-2, HM4864P-3 6 5 5 3 6 -word x 1-bit Dynamic Random A cce ss Memory The HM4864 is a 65,536-words by 1-bit, MOS random access memory circuit fabricated with H IT A C H I'S double-poly N-channel H M 4 86 4 -2 , H M 4864-3


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    HM4864P-2, HM4864P-3 HM4864 536-words HM4716 HM4864P2 PDF

    Untitled

    Abstract: No abstract text available
    Text: a P R E L IM IN A R Y Advanced Micro Devices Am79C830A FORMAC Plus DISTINCTIVE CHARACTERISTICS • Implements the FDDI Media Access Control MAC layer protocol for ISO standard 9314-2 ■ Pointers to claim and beacon frames ■ Buffer-memory clock frequency range:


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    Am79C830A Am29000 0117A-7 ns-----44 PDF

    2SK1500

    Abstract: 2SK1502 2SK1535 2SK1537 2SK1513 235n 2501L 2SK1501 2SK1531 2SK1438
    Text: - 108 - ft m % *± £ m & m £ A V* it ft K V, tt m * (V ft * ffi X P d/P c h £ * (W) I* (A) less (max) (A) Vg s (V) (Ta=25T) 1Ï m S Id s (min) (max) V d s (A) (A) (V) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s (S) (V) Id (A) 2SK1497


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    2SK1497 2SK1438 2SK1499 2SK1500 2SK1501, 1501-Z 580nstyp 2SK1526 235ns, 2SK1502 2SK1535 2SK1537 2SK1513 235n 2501L 2SK1501 2SK1531 PDF

    2SK520

    Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
    Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id


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    2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK521 100MHZ 2SK522 20mVmax 2SK523 2SK520 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43 PDF

    upd4265

    Abstract: 4265 AAFW
    Text: SEC /iP D 4 2 6 5 6 5 ,5 3 6 x 1 -B IT D Y N A M IC CMOS RAM NEC Electronics Inc. Revision 1 Pin Configuration D e scrip tio n T h e N E C /UPD4265 is a 6 5 ,5 3 6 -w o rd b y 1 -b it d y n a m ic C M O S R a n d o m A c c e s s M e m o ry R A M d e s ig n e d to


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    UPD4265 536-word PD4265 xPD4265 4265 AAFW PDF

    arco mica trimmer

    Abstract: class B push pull power amplifier ARF461A ARF461B VK200-4B class td amplifier
    Text: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been


    Original
    ARF461A ARF461B O-247 65MHz ARF461A ARF461B O-247 335nH VK200-4B ARF461A/B arco mica trimmer class B push pull power amplifier class td amplifier PDF

    WLP 1500

    Abstract: No abstract text available
    Text: 19-5493; Rev 0; 9/10 TION KIT EVALUA BLE IL AVA A RF Power Detector with Shutdown Control The MAX2209A is a wideband 800MHz to 2GHz RF power detector. It takes an RF signal from the directional coupler at the input, and outputs a DC voltage proportional to the RF peak voltage. The change in output


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    MAX2209A 800MHz -25dBm 140ns MAX2209A WLP 1500 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2345671589A 9BCDEFEFBDBCEFBFEDBECB 9BCDEFEE2 !  '$EB ###EB + 234567389 ! *7+9,!-!.ED#C$E%%BCE /E'$E#E0+*F /E#E*.2 /


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    345671589A E1465 ABBCDE45DF 6788D PDF

    Untitled

    Abstract: No abstract text available
    Text: Small size – Non/Bi-polar FEATURES Bypass – Coupling – Filtering APPLICATIONS Operating Temperature Range Capacitance Tolerance WVDC Surge voltage SVDC WVDC Dissipation Factor 6.3 7.9 6.3 .32 10 13 10 .26 16 20 16 .24 Rated WVDC 6.3 10 16 -25°C to +20°C


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    474NCN050M 105NCN050M 225NCN050M 225NCN035M 335NCN050M 475NCN050M 475NCN035M 475NCN016M 106NCN016M 106NCN035M PDF

    Untitled

    Abstract: No abstract text available
    Text: APT26F120B2 APT26F120L 1200V, 27A, 0.58Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original
    APT26F120B2 APT26F120L 335ns O-264 O-247 PDF

    104NCN050M

    Abstract: 225NCN050M 334NCN050M 335NCN050M 474NCN050M 475NCN016M 105NCN050M 224NCN050M 225NCN035M
    Text: 105 220v 6 NCN Surface Mount +105°C Non-polarized Surface Mount Aluminum Electrolytic Capacitors FEATURES • 5.5 mm height ■ Automatic insertion applicable ■ Capacitance Range .1 to 47 µF ■ Standard Case Sizes SPECIFICATIONS Capacitance Tolerance


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    120Hz, 120Hz) 104NCN050M 225NCN050M 334NCN050M 335NCN050M 474NCN050M 475NCN016M 105NCN050M 224NCN050M 225NCN035M PDF

    le2 20

    Abstract: le220
    Text: ISOLATION TRANSFORMERS SERIES ‘LE’ LAN-ETHERNET APPLICATIONS 0.865MAX 122.5» Econom ical Low leakag e in d u ctan ce and interw in d in g capa citan ce Fast rise tim e 3n S ec typ. Low p ro file 16-pin D IP 14-p in avail. S u rface M o u n t design availab le


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    16-pin 865MAX LE1-20 LE1-100 LE1-200 LE2-20 LE2-50 LE2-100 LE2-200 20/jH le2 20 le220 PDF

    APT26F120B2

    Abstract: APT26F120L MIC4452
    Text: APT26F120B2 APT26F120L 1200V, 27A, 0.58Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    APT26F120B2 APT26F120L 335ns O-264 APT26 O-247 APT26F120B2 APT26F120L MIC4452 PDF

    2SK30

    Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
    Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id


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    2SJ299 2SJ300 2SJ317 2SK11 2SK12 10DGS, 2SK41NP 2SK25 2SK30ATM 2SK30 2SK30 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33 PDF

    UPD4265

    Abstract: No abstract text available
    Text: SEC /¿PD4265 6 5 ,5 3 6 x 1 -BIT DYNAMIC CMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The NEC /UPD4265 is a 65,536-word by 1-bit d ynam ic CM O S Random Access M em ory RAM designed to operate from a single + 5 V p ow er supply. The


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    uPD4265 536-word PD4265 PD4265 PDF

    104NPS050M

    Abstract: 105NPS050M 224NPS050M 225NPS035M 225NPS050M 334NPS050M 335NPS050M 474NPS050M 475NPS016M
    Text: +85°C Non-Polar Surface Mount Chip Aluminum Electrolytic Capacitors NPS 85 1 50v FEATURES • Audio Coupling ■ Wide Capacitance Range: .1 to 47 µF ■ Standard Case Sizes ■ Solvent Proof ■ Operating Voltage Range: 6.3WVDC to 50 WVDC SPECIFICATIONS


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    120Hz, 120Hz 120Hz) 104NPS050M 105NPS050M 224NPS050M 225NPS035M 225NPS050M 334NPS050M 335NPS050M 474NPS050M 475NPS016M PDF

    Untitled

    Abstract: No abstract text available
    Text: NCN Aluminum Electrolytic Capacitors +105ºC Bi-polar Surface Mount FEATURES APPLICATIONS Standardized case sizes – 5.4 mm height Bypass – Filtering – Coupling – De-coupling Operating Temperature Range -40°C to +85°C Capacitance Tolerance +20% at 120 Hz, 20°C


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    225NCN035M 225NCN050M 335NCN050M 475NCN016M 475NCN035M 475NCN050M 106NCN016M 106NCN035M 226NCN6R3M 226NCN016M PDF

    .00p

    Abstract: KEL SL00 335N
    Text: NOTES HEADER rn 1Î l\ j'1 Y I. MATES WITH : 55 5 7 S E R I E S PIN A IN CASE OF 2 C I R C U I T S HEADER, T H IS DIMENSION SHOULD BE 4.2mm. 3. M A TE R IA L & FINISH ENG. NO. 5569-NAI -NA 1-2 10 -NA 1-310 -NAGI -NAG 1-2 10 -NAG 1-3 10 -NAIG3 - N A IG 3 - 2 I0


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    5569-NAI .00p KEL SL00 335N PDF

    APT26F120B2

    Abstract: APT26F120L MIC4452 DTA105
    Text: APT26F120B2 APT26F120L 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original
    APT26F120B2 APT26F120L 335ns O-247 APT26F120B2 APT26F120L MIC4452 DTA105 PDF