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    3310 DIODE DATASHEET Search Results

    3310 DIODE DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    3310 DIODE DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S3310

    Abstract: CEP75N10 S 3310
    Text: CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS ON = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


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    CEP75N10/CEB75N10 O-220 O-263 S3310 CEP75N10 S 3310 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


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    IRFB18N50K, SiHFB18N50K O-220 O-220 IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50Khay 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


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    IRFB18N50K, SiHFB18N50K O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    irfb18n50k

    Abstract: No abstract text available
    Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


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    IRFB18N50K, SiHFB18N50K O-220 O-220 IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50Ktrademarks 2011/65/EU 2002/95/EC. 2002/95/EC irfb18n50k PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


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    IRFB18N50K, SiHFB18N50K O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    S3310A

    Abstract: BAYER COLOUR PATTERN VV5301/VV6301 VV5301 VV6301 VV5301-VV6301 "frame grabber" S 3310
    Text: VV5301 & VV6301 Mono and Colour QSIF Digital Video CMOS Image Sensors The VV5301 and VV6301 are highly integrated digital output imaging devices based on STMicroelectronics’s unique CMOS sensor technology. Both of these sensors require minimal support circuitry and provide an ideal low


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    VV5301 VV6301 VV5301 VV6301 cd5301 6301f-3-0 S3310A BAYER COLOUR PATTERN VV5301/VV6301 VV5301-VV6301 "frame grabber" S 3310 PDF

    VV5301

    Abstract: VV6301 "frame grabber"
    Text: VV5301 & VV6301 Mono and Colour QSIF Digital Video CMOS Image Sensors Hardware Manual Edition September 2000 A product of a PHYTEC Technology Holding company Reprinted with the permission of VISION by PHYTEC Meßtechnik GmbH, Mainz VV5301 & VV6301 Mono and Colour QSIF Digital Video CMOS Image Sensors


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    VV5301 VV6301 VV5301 VV6301 cd5301 6301f-3-0 "frame grabber" PDF

    TRANSISTOR SMD MARKING CODE 3401

    Abstract: DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code
    Text: Infrared Components ge 88 - 92 107 108 Infrared Components Summary of Types Silicon Photodetectors For moreComponents Infrared detailed product Summary information of Types andSilicon technical Photodetectors datasheets, please visit http://catalog.osram-os.com


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    GEXY6713 TRANSISTOR SMD MARKING CODE 3401 DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code PDF

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor PDF

    TRANSISTOR SMD MARKING CODE 3401

    Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
    Text: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111


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    GEMY6050 TRANSISTOR SMD MARKING CODE 3401 Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62 PDF

    TPS53311

    Abstract: No abstract text available
    Text: TPS53310 www.ti.com SLUSA68 – DECEMBER 2010 3-A Step-Down Regulator with Integrated Switcher Check for Samples: TPS53310 FEATURES LOW VOLTAGE APPLICATIONS • • • • • • • 1 2 • • • • • • • • • • • • >95% Maximum Efficiency


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    TPS53310 SLUSA68 TPS53311 PDF

    TPS53311

    Abstract: No abstract text available
    Text: TPS53310 www.ti.com SLUSA68 – DECEMBER 2010 3-A Step-Down Regulator with Integrated Switcher Check for Samples: TPS53310 FEATURES LOW VOLTAGE APPLICATIONS • • • • • • • 1 2 • • • • • • • • • • • • >95% Maximum Efficiency


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    TPS53310 SLUSA68 16-Pin TPS53311 PDF

    data vision p113

    Abstract: DATA VISION P118 ln 7805 VV6300 S2016A IC3 7805 ir p119 IR P116 48LCC VLSI Vision
    Text: VV6300 Sensor Integrated CMOS Colour Image Sensor with on-chip ADC. Key Features • Standard image format: 160 x 120 • 2 serial data output modes • 164 x 124 Bayer Patern colour pixel array • Automatic exposure and gain controller • Variable frame rate < 0.3 f/s - 60 f/s


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    VV6300 highly-integrate408 cd34021-a data vision p113 DATA VISION P118 ln 7805 S2016A IC3 7805 ir p119 IR P116 48LCC VLSI Vision PDF

    data vision p113

    Abstract: 07H07H DATA VISION P118 ln 7805 ln 7805 regulator VLSI Vision IC2 7805 7805 12v to 5v P241H P102
    Text: VV5300 Sensor Integrated CMOS Image Sensor with on-chip ADC. DISTINCTIVE CHARACTERISTICS Standard image format: 160 x 120 • 164 x 124 pixel array • Variable frame rate 2 fps - 60 fps • On-chip 8-bit A/D convertor • 8-bit and 4-bit conversion modes


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    VV5300 cd34011-b data vision p113 07H07H DATA VISION P118 ln 7805 ln 7805 regulator VLSI Vision IC2 7805 7805 12v to 5v P241H P102 PDF

    diode HER 303 BL

    Abstract: ideal corporate gesture QCIF-25fps STV0680B-003 STV0680B v6411 STV0672 74181 cmos NTSC IMAGE SENSOR VV5410
    Text: VV5411 & VV6411 Mono and Colour Digital Video CMOS Image Sensors The VV5411/VV6411 are multi-format digital output imaging devices based on STMicroelectronics’s unique CMOS sensor technology. Both sensors require minimal support circuitry. The VV6411 and


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    VV5411 VV6411 VV5411/VV6411 VV6411 VV5411 VV6410 VV5410, 6411also diode HER 303 BL ideal corporate gesture QCIF-25fps STV0680B-003 STV0680B v6411 STV0672 74181 cmos NTSC IMAGE SENSOR VV5410 PDF

    power BJT anti saturation diode

    Abstract: STV0657 STV0672 STV0680B-001 VV6500 48LCC STV0657 STV0672 STV0680B-001 TBA audio power amplifiers 12 pin vga cmos camera pinout sensor 13 L
    Text: VV5500 & VV6500 Mono and Colour Digital Video CMOS Image Sensors PRELIMINARY RELEASE Key Features • 3.3V operation • Multiple video formats available VV5500 monochrome and VV6500 (colourised) produce digital video output. The video streams from both devices


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    VV5500 VV6500 VV5500/VV6500 cd5500-6500f-2-2 power BJT anti saturation diode STV0657 STV0672 STV0680B-001 VV6500 48LCC STV0657 STV0672 STV0680B-001 TBA audio power amplifiers 12 pin vga cmos camera pinout sensor 13 L PDF

    "frame grabber"

    Abstract: Diode HF5
    Text: VV5411 & VV6411 Mono and Colour Digital Video CMOS Image Sensors The VV5411/VV6411 are multi-format digital output imaging devices based on STMicroelectronics’s unique CMOS sensor technology. Both sensors require minimal support circuitry. The VV6411 and


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    VV5411 VV6411 VV5411/VV6411 VV6411 VV5411 VV6410 VV5410, 6411also "frame grabber" Diode HF5 PDF

    74181

    Abstract: v6411 STV0680B-003 VV5410 VV5411 VV6410 VV6411 "automatic exposure" BAYER COLOUR PATTERN china ccd camera board circuit diagram
    Text: VV5411 & VV6411 Mono and Colour Digital Video CMOS Image Sensors The VV5411/VV6411 are multi-format digital output imaging devices based on STMicroelectronics’s unique CMOS sensor technology. Both sensors require minimal support circuitry. The VV6411 and


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    VV5411 VV6411 VV5411/VV6411 VV6411 VV5411 VV6410 VV5410, TV0676. 74181 v6411 STV0680B-003 VV5410 "automatic exposure" BAYER COLOUR PATTERN china ccd camera board circuit diagram PDF

    DCR2950W

    Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A PDF

    DCR2950W

    Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    DS5766-4. DCR2950W igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor PDF

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


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    DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes PDF

    cd5410-6410f

    Abstract: cd5410 mark AT0 EVK 233 stv6410 3 mobile phone "Camera Module" STV0657 STV0672 STV0680B-001 STV0657 STV0672 STV0680B-001
    Text: VV5410 & VV6410 Mono and Colour Digital Video CMOS Image Sensors The VV5410/VV6410 are multi format digital output imaging devices based on STMicroelectronics’s unique CMOS sensor technology. Both sensors require minimal support circuitry. Key Features


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    VV5410 VV6410 VV5410/VV6410 cd5410-6410f-3-0 cd5410-6410f cd5410 mark AT0 EVK 233 stv6410 3 mobile phone "Camera Module" STV0657 STV0672 STV0680B-001 STV0657 STV0672 STV0680B-001 PDF

    STMicroelectronics date code format

    Abstract: STV0657 STV0672 STV0680B-001 S-AV6 A3210 QCIF 60 fps SENSOR TECHNOLOGY STV0657 STV0672 AL 2001 VV5410
    Text: DOCUMENT 7257998 REVISION A CONTROLLED DOCUMENT Check latest revision DATE 13-JUN-2001 page: 1/110 VV5410 & VV6410 Key Features The VV5410/VV6410 are multi format digital output imaging devices based on STMicroelectronics’s unique CMOS sensor technology. Both sensors require minimal support


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    13-JUN-2001 VV5410 VV6410 VV5410/VV6410 7257998a STMicroelectronics date code format STV0657 STV0672 STV0680B-001 S-AV6 A3210 QCIF 60 fps SENSOR TECHNOLOGY STV0657 STV0672 AL 2001 VV5410 PDF

    Block diagram on monochrome tv receiver

    Abstract: sno 357 Block diagram on monochrome tv transmitter VLSI Vision monochrome diagram VV6404 48lcc cmos NTSC IMAGE SENSOR monochrome tv service manual 400G
    Text: VV5409 CMOS Monochrome Sensor Datasheet Restricted Rev 1.0 VISION VV5409 Digital CMOS Sensor CIF Format Monochrome Digital Image Sensor Table of Contents 1. CUSTOMER DATASHEET (RESTRICTED) 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 CHARACTERISTICS • • • • •


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    VV5409 CCIR-601/656 cd38041a Block diagram on monochrome tv receiver sno 357 Block diagram on monochrome tv transmitter VLSI Vision monochrome diagram VV6404 48lcc cmos NTSC IMAGE SENSOR monochrome tv service manual 400G PDF