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Catalog Datasheet	MFG & Type	PDF	Document Tags
S3310 Abstract: CEP75N10 S 3310 Text: CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS ON = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.	Original	PDF	CEP75N10/CEB75N10 O-220 O-263 S3310 CEP75N10 S 3310

Catalog Datasheet

MFG & Type

PDF

Document Tags

S3310

Abstract: CEP75N10 S 3310
Text: CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS ON = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Original

PDF

CEP75N10/CEB75N10 O-220 O-263 S3310 CEP75N10 S 3310