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    Panasonic Electronic Components 6TPE330MIL

    CAP TANT POLY 330UF 6.3V 2917
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    DigiKey 6TPE330MIL Reel 17,500 2,500
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    Mouser Electronics 6TPE330MIL 8,266
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    Newark 6TPE330MIL Cut Tape 1,505 5
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    TTI 6TPE330MIL Reel 22,500 2,500
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    Avnet Abacus 6TPE330MIL Reel 43 Weeks 2,500
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    Master Electronics 6TPE330MIL 5,050
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    Ozdisan Elektronik 6TPE330MIL
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    Panasonic Electronic Components 4TPE330MI

    CAP TANT POLY 330UF 4V 2917
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    DigiKey 4TPE330MI Cut Tape 7,724 1
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    4TPE330MI Digi-Reel 7,724 1
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    4TPE330MI Reel 3,000 3,000
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    Avnet Americas 4TPE330MI Reel 22 Weeks 3,000
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    Mouser Electronics 4TPE330MI 15,229
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    Newark 4TPE330MI Cut Tape 3,944 5
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    4TPE330MI Reel 3,000
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    RS 4TPE330MI Bulk 3,000
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    Bristol Electronics 4TPE330MI 3,000 4
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    TTI 4TPE330MI Reel 15,000 3,000
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    TME 4TPE330MI 20 1
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    Ameya Holding Limited 4TPE330MI 6,000
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    Avnet Abacus 4TPE330MI Reel 43 Weeks 3,000
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    Chip1Stop 4TPE330MI Cut Tape 2,765
    • 1 $1.89
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    Master Electronics 4TPE330MI 6,231
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    Ozdisan Elektronik 4TPE330MI
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    Panasonic Electronic Components 4TCE330MI

    CAP TANT POLY 330UF 4V 2917
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    DigiKey 4TCE330MI Cut Tape 3,054 1
    • 1 $2.79
    • 10 $1.817
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    4TCE330MI Digi-Reel 3,054 1
    • 1 $2.79
    • 10 $1.817
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    4TCE330MI Reel 3,000 3,000
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    Avnet Americas 4TCE330MI Reel 22 Weeks 3,000
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    Mouser Electronics 4TCE330MI 810
    • 1 $2.57
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    TME 4TCE330MI 1,500
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    Avnet Abacus 4TCE330MI Reel 43 Weeks 3,000
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    Master Electronics 4TCE330MI
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    New Advantage Corporation 4TCE330MI 6,000 1
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    Ozdisan Elektronik 4TCE330MI
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    Panasonic Electronic Components 2R5TAE330MI

    CAP TANT POLY 330UF 2.5V 2917
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    DigiKey 2R5TAE330MI Reel 3,000 3,000
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    Avnet Americas 2R5TAE330MI Reel 22 Weeks 3,000
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    Avnet Abacus 2R5TAE330MI Reel 44 Weeks 3,000
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    Panasonic Electronic Components 2R5THE330MI

    CAP TANT POLY 330UF 2.5V 2917
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    DigiKey 2R5THE330MI Cut Tape 2,975 1
    • 1 $1.72
    • 10 $1.289
    • 100 $0.9636
    • 1000 $0.67856
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    2R5THE330MI Digi-Reel 2,975 1
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    • 10 $1.289
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    Avnet Americas 2R5THE330MI Reel 22 Weeks 3,000
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    Avnet Abacus 2R5THE330MI Reel 43 Weeks 3,000
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    Master Electronics 2R5THE330MI
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    330MI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PCN10023

    Abstract: Simtek STK14C
    Text: Simtek Corporation 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA Fax: 719 531 9481 Tel: 719 531 9444 www.simtek.com Product Change Notification PCN10023 Dated: 24 August 2005 ISSUE Lot to lot variation in Moisture Sensitivity Level performance at 260C in 28 lead, 330mil SOIC package and 28/32


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    PDF PCN10023 330mil 300mil J-STD-020C Simtek STK14C

    SOIC28

    Abstract: SOIC-28
    Text: Conv DIL28/SOIC28 Z 330 - универсальный адаптер для микросхем в корпусе SOIC28 c ZIF колодкой, ширина корпуса 330mil. http://www.elnec.com/pics/convert/con0145b.jpg


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    PDF DIL28/SOIC28 SOIC28 330mil. com/pics/convert/con0145b com/pics/sop-soic/soic28-330m SOIC-28

    AS6C6264

    Abstract: 6264 SRAM AS6C6264-55PCN SRAM 6264
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


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    PDF AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, 6264 SRAM AS6C6264-55PCN SRAM 6264

    BS62UV256

    Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
    Text: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns


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    PDF BS62UV256 150ns 100ns BS62UV25rature R0201-BS62UV256 BS62UV256 BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI

    AS6C62256-55PCN

    Abstract: AS6C62256-55SIN AS6C62256
    Text: February 2007 AS6C62256 32K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


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    PDF AS6C62256 28-pin AS6C62256 144-bit 02/FEB/07, AS6C62256-55PCN AS6C62256-55SIN

    GLT6200L080LLI-70ST

    Abstract: No abstract text available
    Text: GLT6200L08/M08/N08 ADVANCED 256K x 8 Super Low Power & Low Voltage SRAM FEATURES ◆ Organization: 256K x 8 ◆ Low Data Retention Voltage: 1.5 V min ◆ Power Supply Voltage ◆ Maximum 2 µA Standby Current ◆ Three-state output status and TTL compatible


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    PDF GLT6200L08/M08/N08 32-Pin 32-Pin GLT6200L08: GLT6200M08: GLT6200N08: 256Kx8 GLT6200L/LI GLT6200L080LLI-70ST

    44-PIN

    Abstract: M48T129V M48T129Y
    Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and


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    PDF M48T129Y M48T129V 32-pin M48T129Y: M48T129V: 44-PIN M48T129V M48T129Y

    M48T35Y

    Abstract: M48T35 SOH28
    Text: M48T35 M48T35Y 5.0V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


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    PDF M48T35 M48T35Y 28-pin M48T35: M48T35Y: PCDIP28 M48T35Y M48T35 SOH28

    M41ST84W

    Abstract: M41ST84Y M4TXX-BR12SH SOH28 KDS Crystals 8.192
    Text: M41ST84Y M41ST84W 5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS FEATURES SUMMARY • 5.0 OR 3.0V OPERATING VOLTAGE I2C Figure 1. 16-pin SOIC Package ■ SERIAL INTERFACE SUPPORTS (400 KHz) BUS ■ OPTIMIZED FOR MINIMAL INTERCONNECT TO MCU


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    PDF M41ST84Y M41ST84W 16-pin M41ST84Y: M41ST84W: M41ST84W M41ST84Y M4TXX-BR12SH SOH28 KDS Crystals 8.192

    M48T59

    Abstract: M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28
    Text: M48T59 M48T59Y/M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION ■


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    PDF M48T59 M48T59Y/M48T59V* M48T59: M48T59Y: M48T59V* 28-pin M48T59 M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28

    M48T212V

    Abstract: M48T212Y M4TXX-BR12SH MTD20P06HDL SOH44
    Text: M48T212Y M48T212V 5.0V OR 3.3V TIMEKEEPER SUPERVISOR FEATURES SUMMARY • INTEGRATED REAL TIME CLOCK, POWERFAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ CONVERTS LOW POWER SRAM INTO NVRAMs ■ YEAR 2000 COMPLIANT 4-Digit Year ■ BATTERY LOW FLAG ■ MICROPROCESSOR POWER-ON RESET


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    PDF M48T212Y M48T212V M48T212Y: M48T212V: 44-LEAD 44-pin M48T212V M48T212Y M4TXX-BR12SH MTD20P06HDL SOH44

    AN1572

    Abstract: M41T94 M4TXX-BR12SH SOH28 ST10
    Text: M41T94 Serial Real Time Clock with 44Bytes NVRAM and Reset Feature summary • Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century ■ 32KHz crystal oscillator integrating load capacitance 12.5pF providing exceptional


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    PDF M41T94 44Bytes 32KHz AN1572 M41T94 M4TXX-BR12SH SOH28 ST10

    M40Z300

    Abstract: M40Z300W M4ZXX-BR00SH SOH28
    Text: M40Z300 M40Z300W 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ CONVERTS LOW POWER SRAM INTO NVRAMs PRECISION POWER MONITORING AND POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE


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    PDF M40Z300 M40Z300W M40Z300: M40Z300W: M40Z300 M40Z300W M4ZXX-BR00SH SOH28

    RC64475

    Abstract: No abstract text available
    Text:                            ◆ Implements MIPS-III Instruction Set Architecture ISA 3.3V I/O ◆ Software compatible with entire RISController Series of Embedded Microprocessors


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    PDF RC64474 RC4640 RC64475 RC4650 128-pin 32-bit 208-pin 64-bit

    HY62WT08081E-DGC

    Abstract: HY62WT08081E HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI
    Text: HY62WT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Feb.05.2001 Preliminary 01 Revised - Change LL-Part Isb1 Limit @E.T/I.T, 4.5~5.5V : 15uA => 20uA


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    PDF HY62WT08081E 32Kx8bit HY62WT08081E HY62WT08081E-DGC HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI

    GLT4160L04

    Abstract: GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3
    Text: G -LINK GLT4160L04 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Nov 2001 Rev.3.2 Features : Description : ∗ ∗ ∗ ∗ The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160L04 offers page


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    PDF GLT4160L04 GLT4160L04 2048-cycle 300mil GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3

    4 pin crystal 1mhz oscillator of KDS

    Abstract: cei crystal oscillator clock M41T315V M41T315W M41T315Y M4TXX-BR12SH SOH28 KDS 1mhz oscillator KDS 32.768 KHz crystal for RTC
    Text: M41T315Y* M41T315V/W SERIAL ACCESS PHANTOM RTC SUPERVISOR FEATURES SUMMARY • 3.0V, 3.3V, OR 5V OPERATING VOLTAGE ■ REAL TIME CLOCK KEEPS TRACK OF TENTHS/HUNDREDTHS OF SECONDS, SECONDS, MINUTES, HOURS, DAYS, DATE OF THE MONTH, MONTHS, and YEARS ■ AUTOMATIC LEAP YEAR CORRECTION


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    PDF M41T315Y* M41T315V/W 16-pin M41T315Y: M41T315V: M41T315W: 4 pin crystal 1mhz oscillator of KDS cei crystal oscillator clock M41T315V M41T315W M41T315Y M4TXX-BR12SH SOH28 KDS 1mhz oscillator KDS 32.768 KHz crystal for RTC

    AN923

    Abstract: M48T35 M48T35Y SOH28
    Text: M48T35 M48T35Y 256 Kbit 32Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS ■ FREQUENCY TEST OUTPUT for REAL TIME


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    PDF M48T35 M48T35Y PCDIP28 SOH28 M48T35: M48T35Y: AN923 M48T35 M48T35Y SOH28

    M48T58

    Abstract: M48T58Y SOH28
    Text: M48T58 M48T58Y 64 Kbit 8Kb x8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS FREQUENCY TEST OUTPUT for REAL TIME


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    PDF M48T58 M48T58Y M48T58: M48T58Y: 28-LEAD M48T58 M48T58Y SOH28

    quartz kds

    Abstract: KDS 32. 768 KHZ crystal KDS 48 MHZ crystal oscillator KDS 8 MHZ crystal KDS Crystals 32.768 BR1225 BR1632 M41T56 SOH28 kds 2 pin crystal oscillator 4 MHz
    Text: M41T56 512 bit 64b x8 Serial Access TIMEKEEPER SRAM • 5V ±10% SUPPLY VOLTAGE ■ COUNTERS for SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY ■ YEAR 2000 COMPLIANT ■ SOFTWARE CLOCK CALIBRATION ■ AUTOMATIC POWER-FAIL DETECT and SWITCH CIRCUITRY


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    PDF M41T56 500nA 150mil SOH28 28-LEAD quartz kds KDS 32. 768 KHZ crystal KDS 48 MHZ crystal oscillator KDS 8 MHZ crystal KDS Crystals 32.768 BR1225 BR1632 M41T56 SOH28 kds 2 pin crystal oscillator 4 MHz

    1N5817

    Abstract: M40Z111 M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28
    Text: M 4 0 Z 111 M 4 0 Z 111V NVRAM CONTROLLER for up to TWO LPSRAM • CONVERT LOW POWER SRAMs into NVRAMs ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION when Vcc is OUT-OF-TOLERANCE ■ CHOICE of SUPPLY VOLTAGES and


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    PDF M40Z111 M40Z111V M40Z111: M40Z111V: 28-LEAD DES42 M40Z111, 1N5817 M4Z28-BR00SH1 M4Z32-BR00SH1 SOH28

    Untitled

    Abstract: No abstract text available
    Text: HY62256B-I Series “H Y U N D A I 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF HY62256B-I 05-11-MAY95 Mb75Dflfi HY62256BLP-I HY62256BLLP-I HY62256BU-I

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


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    PDF HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS

    M48Z35

    Abstract: M48Z35V M48Z35Y M4Z28-BR00SH1 SOH28
    Text: M48Z35 M48Z35Y, M48Z35V 256 Kbit 32Kb x 8 ZERO PO W ER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION ■ WRITE PROTECT VOLTAGES


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    PDF M48Z35 M48Z35Y, M48Z35V M48Z35: M48Z35Y: M48Z35V: 28-LEAD SOH28 PCDIP28 Fig11 M48Z35V M48Z35Y M4Z28-BR00SH1 SOH28