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    32TSOP Price and Stock

    BPM Microsystems Inc FSMR32TSOPA

    SOCKET MODULE, 32 PIN TSOP; B=12
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    DigiKey FSMR32TSOPA 1
    • 1 $1054.97
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    BPM Microsystems Inc FXASM32TSOP

    FXASM32TSOP Socket Card for BPM
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    DigiKey FXASM32TSOP 1
    • 1 $1539.97
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    BPM Microsystems Inc WX4ASM32TSOP

    WX4ASM32TSOP Socket Card for BPM
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    DigiKey WX4ASM32TSOP 1
    • 1 $349.97
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    BPM Microsystems Inc FASMR32TSOPA

    SOCKET MODULE, 32 PIN TSOP; B=12
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FASMR32TSOPA 1
    • 1 $1294.97
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    BPM Microsystems Inc FX4ASMR32TSOPB

    FX4ASMR32TSOPB Socket Card for B
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    DigiKey FX4ASMR32TSOPB 1
    • 1 $2129.97
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    32TSOP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    32TSOP Maxim Integrated Products PACKAGE RELIABILITY REPORT Original PDF

    32TSOP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6F2008S2E

    Abstract: K6F2008S2E-F
    Text: K6F2008S2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F2008S2E 256Kx8 K6F2008S2E-F

    T4 1060

    Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
    Text: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST29EE512 SST29EE512512Kb S71060 S71060-09-000 T4 1060 SST29EE512-70-4I-NHE 32-PIN SST29EE512

    K6R1008V1D

    Abstract: No abstract text available
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify


    Original     		PDF K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D

    SST39LF512

    Abstract: SST39LF010 SST39LF020 SST39LF040 SST39VF010 SST39VF020 SST39VF040 SST39VF512
    Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet


    Original     		PDF SST39LF512 SST39LF010 SST39LF020 SST39LF040 SST39VF512 SST39VF010 SST39VF020 SST39VF040 SST39LF/VF512 512Kb SST39LF040 SST39VF040

    SST39SF010A

    Abstract: SST39SF020A SST39SF040 A17-A3
    Text: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations


    Original     		PDF SST39SF010A SST39SF020A SST39SF040 S71147-05-000 SST39SF040 A17-A3

    K6R1004C1D

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.


    Original     		PDF K6R1004C1D 256Kx4 32-SOJ-400 K6R1004C1D

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    H 1061

    Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


    Original     		PDF SST29EE010 SST29VE010 SST29EE VE0101Mb SST29EE010 S71061 S71061-11-000 H 1061 SST29VE010 SST29EE010-90-4C-NH

    SST49LF020A

    Abstract: No abstract text available
    Text: 2 Mbit LPC Flash SST49LF020A SST49LF020A2Mb LPC Flash Data Sheet FEATURES: • LPC Interface Flash – SST49LF020A: 256K x8 2 Mbit • Conforms to Intel LPC Interface Specification 1.0 • Flexible Erase Capability – Uniform 4 KByte Sectors – Uniform 16 KByte overlay blocks


    Original     		PDF SST49LF020A SST49LF020A2Mb SST49LF020A: S71206-08-000 SST49LF020A

    A11 MARKING CODE

    Abstract: 32TSOP MR27T401E
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


    Original     		PDF

    39lf040

    Abstract: SST39VF010 SST39VF020 SST39VF040 SST39VF512 SST39LF010 SST39LF020 SST39LF040 SST39LF512
    Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet


    Original     		PDF SST39LF512 SST39LF010 SST39LF020 SST39LF040 SST39VF512 SST39VF010 SST39VF020 SST39VF040 SST39LF/VF512 512Kb 39lf040 SST39VF040 SST39LF040

    AMIC A49LF040TL

    Abstract: A49LF040TL A49LF004 A49LF040 lad1-24
    Text: A49LF040 4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory Preliminary Document Title 4 Mbit CMOS 3.3 Volt-only Low Pin Count Flash Memory Revision History History Issue Date 0.0 Initial issue February 17, 2004 0.1 Add Pb-Free package type August 20, 2004


    Original     		PDF A49LF040 4Mbit039 AMIC A49LF040TL A49LF040TL A49LF004 A49LF040 lad1-24

    SST29EE010

    Abstract: SST29EE010-70-4C-PHE transistor 1061 SST29VE010
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


    Original     		PDF SST29EE010 SST29VE010 SST29EE VE0101Mb SST29EE010 S71061 SST29EE010" SST29VE010" SST29EE010-70-4C-PHE transistor 1061 SST29VE010

    K6T4008V1B-VF70

    Abstract: Improved MF10 32-TSOP2-R
    Text: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    Original     		PDF K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B KM68V4000B K6T4008V1B KM68U4000B K6T4008U1B K6T4008V1B-VF70 Improved MF10 32-TSOP2-R

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L

    TSOP 173 g

    Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
    Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		PDF KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP 71b4142 DD23bST TSOP 173 g KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000AL KM684000ALI KM684000ALI-L

    8512A

    Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges


    OCR Scan     		PDF KM68512A 64Kx8 32-SOP, 32-TSOP 23b27 8512A A12C A15C KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND

    KM68U1000B

    Abstract: KM68V1000B
    Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 128Kx8 KM68V1000B 32-SOP, 32-TSOP

    MSM9888L

    Abstract: MSM9894AL MSM9894ALTA TSOPI32-P-820-0 your ats electronics
    Text: o #mmj§sps; 1 I I O K I Semiconductor Version 1.00, June 1998 Preliminary MSM9894AL 4 Megabit Serial Voice Flash Memory This document consists of 8 eight pages. GENERAL DESCRIPTION OKI MSM9894AL is an 8 M egabit Serial Voice Flash M em ory d esig n ed for use w ith OKI


    OCR Scan     		PDF MSM9894AL MSM9894AL MSM9888L 32-pin MSM9894ALTA TSOPI32-P-820-0 your ats electronics

    32-TSOP2-400F

    Abstract: altl
    Text: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Ststic RAM Low VoltQge Operstion FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :3«W(Typ.) L-Version 1.5« W(Typ.) LL-Version


    OCR Scan     		PDF KM68V4000AL/AL-L 120ns 18mW/1MHz KM68V4000ALG/ALG-L 32-SOP-525 KM68V4000ALT/ALT-L 32-TSOP2-400F KM68V4000ALR/ALR-L 32-TSOP2-4COR KM68V4000AL/AL-L altl

    KM6 II

    Abstract: SRAM sheet samsung KM616
    Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating


    OCR Scan     		PDF 256Kx16 256Kx16 44-TSOP KM6164000A KM6164000A KM6 II SRAM sheet samsung KM616

    Untitled

    Abstract: No abstract text available
    Text: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran­


    OCR Scan     		PDF KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO KM681002B/BLSJ 32-SOJ-300 KM681002B/BLT:

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
    Text: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		PDF KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 003bS17 KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L

    KM68V1002A

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM68V1002A-12 : 95mA (max.)


    OCR Scan     		PDF KM68V1002A KM68V1002A-12 KM68V1002A-15 KM68V1002A-17 KM68V1002A-20 KM681V002AJ 32-SOJ-400 KM68V1002AT 32-TSOP -400F KM68V1002A