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    KM6 II

    Abstract: SRAM sheet samsung KM616
    Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating


    OCR Scan     		PDF 256Kx16 256Kx16 44-TSOP KM6164000A KM6164000A KM6 II SRAM sheet samsung KM616

    altl

    Abstract: No abstract text available
    Text: Advanced CMOS SRAM KM6164000AL/AL-L 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. The KM6164000AL/AL-L is a 4,194,304-bit high speed • Low Power Dissipation Static Random Access Memory organized as 262,144


    OCR Scan     		PDF KM6164000AL/AL-L 256Kx16 KM6164000AL/AL-L 304-bit 6164000AL/AL-L KM6164he KM6164000ALT/ALT-L: 400mil 0D213G1 altl

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED KM6164000AL/AL-L CMOS SRAM 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55, 7 0 ,85ns Max. • Low Power Dissipation Standby (CMOS) : 500/'W(Typ.) L-Version 5^W(Typ.) LL-Version Operating : 165mW(max.) • Single 5 -1 0 % V power supply


    OCR Scan     		PDF KM6164000AL/AL-L 256Kx16 165mW KM6164000AL/L-L 304-bit l/09-l/0i6)

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED CMOS SRAM KM6164000AL/AL-L 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 55, 70, 85ns Max. • Low Power Dissipation Standby (CMOS) : 500,«W(Typ.) L-Version 5,«W(Typ.) LL-Version Operating : 165mW(max.) • Single 5 ± 1 0 % V power supply


    OCR Scan     		PDF KM6164000AL/AL-L 256Kx16 165mW KM6164000ALT/LT-L 44-TSOP2-4QOF KM6164000AL/L-L 304-bit I/O10 I/O16) 7Tb414H

    "30 pin simm"

    Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
    Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36


    OCR Scan     		PDF KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8Mx36 "30 pin simm" 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm

    SRAM256KX16

    Abstract: SRAM_256KX16
    Text: ADVANCED CM OS SRAM KM 6164000AL/AL-L 256K x16 B it CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 55, 70, 85ns Max. • Low Power Dissipation Standby (CMOS) : 500,«W(Typ.) L-Version 5,MW(Typ.) LL-Version Operating : 165mW(max.) • Single 5 ± 1 0 % V power supply


    OCR Scan     		PDF KM6164000AL/AL-L 256Kx16 165mW I/09-I/016 KM6164000ALT/LT- 44-TSOP2-400F KM6164000AL/L-L 304-bit KM6164000AL7L-L SRAM256KX16 SRAM_256KX16

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b

    Untitled

    Abstract: No abstract text available
    Text: KM6 1 6 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 urn CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V +/-10% Low Data Retention Voltage : 2V Min


    OCR Scan     		PDF 256Kx16 256Kx16 44-TSOP KM6164000A