Si3407DV
Abstract: No abstract text available
Text: New Product Si3407DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0240 at VGS = - 4.5 V - 8.0a 0.0372 at VGS = - 2.5 V a - 8.0 • • • • Qg (Typ.) 21 nC TrenchFET Power MOSFET PWM Optimized
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Si3407DV
Si3407DV-T1-E3
08-Apr-05
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SUM75N15-18P-E3
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUM75N15-18P
O-263
SUM75N15-18P-E3
08-Apr-05
SUM75N15-18P-E3
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Si6463BDQ
Abstract: No abstract text available
Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT
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Si6463BDQ
Si6459BDQ-T1-GE3
08-Apr-05
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72511
Abstract: Si6433BDQ
Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7
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Si6433BDQ
Si6433BDQ-T1-GE3
11-Mar-11
72511
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Untitled
Abstract: No abstract text available
Text: 4.5-10.5 GHz GaAs Receiver QFN, 4x4mm R1011-QH March 2008 - Rev 31-Mar-08 Features Integrated LNA, Mixer and LO Buffer Amplifier 1.8 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 4.5-10.5 GHz QFN packaged receiver has
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31-Mar-08
R1011-QH
XR1011-QH
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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MOSFET TSSOP-8
Abstract: SI6410DQ
Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D
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Si6410DQ
Si6410DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MOSFET TSSOP-8
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si6465
Abstract: No abstract text available
Text: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated
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Si6465DQ
Si6465DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si6465
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313B
Abstract: No abstract text available
Text: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC
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SUM110N04-2m1P
O-263
SUM110N04-2m1P-E3
11-Mar-11
313B
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Untitled
Abstract: No abstract text available
Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8
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Si6415DQ
Si6415DQ-T1
Si6415DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si6443DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 8.8 0.019 at VGS = - 4.5 V - 7.0 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Battery Switch
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Si6443DQ
Si6443DQ-T1-GE3
08-Apr-05
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SI6410DQ
Abstract: No abstract text available
Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D
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Si6410DQ
Si6410DQ-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC
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SUM110N04-2m1P
O-263
SUM110N04-2m1P-E3
11-Mar-11
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80681
Abstract: No abstract text available
Text: New Product SUP90N04-2m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0028 at VGS = 10 V 90 0.003 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC
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SUP90N04-2m8P
O-220AB
SUP90N04-2m8P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
80681
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Si6467BDQ
Abstract: No abstract text available
Text: Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 8.0 0.0155 at VGS = - 2.5 V - 7.0 0.020 at VGS = - 1.8 V - 6.0 • Halogen-free • TrenchFET Power MOSFETs Pb-free
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Si6467BDQ
Si6467BDQ-T1
Si6467BDQ-T1-GE3
18-Jul-08
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Si6404DQ
Abstract: No abstract text available
Text: Si6404DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 11 30 0.010 at VGS = 4.5 V 10 0.014 at VGS = 2.5 V 8.8 • Halogen-free • TrenchFET Power MOSFETS: 2.5 V Rated • 30 V VDS RoHS
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Si6404DQ
Si6404DQ-T1-GE3
18-Jul-08
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Si6466ADQ
Abstract: No abstract text available
Text: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D
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Si6466ADQ
Si6466ADQ-T1-GE3
18-Jul-08
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S8060
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix MICRO FOOT 3 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT 4.00 ± 0.10 4.00 ± 0.10 + 0.10 Ø 1.50 - 0.00 A 2.00 ± 0.05 B B 1.75 ± 0.1 3.5 ± 0.05 0.30 8.0 +- 0.10 SECTION A-A A SECTION B-B Notes 1. 10-sprocket hole pitch cumulative tolerance ± 0.2.
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10-sprocket
93-5211-x)
92-5210-x)
S-80609-Rev.
31-Mar-08
93-5229-x
S8060
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80681
Abstract: c312a sup90n04-2m8p
Text: New Product SUP90N04-2m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0028 at VGS = 10 V 90 0.003 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC
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SUP90N04-2m8P
O-220AB
SUP90N04-2m8P-E3
18-Jul-08
80681
c312a
sup90n04-2m8p
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Si6410DQ
Abstract: No abstract text available
Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D
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Si6410DQ
Si6410DQ-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC
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SUM110N04-2m1P
O-263
SUM110N04-2m1P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6404DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 11 30 0.010 at VGS = 4.5 V 10 0.014 at VGS = 2.5 V 8.8 • Halogen-free • TrenchFET Power MOSFETS: 2.5 V Rated • 30 V VDS RoHS
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Si6404DQ
Si6404DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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11SM701-T
Abstract: TWY2000 rj 06
Text: F O -5 5 1 1 1 -A HONEYWELL P A RT NUMBER REV 8 DOCUMENT 0038442 CHANGED SSK BY 31MAR08 CHECK BLR 11SM701-T PRODUCT CODE TWY2000 .046 B SPHERICAL RADIUS .092 OIA NOTE — ¿^-MOUNTING HOLES WILL ACCEPT PINS OR SCREWS OF .0 07 MAX OIA ON .375 ± .0 0 2 CENTERS
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31MAR08
11SM701-T
TWY2000
0l0h-H--26<
X38169
FORCE--56
FORCE----14
5M-1982
11SM701-T
TWY2000
rj 06
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Untitled
Abstract: No abstract text available
Text: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER PLAST IC PLUNGER REV DOCUMENT 8 0038442 CHANGED SSK BY 31MAR08 CHECK BLR 11SM701-H58 PRODUCT CODE TWY1990 •296 ± .010 .0 2 0 MAX PR ETRAVEL B ,I5 6 ± .0 I0 DIA-*- B "♦ 1 .33 OPERATING P O SI TI O N 1 _ t-.0 9 4 f.0 l0
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FO-55111-A
11SM701-H58
31MAR08
J088I
FORCE--56
FORCE----14
5M-1982
11SM701-H
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