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    SI6466ADQ Search Results

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    SI6466ADQ Price and Stock

    Vishay Siliconix SI6466ADQ-T1-E3

    MOSFET N-CH 20V 6.8A 8TSSOP
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    DigiKey SI6466ADQ-T1-E3 Reel
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    Quest Components SI6466ADQ-T1-E3 7
    • 1 $1.35
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    SI6466ADQ-T1-E3 7
    • 1 $1.35
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    Vishay Siliconix SI6466ADQ-T1-GE3

    MOSFET N-CH 20V 6.8A 8TSSOP
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    DigiKey SI6466ADQ-T1-GE3 Reel
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    Vishay Intertechnologies SI6466ADQ-T1-E3

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    Bristol Electronics SI6466ADQ-T1-E3 4,746
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    Quest Components SI6466ADQ-T1-E3 3,796
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    SI6466ADQ-T1-E3 3,796
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    Vishay Intertechnologies SI6466ADQT1GE3

    N-CHANNEL 2.5-V (G-S) MOSFET Small Signal Field-Effect Transistor, 6.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI6466ADQT1GE3 1,545
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    SI6466ADQ Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si6466ADQ Vishay Intertechnology N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI6466ADQ Vishay Siliconix MOSFETs Original PDF
    SI6466ADQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI6466ADQ-T1 Vishay Intertechnology N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI6466ADQ-T1 Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI6466ADQ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6.8A 8TSSOP Original PDF
    SI6466ADQ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6.8A 8TSSOP Original PDF

    SI6466ADQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6466ADQ

    Abstract: S-00984
    Text: Si6466ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6466ADQ * Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6466ADQ S-00984--Rev. 15-May-00 S-00984

    Untitled

    Abstract: No abstract text available
    Text: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D


    Original     		PDF Si6466ADQ Si6466ADQ-T1-GE3 08-Apr-05

    0715

    Abstract: AN609 Si6466ADQ
    Text: Si6466ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si6466ADQ AN609 29-Jun-07 0715

    Si6466ADQ

    Abstract: No abstract text available
    Text: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D


    Original     		PDF Si6466ADQ Si6466ADQ-T1-GE3 18-Jul-08

    Si6466ADQ

    Abstract: Si6466ADQ-T1
    Text: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6466ADQ Si6466ADQ-T1 S-31725--Rev. 18-Aug-03

    74232

    Abstract: Si6466ADQ Si6466ADQ-T1 Si6466DQ Si6466DQ-T1
    Text: Specification Comparison Vishay Siliconix Si6466ADQ vs. Si6466DQ Description: Package: Pin Out: N-Channel, 2.5 V G-S MOSFET TSSOP-8 Identical Part Number Replacements Si6466ADQ-T1-E3 Replaces Si6466DQ-T1-E3 Si6466ADQ-T1 Replaces Si6466DQ-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si6466ADQ Si6466DQ Si6466ADQ-T1-E3 Si6466DQ-T1-E3 Si6466ADQ-T1 Si6466DQ-T1 74232

    Si6466ADQ

    Abstract: Si6466ADQ-T1
    Text: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6466ADQ Si6466ADQ-T1 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si6466ADQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 ID (A) 0.014 at VGS = 4.5 V 8.1 0.020 at VGS = 2.5 V 6.6 • Halogen-free • TrenchFET Power MOSFETs • 100 % Rg Tested RoHS COMPLIANT D TSSOP-8 D


    Original     		PDF Si6466ADQ Si6466ADQ-T1-GE3 15llectual 18-Jul-08

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3