SI1443EDH
Abstract: marking code bt S1209
Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET
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Si1443EDH
SC-70
Si1443EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code bt
S1209
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si8406
Abstract: No abstract text available
Text: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management
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PDF
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Si8406DB
Si8406DB-T2-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si8406
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Untitled
Abstract: No abstract text available
Text: SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 Qg (Typ.) 7.6 nC PowerPAK SC-75-6L-Single • TrenchFET Power MOSFET
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SiB433EDK
SC-75-6L-Single
SC-75
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET
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PDF
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Si1443EDH
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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S1209
Abstract: SiS890DN
Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm
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SiS890DN
SiS890DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S1209
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SiB433EDK
Abstract: No abstract text available
Text: SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 Qg (Typ.) 7.6 nC PowerPAK SC-75-6L-Single • TrenchFET Power MOSFET
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Original
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PDF
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SiB433EDK
SC-75-6L-Single
SC-75
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR818ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0025 at VGS = 10 V 50 0.0030 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 39 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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SiR818ADP
SiR818ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V
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SiZ920DT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 CHARACTERISTICS: MATERIAL: COLOR: BLACK OPERATING TEMPERATURE: -20°C UP TO 80°C COMPLIANCE: LEAD FREE AND ROHS A PACKAGING: 10PCS/BAG WIRE DIMENSION: AWG: 20 Terminal B Terminal A B Wire Length 123,82300mm* Terminal A Terminal B RoHS Compliant
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10PCS/BAG
300mm*
30-APR-12
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Untitled
Abstract: No abstract text available
Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET
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PDF
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Si1443EDH
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si3442CDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 a RDS(on) () Max. ID (A) 0.027 at VGS = 10 V 8d 0.030 at VGS = 4.5 V 7.5 0.049 at VGS = 2.5 V 6.1 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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Si3442CDV
Si3442CDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: PBT FLAMMABILITY RATING UL94-V0 COLOUR: PURPLE AND GREEN CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 500 MATING CYCLES
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UL94-V0
E323964
631-Dual
30-APR-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 85°C
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UL94-V0
E323964
22-AGU-12
30-APR-12
25-OCT-11
20-SEP-11
18-APR-11
01-SEP-10
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Untitled
Abstract: No abstract text available
Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)
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SiHP17N60D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 85°C
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UL94-V0
E323964
30-APR-12
25-OCT-11
20-SEP-11
18-APR-11
01-SEP-10
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JTF1524S05
Abstract: JTF1024S05 JTF10 JTF1548S3V3
Text: DC DC 8 15 Watts xppower.com JTF Series • High Power Density • Wide 4:1 Input Range • Operating Temperature 40 º C to +105 º C • Single & Dual Outputs • Standard Remote On/Off • 1600 VDC Isolation • 3 Year Warranty Specification Input Input Voltage Range
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JTF15,
30-Apr-12
JTF1524S05
JTF1024S05
JTF10
JTF1548S3V3
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Untitled
Abstract: No abstract text available
Text: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management
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Original
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PDF
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Si8406DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)
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Original
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PDF
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SiHP17N60D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm
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Original
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PDF
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SiS890DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 Qg (Typ.) 7.6 nC PowerPAK SC-75-6L-Single • TrenchFET Power MOSFET
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Original
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PDF
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SiB433EDK
SC-75-6L-Single
SC-75
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm
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Original
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PDF
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SiS890DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)
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Original
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PDF
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SiHP17N60D
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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63916
Abstract: S1209
Text: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V
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SiZ920DT
SiZ920DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
63916
S1209
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Untitled
Abstract: No abstract text available
Text: This is issued in strict confidence on condition that it is not used as a basis for manufacture or sale, and that it is not copied, A ±0,38 .015 B ± 0,13 (.005) C ±0,13 (.005) D ± 0,13 (.005) E ± 0,38 (.015) L ± 0,25 (.010) W ± 0,41 (.016) K ± 0,25 (.010)
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OCR Scan
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30-Apr-12
21WA4
DCMM21WA4PD
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