KTB688B
Abstract: KTD718
Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25
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KTB688B
KTD718B.
KTB688B
KTD718
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KTD998
Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃
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KTD998
KTB778.
200x200x2mm
100x100x2mm
300x300x2mm
KTD998
transistor ktD998
KTD998 transistor
KTB778
KTb778 datasheet
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transistor ktd718
Abstract: KTB688 KTD718
Text: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD718. C ᴌRecommended for 45ᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ
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KTB688
KTD718.
100x100x2mm
transistor ktd718
KTB688
KTD718
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ktd718
Abstract: ktd718 datasheet transistor ktd718 KTB688
Text: SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage. G J H ᴌComplementary to KTB688. L D MAXIMUM RATING Ta=25ᴱ
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KTD718
KTB688.
100mS
300x300x2mm
200x200x2mm
100x100x2mm
ktd718
ktd718 datasheet
transistor ktd718
KTB688
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al205
Abstract: KTA1036 KTC2016
Text: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING
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KTC2016
KTA1036.
al205
KTA1036
KTC2016
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD718. C Recommended for 45 50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 d CHARACTERISTIC
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KTB688
KTD718.
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTD718B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTB688B. D E L MAXIMUM RATING Ta=25
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KTD718B
KTB688B.
100mS
300x300x2mm
200x200x2mm
100x100x2mm
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KTB778
Abstract: transistor ktb778 KTD998 KTB778 transistor KTb778 datasheet common emitter amplifier transistor ktD998 IC 545 305
Text: SEMICONDUCTOR KTB778 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Complementary to KTD998. W F U E ・Recommended for 45～50W Audio Frequency W V M I K N D J L S T B G Amplifier Output Stage. MAXIMUM RATING Ta=25℃
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KTB778
KTD998.
100ms
500ms
KTB778
transistor ktb778
KTD998
KTB778 transistor
KTb778 datasheet
common emitter amplifier
transistor ktD998
IC 545 305
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KTB988
Abstract: KTD1351 2.T transistor planar
Text: SEMICONDUCTOR KTB988 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. P Q D B ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ).
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KTB988
KTD1351.
KTB988
KTD1351
2.T transistor planar
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KTD2058
Abstract: KTD2058 DATASHEET KTB1 KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. G ᴌComplementary to KTB1366. R T L K L MAXIMUM RATING (Ta=25ᴱ) J RATING UNIT Collector-Base Voltage
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KTD2058
KTB1366.
O-220IS
KTD2058
KTD2058 DATASHEET
KTB1
KTD2058 Y
KTB1366
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ktc2036
Abstract: 200X200X2mm
Text: SEMICONDUCTOR KTC2036 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES ・Low Collector Saturation Voltage : VCE sat =1.0V(Max) at IC=2A, IB=0.2A MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO 80 V VCEO
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KTC2036
ktc2036
200X200X2mm
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KTD718B
Abstract: KTB688B
Text: SEMICONDUCTOR KTD718B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTB688B. D E L MAXIMUM RATING Ta=25
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KTD718B
KTB688B.
100mS
300x300x2mm
200x200x2mm
100x100x2mm
KTD718B
KTB688B
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KTD2058
Abstract: KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES ・Low Saturation Voltage C P : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. E K G B ・Complementary to KTB1366. L L MAXIMUM RATING (Ta=25℃) RATING UNIT
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KTD2058
KTB1366.
O-220IS
KTD2058
KTD2058 Y
KTB1366
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Untitled
Abstract: No abstract text available
Text: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.
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2SC519A
2SC520A
2SC521A
00D7L
2SC519A)
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KTA1036
Abstract: KTC2016
Text: SEMICONDUCTOR TECHNICAL DATA KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=_2A, Ib=_0.2A. • Complementary to KTC2016. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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KTA1036
KTC2016.
220AB
300x300x2mm
200x200x2mm
100x100x1mm
50x50xlmm
KTA1036
KTC2016
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KTB989
Abstract: KTD1352
Text: SEMICONDUCTOR TECHNICAL D A TA KTB989 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. itBFh p in FEATURES • Good Linearity of Iife• Complementary to KTD1352. DIM M ILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage
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KTB989
KTD1352.
220AB
50x50x2mm
50x50xlmm
D50x50xlmm
KTB989
KTD1352
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2SC519A
Abstract: 521A 2SC520a 2SC521A 2sc5 520a
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC519A,520A, 521A POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES : • High Voltage : VCBO=130V 2SC519A ,Vc e o =110V(2SC519A) 02S.OMAX.
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2SC519A
2SC519A)
2SC520A
2SC521A
VCC-30V
2SC519A,
521A
2SC521A
2sc5
520a
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2sb688
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 0 3.2±0.2 FEATURES: . Complementary to 2SD718. V- . Recommended for AS'-SOW audio frequency amplifier output stage. ft n r + 0.3 0 1.0 — a 2 5 MAXIMUM RATINGS Ta=25°c
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2SB688
2SD718.
Tc-25
300X300x2mmA/
2sb688
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation
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KTB988
KTD1351.
50x50xlmm
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Untitled
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA Sb <DI S C R E TE /O P TO dF J t GT75SD 000777^ D o t - 3 y~/ 3 56C 07779 SILIC O N NPN T R IP LE D IFFU SED TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. / , 2.0 FEATURES: . Complementary to 2SB688.
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GT75SD
2SB688.
300X300X2m
300X300X8m
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Untitled
Abstract: No abstract text available
Text: Sk “TOSHIB A -CDISCKLTL/OH IÖ F 9097250 T O S H IB A D IS C R E T E /O P T O 2SA1328 TO TT SS D D00731b 56C 073L6 D 7 " - 3 _ SILICON PNP EPITAXIA L TYPE (PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1 Q 3 M A X . 0 3 .6 ± 0.2 FEATURES:
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2SA1328
D00731b
073L6
2SC3345
300X300X2mm
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2SD111
Abstract: 2SD110 2SD1100 D-111 transistor 2SD110-0 2SD110-Y 2sd1102 sd111
Text: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR 23D y+ s*n O O do - D O ay^ -iS 1 Is I i ffl o * * *• v-tm A ud io Power A m p li f ie r , Power S w itc h in g DC - DC C o n v e rte r and R e g u la t o r A p p l i c a t i o n * , • • • = a is ? K W E -e -f
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2SD110
2SD111
28D110
00X200X2m
00X300X2m
2SD111
2SD1100
D-111 transistor
2SD110-0
2SD110-Y
2sd1102
sd111
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2SC519A
Abstract: 2SC520a 2SA656A
Text: SILICON PNP TRIPLE DIFFUSED MESA TYPE 2SA656A,657A,658A INDUSTRIAL APPLICATIONS POWER AMPL I F I E R APPLICATIONS. P OWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES: . High Voltage : Vcjjo=~130V, VcEO=~ H O V 2SA656A
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2SA656A
2SA656A)
2SC519A,
2SC520A
2SC521A.
2SA657A
2SA658A
2SC519A
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KTC2026
Abstract: KTA1046 transistor ktA1046
Text: _ SEMICONDUCTOR KTC2026 TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE Sat =1.0V(Max.) (IC=2A, IB=0.2A). • Complementary to KTA1046. MAXIMUM RATINGS (Ta=25°C)
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KTC2026
KTA1046.
220IS
KTC2026
KTA1046
transistor ktA1046
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