VP2204N3
Abstract: VP2204 VP2210 VP2206N3
Text: VP 22A G ì Super te x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss •' ^DS O N b v dgs (max) If Standard Commercial Devices 40V 0.9Q -4A VP2204N3 VP2204ND 60V 0.9Q -4A VP2206N3 VP2206ND -100V 0.9Î2 -4A VP2210N3 VP2210ND
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VP2204N3
VP2206N3
VP2210N3
VP2204ND
VP2206ND
VP2210ND
-100V
300jas
VP2204
VP2210
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VN1304N3
Abstract: VN1310N3
Text: inc. V N 13A N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV Dss / R d S ON ' d (ON) BVdgs (max) (min) TO-39 TO-92 40V 8£2 0.5A VN1304N2 VN1304N3 60V 8£2 0.5A VN1306N2 VN1306N3 100V
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VN1304N2
VN1306N2
VN1310N2
VN1304N3
VN1306N3
VN1310N3
VN13A
VN1310N3
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2SC3447
Abstract: 200T FR57 25C312 1545B
Text: Ordering number:EN 1545B 2SC3447 NPN Triple Diffused Planar Silicon Transistor F or S w i t c h i n g Re g u l a t o r s Featrues - High breakdown voltage and high reliability • Fast switching speed tf: O.lps typ. • Wide ASO • Adoption of MBIT process
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1545B
2SC3447
2SC3447
200T
FR57
25C312
1545B
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Untitled
Abstract: No abstract text available
Text: MBR2535CT THRU MBR2560CT SCHOTTKY RECTIFIER Reverse Voltage 35 to 60 Volts Forward Current - 30.0 Amperes - FEATURES TO-22QAB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap
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MBR2535CT
MBR2560CT
O-22QAB
O-220AB
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LT 3852
Abstract: X2816C X2816CI c 3852 Scans-00120002
Text: « K X 2Ô 16C 16K 2048 X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Tim e • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms
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640ms
X2816C
120ns
150ns
200ns
24-Lead
32-Lead
32-Pad
LT 3852
X2816C
X2816CI
c 3852
Scans-00120002
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mt5300
Abstract: No abstract text available
Text: ^ S u p e rte x me. DN2535 DN2540 Low Thresh old Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information O rder Num ber / Package b v dsx/ ^D S O N b v dgx (m ax) '□ss (m in) TO-39 TO-92 TO -220 TO -243AA* DIE 350V 250 150mA DN2535N2
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DN2535
DN2540
150mA
150mA
DN2535N2
DN2540N2
DN2535N3
DN2540N3
DN2535N5
DN2540N5
mt5300
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Untitled
Abstract: No abstract text available
Text: ^ Su perte x inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ BV dgs Order Number / Package R DS ON ^G S (th) (max) (max) TO-92 10 ÌÌ 2.0V VN2010L 200V Features Advanced DMOS Technology Li These enhancement-mode (normally-off) transistors utilize a
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VN2010L
300jas
00D43DÃ
250mA
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Untitled
Abstract: No abstract text available
Text: «Bf X2816C 16K 2048 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Tim e • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms
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X2816C
640ms
300jas
120ns
150ns
200ns
24-Lead
32-Lead
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Untitled
Abstract: No abstract text available
Text: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Switches Medium-Power A m plifiers FEMURS: • •
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2N3766
2N3740)
300jaS,
MSC1039
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Untitled
Abstract: No abstract text available
Text: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Switches Medium-Power A m plifiers FEMURS: • •
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2N3741A
300jaS,
MSC1042
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QM6001
Abstract: No abstract text available
Text: OM6001ST OM6003ST OM6101ST OM61Û3ST OM6002ST QM6004ST OM61Q2ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 1 0 0 V T h r u 500V, Up To 14 A m p . N - C h a n n e l M O S F E T W it h Or W i t h o u t Z e n e r G a te C l a m p P r o t e c ti o n
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OM6001ST
OM6003ST
OM6101ST
OM6002ST
QM6004ST
OM61Q2ST
OM61Q4ST
O-257AA
MIL-S-19500,
QM6001
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN0120 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ R d S ON I d (ON) b v dgs (max) (min) TO-39 TO-92 Dle^ 200V 10C1 0.4A VN0120N2 VN0120N3 VN0120ND ' M IL v is u a l s c re e n in g a v a ila b le
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VN0120
VN0120N2
VN0120N3
VN0120ND
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BV 726 C
Abstract: BV 724 C
Text: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BVDGS Order Number / Package DS ON '□(ON) (max) (min) VGS(ttl) (max) TO-92 SO-8 Die 1.5U -1.25A -1.0V LP0701N3 LP0701LG LP0701ND D -16.5V Features Advanced MOS Technology
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LP0701
LP0701N3
LP0701LG
LP0701ND
BV 726 C
BV 724 C
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Untitled
Abstract: No abstract text available
Text: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Sw itches M edium -Pow er A m p lifie rs FEMURS:
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2N3767
2N3741)
300jaS,
MSC1041
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Untitled
Abstract: No abstract text available
Text: ^ S u p ertex inc. T N 06D L ow T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS/ ^DS O N *D(ON) ^G S (th ) b v dgs (max) (min) (max) TO-92 DICE+ 350V 10Q 1.0A 1.8V TN0635N3 TN0635ND 400V 10£2
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TN0635N3
TN0640N3
TN0635ND
TN0640ND
TN06D
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package b v dsx/ ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.
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LND150
O-243AA*
LND150N3
LND150N8
LND150ND
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Untitled
Abstract: No abstract text available
Text: ^ Superte x inc. VQ2001 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BVdss/ R d S ON b v dgs (max) (min) Quad Ceramic DIP* -30V 2.0Q -1.5A VQ2001P ' d (ON) * 14-pin side-brazed ceramic DIP. Advanced DMOS Technology
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VQ2001
VQ2001P
14-pin
300jas
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Untitled
Abstract: No abstract text available
Text: SBL1630CT AND SBL1640CT SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts Forward Current - 16.0 Amperes FEATURES TO-22QAB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction
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SBL1630CT
SBL1640CT
O-22QAB
O-220AB
SBL163QCT
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IRF250R
Abstract: free IR circuit diagram
Text: [ 2 H A R R I S IR F 2 5 0 /2 5 1 /2 5 2 /2 5 3 IR F 2 5 0 R /2 5 1 R /2 5 2 R /2 5 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 4 A E BOTTOM VIEW • 25A and 30A, 150V - 200V • ros on = 0 .0 8 5 fl and 0 .1 2 0 fi
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IRF250,
IRF251,
IRF252,
IRF253
IRF250R,
IRF251R,
IRF252R,
IRF253R
RE14b.
IRF250R
free IR circuit diagram
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BUV41
Abstract: 7D transistor
Text: SGS-THOMSON BUV41 FAST SWITCHING POWER TRANSISTOR • FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA TION ABSOLUTE MAXIMUM RATINGS Symbol > a > o o > V Param eter Collector-emitter Voltage
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BUV41
BUV41
7D transistor
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Untitled
Abstract: No abstract text available
Text: Dual N-Channel JFET Switch calocflc CORPORATION \J U401-U406 A B S O L U T E M A X IM U M R A T IN G S T a = 2 5 °C unle ss o th e rw ise specifie d F E A TU R E S • • • • M in im u m S y s te m Erro r an d C alib ra tio n Lo w D rift W ith Tem p e ra tu re
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U401-U406
200nA
300jas;
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Untitled
Abstract: No abstract text available
Text: MBR2535CT THRU MBR2560CT SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES TO-22QAB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap
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OCR Scan
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PDF
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MBR2535CT
MBR2560CT
O-22QAB
O-220AB
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Untitled
Abstract: No abstract text available
Text: «Bf X2804C 4K 5 1 2 x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • 90ns Access Time • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms
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OCR Scan
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PDF
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X2804C
640ms
300jas
150ns
200ns
250ns
24-Lead
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1rfk2d250
Abstract: IRFK2D250 IRFK2F250
Text: Bulietin E2792 International « R e c tifie r IRFK2D250,IRFK2F250 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • High Current Capability. • UL recognised E78996. • Electrically Isolated Base Plate. • Easy Assembly into Equipment.
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E2792
IRFK2D250
IRFK2F250
E78996.
T0-240
IRFK2D250JRFK2F250
1rfk2d250
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