300 V 2 A MOSFET Search Results

300 V 2 A MOSFET Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

300 V 2 A MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXGH40N30 Abstract: high current igbt Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 V CES ^C25 V CE sat trfl >c — 300 60 2.4 75 V A V ns G (if »E Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C v* CGR T, = 2 5 ° C to 1 5 0 "C; R V GES Maximum Ratings 300 V 300 V Continuous i2 0 V V GEM Transient	OCR Scan	IXGH40N30BD1 O-247 IXGH40N30 high current igbt	PDF
starter/generator Abstract: D-68623 mosfet Vds 50 Vgsth Text: Advanced Technical Information FMM 300-0055P ID25 Trench Power MOSFET VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM = 300 A = 55 V Ω = 2.7 mΩ 3 T1 5 4 1 T2 1 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 55 V ±20 V ID25	Original	300-0055P Qg03-0, 300-0055P starter/generator D-68623 mosfet Vds 50 Vgsth	PDF
75NF30 Abstract: stw75nf30 JESD97 Text: STW75NF30 N-channel 300 V, 0.037 Ω, 60 A, TO-247 low gate charge STripFET Power MOSFET Features Type VDSS RDS on max ID pW STW75NF30 300 V < 0.045 Ω 60 A 320 W • Exceptional dv/dt capability ■ Low gate charge ■ 100% Avalanche tested 2 1 Application	Original	STW75NF30 O-247 75NF30 stw75nf30 JESD97	PDF
Untitled Abstract: No abstract text available Text: ÏXYS HiPerFAST IGBT IXGH20N30 VCES C25 VCE sat typ t fi(typ) Symbol Test Conditions V T j = 2 5 °C to 150°C Maximum Ratings 300 V 300 V Continuous +20 V Transient 130 V T,J = 2 5 °C to 150J C; FLO 1 M fi Tc -2 5 C 40 A ^C9G T c = 90° C 20 A ^CM T c = 25° C, 1 ms	OCR Scan	IXGH20N30 O-247	PDF
Untitled Abstract: No abstract text available Text: FMM 300-0055P ID25 = 300 A = 55 V VDSS Ω RDSon typ. = 2.7 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data T1 5 4 1 1 T2 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 55 V ±20 V ID25 ID90	Original	300-0055P	PDF
Untitled Abstract: No abstract text available Text: L7987L 61 V 2 A asynchronous step-down switching regulator with adjustable current limitation Datasheet - preliminary data Description HTSSOP16 RTH = 40 °C/W Features • 2 A DC output current  4.5 V to 61 V operating input voltage  RDS,ON = 300 m typ.	Original	L7987L HTSSOP16 L7987L DocID026362	PDF
Untitled Abstract: No abstract text available Text: 2N7002K Vishay Siliconix New Product N-Channel 60-V D-S MOSFET TrenchFET MOSFET PRODUCT SUMMARY Vds(V) r DS<on) 60 (Q) Id ( m A ) 2 V gs = 10V ESD Protected 300 2000 V FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Direct Logic-Level Interface: TTL7CM0S	OCR Scan	2N7002K O-236 OT-23 2N7002 S-02464--Rev. 25-Oct-OO S-02464-- 25-Oct-00	PDF
DSEE29-06CC Abstract: 486 smps Text: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 600 300 ISOPLUS 220 E153432 Type DSEE29-06CC 1 2 3 Isolated back surface* Symbol Conditions	Original	DSEE29-06CC ISOPLUS220TM E153432 9-03A DS98815A ISOPLUS220 728B1 065B1 DSEE29-06CC 486 smps	PDF
si6306 Abstract: DPG30P300PJ Text: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 600 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 600 300 ISOPLUS 220 E153432 Type DSEE29-06CC 1 2 3 Isolated back surface* Maximum Ratings	Original	DSEE29-06CC ISOPLUS220TM E153432 9-03A 20080317a ISOPLUS220 728B1 065B1 si6306 DPG30P300PJ	PDF
Untitled Abstract: No abstract text available Text: TAIW AN s TSM2N70Û2 SEMICONDUCTOR 60V N-Channei MOSFET bl RoHS COMPLIANCE SOT-23 PRODUCT SUM M ARY P in D e fin itio n : 1. Gate V DS V 2 . S o u rc e 3 . D ra in 1 60 2 Features RDS(on){Q) I d (m A ) 7.5 @ Vas - 10V 300 7.5 @ V Gs= 4.5V 200 Block Diagram	OCR Scan	TSM2N70 OT-23 TSM2N7002CX OT-23	PDF
isoplus mosfet Abstract: 12V 200A Relay DA QG solar inverter solar inverter circuit starter/generator Text: FMM 300-0055P ID25 = 300 A = 55 V VDSS Ω RDSon typ. = 2.7 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data T1 5 4 1 1 T2 2 5 Features TVJ = 25°C to TVJmax 55 VGS TC = 25°C TC = 90°C IF25 IF90 body diode TC = 25°C (body diode) TC = 90°C	Original	300-0055P isoplus mosfet 12V 200A Relay DA QG solar inverter solar inverter circuit starter/generator	PDF
Untitled Abstract: No abstract text available Text: SIEMENS IL420 600 V TRIAC DRIVER OPTOCOUPLER FEATURES a • • • • High Input Sensitivity 1 ^ 2 mA Blocking Voltage, 600 V 300 mA On-State Current High Static dv/dt 10,000 V t\a Inverse Parallel SCR« Provide Commutating dv/dt >2K V/\|i* • Very Low Leakage <10 \iA	OCR Scan	IL420 E52744 lF/iFT25 IL420	PDF
ic 501 Abstract: 1l410 triac triac 1f 1L410 OPTOCOUPLER trigger thyristor scr triac varistor Text: SIEMENS IL410 ZERO VOLTAGE CROSSING 600 V TRIAC DRIVER OPTOCOUPLER * * * * * * * * * a * On-State Current, 300 mA Zero Voltage C rossing Blocking Voltage, 600 V Isolation Test Voltage from Double Molded Package, 5300 VACnus High Input Sensitivity ln =2 mA, PF=1.0	OCR Scan	E52744 -X001 IL410 IL410 IL41Q. VS05K250) ic 501 1l410 triac triac 1f 1L410 OPTOCOUPLER trigger thyristor scr triac varistor	PDF
hips Abstract: No abstract text available Text: Chips and DCB Ceramic Substrates Power Sem iconductor Chips IXYS has a w ide range of chips for many electronic circuits. V CES IGBT Chips v CE aat lc G series, Low VCE(aat) type G series, High Speed type 300 -1 2 0 0 V 10- 60 A 1 .6 -3 .5 V 3 0 0 - 1200 V	OCR Scan		PDF

Untitled Abstract: No abstract text available Text: TSM3911D 20V Dual P-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5, Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(m) -20 ID (A) 140 @ VGS = -4.5V -2.2 200 @ VGS = -2.5V -1.8 300 @ VGS = -1.8V -1.5 Features Block Diagram	Original	TSM3911D OT-26 TSM3911DCX6	PDF
p-channel mosfet Abstract: Dual P-Channel MOSFET P-Channel MOSFET code L 1A ultra low igss pA TSM3911D Text: TSM3911D 20V Dual P-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5, Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 ID (A) 140 @ VGS = -4.5V -2.2 200 @ VGS = -2.5V -1.8 300 @ VGS = -1.8V -1.5 Features Block Diagram	Original	TSM3911D OT-26 TSM3911DCX6 p-channel mosfet Dual P-Channel MOSFET P-Channel MOSFET code L 1A ultra low igss pA TSM3911D	PDF
schematic diagram 72v to 12v converter Abstract: T1595 LM4041C1M3 LEP-9080 Text: Si9123 Vishay Siliconix 500-kHz Half-Bridge DC-DC Converter With Integrated Secondary Synchronous Rectification Control FEATURES D 12-V to 72-V Input Voltage Range D Compatible with ETSI 300 132-2 100 V, 100-ms Transients D Integrated Half-Bridge 1-A Primary Drivers	Original	Si9123 500-kHz 100-ms Si9123 half-briR0520 30BQ040 EPC19 Si4886DY MOC207 LM7301 schematic diagram 72v to 12v converter T1595 LM4041C1M3 LEP-9080	PDF
Marking d12 Abstract: No abstract text available Text: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300	Original	TSM2N7002K OT-23 OT-323 TSM2N7002KCX TSM2N7002KCU Marking d12	PDF
Untitled Abstract: No abstract text available Text: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode Electrically Isolated Back Surface IFAV = 30 A VRRM = 600 V trr = 30 ns VRRMc ISOPLUS220TM ISOPLUS220TM VRRM V V 600 300 Type DSEE29-06CC 1 2 3 G Symbol Conditions Maximum Ratings TC = 115°C; rectangular, d = 0.5	Original	DSEE29-06CC ISOPLUS220TM DS98815 ISOLPLUS220LV 728B1 065B1 123B1	PDF
LM4041C1M3 Abstract: LM4041C1M3-1 Text: Si9123 Vishay Siliconix 500-kHz Half-Bridge DC-DC Converter With Integrated Secondary Synchronous Rectification Control FEATURES D 12-V to 72-V Input Voltage Range D Compatible with ETSI 300 132-2 100 V, 100-ms Transients D Integrated Half-Bridge 1-A Primary Drivers	Original	Si9123 500-kHz 100-ms Si9123 half-briR0520 30BQ040 EPC19 Si4886DY MOC207 LM7301 LM4041C1M3 LM4041C1M3-1	PDF
STD3NB30 Abstract: No abstract text available Text: STD3NB30  N - CHANNEL 300V - 1.8Ω - 3.2A - DPAK PowerMESH MOSFET TYPE ST D3NB30 • ■ ■ ■ ■ ■ V DSS R DS on ID 300 V < 2Ω 3.2 A TYPICAL RDS(on) =1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES	Original	STD3NB30 D3NB30 STD3NB30	PDF
Untitled Abstract: No abstract text available Text: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300	Original	TSM2N7002K OT-23 OT-323 TSM2N7002KCX TSM2N7002KCU	PDF
Untitled Abstract: No abstract text available Text: □ IXYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q V D S S 300 40 85 < 200 = ^ D 2 5 D Q Class D S o n N-Channel Enhancement Mode Avalanche Rated Highdv/dt, LowQg t r r V A mQ ns Preliminary data Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C	OCR Scan	IXFH40N30Q IXFT40N30Q O-268	PDF
capacitor .01mf 100v Abstract: capacitor 0.1MF 1KV 4000 watts power amplifier circuit diagram AD8011 AD8011AN AD8011AR AD8011AR-REEL AD8011AR-REEL7 AD8011-EB AD9617 Text: a 300 MHz, 1 mA Current Feedback Amplifier AD8011* FUNCTIONAL BLOCK DIAGRAM 8-Lead Plastic DIP and SOIC FEATURES Easy to Use Low Power 1 mA Power Supply Current 5 mW on +5 VS High Speed and Fast Settling on +5 V 300 MHz, –3 dB Bandwidth (G = +1) 180 MHz, –3 dB Bandwidth (G = +2)	Original	AD8011* AD8011 capacitor .01mf 100v capacitor 0.1MF 1KV 4000 watts power amplifier circuit diagram AD8011 AD8011AN AD8011AR AD8011AR-REEL AD8011AR-REEL7 AD8011-EB AD9617	PDF

300 V 2 A MOSFET Search Results

300 V 2 A MOSFET Result Highlights (5)

300 V 2 A MOSFET Datasheets Context Search

IXGH40N30

starter/generator

75NF30

Untitled

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DSEE29-06CC

si6306

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isoplus mosfet

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ic 501

hips

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p-channel mosfet

schematic diagram 72v to 12v converter

Marking d12

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LM4041C1M3

STD3NB30

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capacitor .01mf 100v