smd transistor 6g
Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731-6G
BLS6G2731-6G
smd transistor 6g
6G smd transistor
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
nxp 544
200B
TAJD106K035R
transistor equivalent table
sot975c
radar circuit component
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BLS6G2731-120
Abstract: No abstract text available
Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.
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BLS6G2731-120;
BLS6G2731S-120
BLS6G2731-120
6G2731S-120
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GaN hemt
Abstract: Gan hemt transistor
Text: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Features • GaN depletion mode HEMT microwave transistor Common source configuration
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MAGX-002735-040L00
300us
MAGX-002735-040L00
GaN hemt
Gan hemt transistor
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FL
T1G4020036-FL
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FS
T1G4020036-FS
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FL
T1G4020036-FL
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radar amplifier s-band
Abstract: radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID
Text: BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731S-130
radar amplifier s-band
radar amplifier s-band 2.7 2.9 GHZ
ROGERS DUROID
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vishay rf output power transistor
Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw "RF Power Transistor" 35W amplifiers 600S100
Text: T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G4003532-FL
T1G4003532-FL
vishay rf output power transistor
tRANSISTOR 2.7 3.1 3.5 GHZ cw
"RF Power Transistor"
35W amplifiers
600S100
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Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
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BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
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Untitled
Abstract: No abstract text available
Text: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G4004532-FS
T1G4004532-FS
TQGaN25
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Untitled
Abstract: No abstract text available
Text: T1G4004532-FL 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T1G4004532-FL
T1G4004532-FL
TQGaN25
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3 w RF POWER TRANSISTOR 2.7 ghz
Abstract: radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit PHA2731-190M 190-W
Text: PHA2731-190M Radar Pulsed Power Amplifier—190 Watts 2.7—3.1 GHz, 200µs Pulse, 10% Duty Outline Drawing1 Features • • • • • • Input and Output matched to 50Ω RC bias circuit included Dual NPN Silicon class C power transistors Soft substrate εr = 10.5
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PHA2731-190M
Amplifier--190
PHA2731-190M
3 w RF POWER TRANSISTOR 2.7 ghz
radar amplifier s-band 2.7 2.9 GHZ
300 watts amplifier s-band
100 watts transistor s-band
2.7Ghz rc circuit
190-W
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RF5117C
Abstract: a7 transistor
Text: RF5117C 3 V, 1.8 GHz TO 2.8 GHz LINEAR POWER AMPLIFIER NOT FOR NEW DESIGNS Package Style: QFN, 16-Pin, 3 x 3 Features NS SI G Single 3.3 V Power Supply +30 dBm Saturated Output Power 26 dB Small Signal Gain High Linearity 1800 MHz to 2800 MHz Frequency Range
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RF5117C
16-Pin,
RF5117C
DS090506
a7 transistor
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Untitled
Abstract: No abstract text available
Text: PH2729-150M Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH2729-150M
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Untitled
Abstract: No abstract text available
Text: PH2729-110M Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 29 Jun 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation
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PH2729-110M
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wacom
Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz PH2729-8SM
Text: = = -E-= S‘,J =- = E .- -= = = r - an AMP company * Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty PH2729-8SM 2.7 - 2.9 GHz v2.00 Features 903 22.86: NPM Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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PH2729-8SM
Sii255-24-f
wacom
3 w RF POWER TRANSISTOR 2.7 ghz
PH2729-8SM
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539 MOTOROLA transistor
Abstract: No abstract text available
Text: Order this document by MC13146/D M ' MOTOROLA Lo w Pow er In tegrated Transm itter for IS M B an d A p p lic a tio n s MC13146 LOW POWER DC - 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Q linear Mixer with linearity control, voltage
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MC13146/D
MC13146
MC13146
MC13145)
MC33410
MC33411A/B)
539 MOTOROLA transistor
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M 9587
Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station
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SG1009/D
MRF377
MW4IC001MR4
MRF9210,
MHVIC915R2,
MWIC930R1,
MWIC930GR1
MHVIC1905R2,
MW4IC2020MBR1,
MW4IC2020GMBR1,
M 9587
FS Oncore
MG4100
LDMOS PA Driver IC, Motorola
FS Oncore GPS
motorola GPS receiver module fs oncore
Motorola transistors MRF646
semiconductors cross index
transistor m 9587
MRF9210
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transistor 9206
Abstract: B 773 transistor
Text: j Mm anäA MCP comDpanyÜ Radar Pulsed Power Transistor, 25W, 100ns Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M Features • N PN S ilic o n M ic ro w a v e P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B r o a d b a n d C la s s C O p e r a tio n
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100ns
PH2729-25M
TT50MS0AGROUND
ATC100A
transistor 9206
B 773 transistor
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INA-12063
Abstract: INA-12 INA-12063-BLK INA-12063-TR1 ir 032
Text: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance
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INA-12063
OT-363
SC-70)
INA-12063
5965-5365E
INA-12
INA-12063-BLK
INA-12063-TR1
ir 032
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E20124
Abstract: E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P
Text: e E S A E PTE 20124* L E -R E 40 Watts, 1.465–1.513 GHz R P Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular
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150pF
1-877-GOLDMOS
1301-PTE
E20124
E201
G200
Ericsson RF POWER TRANSISTOR
RF Transistor 1500 MHZ
1301P
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BLS6G3135S-120
Abstract: BLS6G3135-120
Text: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance
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BLS6G3135-120;
BLS6G3135S-120
BLS6G3135-120
6G3135S-120
BLS6G3135S-120
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hartley oscillator mc13146
Abstract: H5X2 MC12054 MC13145 MC13146 MC13146FTA MC33410 MMBV809L MMBV809LT1 VCO transistor
Text: Order this document by MC13146/D MC13146 Low Power Integrated Transmitter for ISM Band Applications LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage
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MC13146/D
MC13146
MC13146
MC13145)
MC33410
MC33411A/B)
hartley oscillator mc13146
H5X2
MC12054
MC13145
MC13146FTA
MMBV809L
MMBV809LT1
VCO transistor
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Untitled
Abstract: No abstract text available
Text: a n A M P com pany Radar Pulsed Power Transistor, 65W, 100 xs Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-65M 9 DO VS? 86 Features • • • • • • • • NPN Silicon M icrow ave P o w er T ran sisto r C o m m o n B ase C o n figu ratio n B ro ad b an d C lass C O p eratio n
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PH2729-65M
TT30M50A
ATC100A
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