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    K3633 Search Results

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    K3633 Price and Stock

    TE Connectivity EK3633-000

    Cable 20 AWG Spec 44 Tin Plated Copper Modified Radiation Cross-linked PVF2 2500V Yellow - Bulk (Alt: EK3633-000)
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    Avnet Americas EK3633-000 Bulk 5,000
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    Mouser Electronics EK3633-000
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    Interstate Connecting Components EK3633-000
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    Master Electronics EK3633-000
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    Sager EK3633-000 1
    • 1 $3.98
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    Vishay Intertechnologies CRCW06031K13FKEA

    Thick Film Resistors - SMD 1/10watt 1.13Kohms 1%
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    TTI CRCW06031K13FKEA Reel 20,000 5,000
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    Vishay Intertechnologies CRCW2010121KFKEF

    Thick Film Resistors - SMD 3/4watt 121Kohms 1%
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    TTI CRCW2010121KFKEF Reel 8,000 4,000
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    Amphenol Corporation 88-552044-18K

    Circular MIL Spec Connector MS/TV PLUGS
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    TTI 88-552044-18K Each 96 1
    • 1 $57.99
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    Murata Manufacturing Co Ltd DMS-20LCD-2-5-C

    Digital Panel Meters DPM +-20V LCD 5V-PWR
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    TTI DMS-20LCD-2-5-C Bulk 12 1
    • 1 $36.55
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    K3633 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3.5mm phone jack stereo

    Abstract: PHONE JACK K3617 mono 3.5mm phone jack K3636 3.5mm phone jack stereo phone jack jack 3.5mm K3612 3.5mm stereo
    Text: Phone Jack FOR K3610 K3612 K3633 K3624 K3610A /B /C /D /E K3625 3.5mm STEREO PHONE JACK 2.5mm STEREO PHONE JACK K3612A /B /C /D /E K36252 3.5mm STEREO PHONE JACK K3616 3P 3.5mm STEREO PHONE JACK 2.5mm MONO PHONE JACK 2.5mm MONO PHONE JACK K3626 3.5mm MONO PHONE JACK


    Original     		PDF K3610 K3612 K3633 K3624 K3610A K3625 K3612A K36252 K3616 K3626 3.5mm phone jack stereo PHONE JACK K3617 mono 3.5mm phone jack K3636 3.5mm phone jack stereo phone jack jack 3.5mm 3.5mm stereo

    Untitled

    Abstract: No abstract text available
    Text: K3633 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。


    Original     		PDF 2SK3633

    toshiba a114

    Abstract: 2SK3633 SC-65 K3633 200VW
    Text: K3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV K3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		PDF 2SK3633 toshiba a114 2SK3633 SC-65 K3633 200VW

    K3496

    Abstract: K3436 K3498 K3638 K3492 K2746 MK Socket MK Socket outlet K2977 K3431
    Text: Part M Product Guide Part M Product Guide An introduction to Part M of the Building Regulations: Part USE OF BUILDINGS. It is estimated that 8.6 million people in the UK a assist with the facilities for people with disabilities, the Office of the Depu Building Regulations 2000 have issued Part M, which covers the ent


    Original     		PDF MK166 K3496 K3436 K3498 K3638 K3492 K2746 MK Socket MK Socket outlet K2977 K3431

    2SK3633

    Abstract: SC-65
    Text: K3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV K3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		PDF 2SK3633 2SK3633 SC-65

    2SK3633

    Abstract: K3633 VDD400 SC-65
    Text: K3633 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3633 ○ スイッチングレギュレータDC−DC コンバータ ○ モータドライブ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。


    Original     		PDF 2SK3633 SC-65 2-16C1B 2SK3633 K3633 VDD400 SC-65

    Untitled

    Abstract: No abstract text available
    Text: K3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV K3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		PDF 2SK3633

    52s marking code transistor

    Abstract: 52s marking code 52s marking 2SK3633 SC-65
    Text: K3633 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3633 52s marking code transistor 52s marking code 52s marking 2SK3633 SC-65

    Untitled

    Abstract: No abstract text available
    Text: K3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV K3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		PDF 2SK3633

    2SK3633

    Abstract: SC-65
    Text: K3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS IV K3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		PDF 2SK3633 2SK3633 SC-65

    Untitled

    Abstract: No abstract text available
    Text: K3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type −MOS IV K3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.)


    Original     		PDF 2SK3633