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    Renesas Electronics Corporation 2SK3211-90STR-E

    NCH POWER MOSFET 200V 25A 75MOHM D2PAK - Tape and Reel (Alt: 2SK3211-90STR-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SK3211-90STR-E Reel 1,000
    • 1 $3.548
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    Renesas Electronics Corporation 2SK3211STR-E

    NCH POWER MOSFET 200V 25A 75MOHM D2PAK - Tape and Reel (Alt: 2SK3211STR-E)
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    Avnet Americas 2SK3211STR-E Reel 1,000
    • 1 $3.52
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    Renesas Electronics Corporation 2SK3210-90STL-E

    NCH POWER MOSFET 150V 30A 45MOHM D2PAK - Tape and Reel (Alt: 2SK3210-90STL-E)
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    Avnet Americas 2SK3210-90STL-E Reel 1,000
    • 1 $3.635
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    Renesas Electronics Corporation 2SK3210STL-E

    Transistor MOSFET N-CH 150V 30A 4-Pin SC-83 Cut Tape - Tape and Reel (Alt: 2SK3210STL-E)
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    Avnet Americas 2SK3210STL-E Reel 1,000
    • 1 $3.476
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    Fuji Electric Co Ltd 2SK3216-01

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    Bristol Electronics 2SK3216-01 50
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    Quest Components 2SK3216-01 144
    • 1 $4.5
    • 10 $2.25
    • 100 $1.95
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    Find more 2SK321 price and stock on Findchips.com

    2SK321 Datasheets (44)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2SK321 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK321 Unknown FET Data Book Scan PDF
    2SK321 Panasonic SI N-CHANNEL JUNCTION Scan PDF
    2SK3210 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    2SK3210 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210S Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3210STL Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    2SK3211 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK321 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A


    Original     		2SK3214 REJ03G1093-0400 PRSS0004AC-A O-220AB) PDF

    2SK3218-01

    Abstract: 2SK3219-01MR
    Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters


    Original     		2SK3219-01MR O-220F15 2SK3218-01 2SK3219-01MR PDF

    Hitachi DSA0076

    Abstract: 2SK3212
    Text: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS =0.1 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2


    Original     		2SK3212 ADE-208-752A 220FM Hitachi DSA0076 2SK3212 PDF

    D1378

    Abstract: 2SK3211 2SK3221
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3211 Isolated TO-220 low gate charge and excellent switching characteristics, and


    Original     		2SK3221 2SK3221 2SK3211 O-220 O-220 D1378 2SK3211 PDF

    78 MOS

    Abstract: HITACHI DIODE 2SK3214 Hitachi DSA00395
    Text: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		2SK3214 ADE-208-763 220AB 78 MOS HITACHI DIODE 2SK3214 Hitachi DSA00395 PDF

    2SK3214

    Abstract: 2SK3214-E PRSS0004AC-A
    Text: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0300 Previous: ADE-208-763A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK3214 REJ03G1093-0300 ADE-208-763A) PRSS0004AC-A O-220AB) 2SK3214 2SK3214-E PRSS0004AC-A PDF

    2SK3211

    Abstract: 2SK3211L-E 2SK3211STL-E PRSS0004AE-A
    Text: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A


    Original     		2SK3211 REJ03G1091-0400 PRSS0004AE-A PRSS0004AE-B 2SK3211L-E 2SK3211STL-E PRSS0004AE-A PDF

    2SK3219-01MR

    Abstract: L420
    Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters


    Original     		2SK3219-01MR O-220F15 2SK3219-01MR L420 PDF

    Hitachi DSA0076

    Abstract: 2SK3214
    Text: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763A Z Target Specification 2nd. Edition Mar. 2001 Features • Low on-resistance R DS = 130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		2SK3214 ADE-208-763A 220AB Hitachi DSA0076 2SK3214 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO -220FM Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		2SK3212 -220FM PDF

    MA56

    Abstract: 2SK321 2SK374 panasonic capacitor FL
    Text: P A N A S O N IC I N D L /E L E K iS E M I } 7SC D | b T B 5 fl5 M D D C H b fla 2SK321 2SK321 '> ij zi > N f v N-Channel Junction /A w lt-iS it^ l^ iliffl/W id e -B a n d , Low-Noise Amplifier > ^ f fl/V id e o Camera • # • ^ ¡/F e a tu r e s A £ # l l : C is s * ' V J ' ? V ^ 0 / L o w


    OCR Scan     		2SK321 MA56 2SK321 2SK374 panasonic capacitor FL PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3214 Silicon N Channel MOS FET High Speed Power Switching REJ03G1093-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A


    Original     		2SK3214 REJ03G1093-0400 PRSS0004AC-A O-220AB) PDF

    2SK3212

    Abstract: Hitachi DSA003756
    Text: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D


    Original     		2SK3212 ADE-208-752 220FM 2SK3212 Hitachi DSA003756 PDF

    hitec 410

    Abstract: Hitachi DSA0023 HITACHI DIODE hitachi ic 2SK3215 Hitachi DSA00239
    Text: 2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =350mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		2SK3215 ADE-208-764 220AB hitec 410 Hitachi DSA0023 HITACHI DIODE hitachi ic 2SK3215 Hitachi DSA00239 PDF

    2SK3211

    Abstract: 2SK3211L-E 2SK3211STL-E PRSS0004AE-A
    Text: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0300 (Previous: ADE-208-761A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		2SK3211 REJ03G1091-0300 ADE-208-761A) PRSS0004AE-A PRSS0004AE-B 2SK3211L-E 2SK3211STL-E PRSS0004AE-A PDF

    2SK3217-01MR

    Abstract: No abstract text available
    Text: 2SK3217-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters


    Original     		2SK3217-01MR O-220F15 2SK3217-01MR PDF

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D


    Original     		2SK3212 ADE-208-752 220FM Hitachi DSA00279 PDF

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original     		2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		2SK3216-01 O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		2SK3218-01 O-220AB PDF

    Hitachi DSA0076

    Abstract: 2SK3210
    Text: 2SK3210 L , 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-760A (Z) Target Specification 2nd. Edition Mar. 2001 Features • Low on-resistance R DS = 40mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source


    Original     		2SK3210 ADE-208-760A Hitachi DSA0076 PDF

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3212 Silicon N Channel MOS FET High Speed Power Switching 1st. Edition February 1999 Features • • • Low on-resistance RDS = 0.1 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 1. Gate 2. Drain


    Original     		2SK3212 220FM Hitachi DSA002749 PDF

    2SK3211

    Abstract: Hitachi DSA00310
    Text: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 2SK3211


    Original     		2SK3211 ADE-208-761A 2SK3211 Hitachi DSA00310 PDF

    hitec 410

    Abstract: HITACHI DIODE 2SK3215 Hitachi DSA00182
    Text: 2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =350mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline


    Original     		2SK3215 ADE-208-764 220AB hitec 410 HITACHI DIODE 2SK3215 Hitachi DSA00182 PDF