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    Part ECAD Model Manufacturer Description Download Buy
    2SK3177-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 15A 115Mohm To-220Fm Visit Renesas Electronics Corporation

    2SK317 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK317 Hitachi Semiconductor Silicon N-Channel MOS FET, HF / VHF Power Amplifier Scan PDF
    2SK317 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK317 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK317 Unknown FET Data Book Scan PDF
    2SK317 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK317 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK317 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK3174A Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK3174A Renesas Technology Silicon N Channel MOS FET UHF Power Amplifier Original PDF
    2SK3175A Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK3175A Renesas Technology Silicon N Channel MOS FET UHF Power Amplifier Original PDF
    2SK3176 Toshiba Original PDF
    2SK3176 Toshiba FETs - Nch 150V Original PDF
    2SK3176 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK3176 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3176 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high voltage switching, switching regulator, DC-DC converter & motor drive applications Scan PDF
    2SK3176(F) Toshiba 2SK3176 - MOSFET N-CH 200V 30A 2-16C1B Original PDF
    2SK3176(F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 30A TO-3PN Original PDF
    2SK3176PBF Toshiba 2SK3176 - TRANSISTOR 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power Original PDF
    2SK3177 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK317 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3176

    Abstract: 2SK3176 SC-65 25c512
    Text: 2SK3176 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3176 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 30 S (標準)


    Original     		PDF 2SK3176 2-16C1B SC-65 k3176 2SK3176 SC-65 25c512

    2SK3175A

    Abstract: rfpak DSA003640 Hitachi DSA003640
    Text: 2SK3175A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1452 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz) • Compact package Outline RFPAK-G


    Original     		PDF 2SK3175A ADE-208-1452 860MHz) D-85622 D-85619 2SK3175A rfpak DSA003640 Hitachi DSA003640

    2sk3174

    Abstract: 2SK3174A DSA003640
    Text: 2SK3174A Silicon N Channel MOS FET UHF Power Amplifier ADE-208-1451 Z 1st. Edition September 2001 Features • High power output, High gain, High efficiency P1dB = 220 W , PG = 15.3dB , ηD = 61 % (at P1dB) typ. (f = 860MHz) • Compact package Suitable for push - pull circuit


    Original     		PDF 2SK3174A ADE-208-1451 860MHz) D-85622 D-85619 2sk3174 2SK3174A DSA003640

    2SK3177

    Abstract: Hitachi DSA00276
    Text: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching ADE-208-745A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =90mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2


    Original     		PDF 2SK3177 ADE-208-745A 220FM D-85622 2SK3177 Hitachi DSA00276

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original     		PDF 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354

    512ID

    Abstract: 2SK3176 SC-65 k3176
    Text: 2SK3176 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3176 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 30 S (標準)


    Original     		PDF 2SK3176 2-16C1B SC-65 512ID 2SK3176 SC-65 k3176

    k3176

    Abstract: 2SK3176 SC-65
    Text: 2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS V 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.)


    Original     		PDF 2SK3176 k3176 2SK3176 SC-65

    2SK3177

    Abstract: Hitachi DSA00239
    Text: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching ADE-208-745A Z 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM


    Original     		PDF 2SK3177 ADE-208-745A 220FM 2SK3177 Hitachi DSA00239

    k3176

    Abstract: 2SK3176 SC-65
    Text: 2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS V 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.)


    Original     		PDF 2SK3176 k3176 2SK3176 SC-65

    2SK3177

    Abstract: 2SK3177-E PRSS0003AD-A 2SK317
    Text: 2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 Previous: ADE-208-745A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3177 REJ03G1089-0300 ADE-208-745A) PRSS0003AD-A O-220FM) 2SK3177 2SK3177-E PRSS0003AD-A 2SK317

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR m— GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE t # • m t m m U H F-SH F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SK3179 Admitt510

    2SK3176

    Abstract: SC-65
    Text: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K 3 1 76 SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm j 1 • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 30 S (Typ.)


    OCR Scan     		PDF 2SK3176 2SK3176 SC-65

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9 M A X .


    OCR Scan     		PDF 2SK3176

    2SK317

    Abstract: HF VHF power amplifier 2sk317 hitachi k317
    Text: • 2SK317 4 4 ^ 2 0 5 0013033 472 ■ H I T 4 HITACHI/ OPTOELECTRONICS blE lT SILICON N-CHANNEL MOS FET HF/VHF POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. Gate is Protected by Zenner Diodes. No Secondary-Breakdown.


    OCR Scan     		PDF 2SK317 100MHz; I75MH> 2SK317 HF VHF power amplifier 2sk317 hitachi k317

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 Í Q MAY


    OCR Scan     		PDF 2SK3176

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK3176

    2SK317

    Abstract: 2sk317 hitachi J-D4A rfpak zenner 10v D013Q3M
    Text: • 2SK317 44‘ìbBDS 0013033 47S « H I T H blE J> HIT AGHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • High Breakdown Voltage. • You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes. •


    OCR Scan     		PDF 2SK317 D013Q3M 2SK317 2sk317 hitachi J-D4A rfpak zenner 10v

    2SK317

    Abstract: zenner 10v 2sk317 hitachi
    Text: • 2SK317 HM'ìtSQS 0013033 47S ■ H I T 4 HI TA G H I / OPTOELECTRONICS LIE lT SILICON N-CHANNEL MOS FET H F /V H F POWER AMPLIFIER ■ FEATURES • • High Breakdown Voltage. You Can Decrease Handling Current. • Gate is Protected by Zenner Diodes.


    OCR Scan     		PDF 2SK317 D013Q3M zenner 10v 2sk317 hitachi

    313-105

    Abstract: 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406
    Text: TOSHIBA 2SK3179 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K 3 1 79 UHF-SHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure • High Gain MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Gate-Drain Voltage


    OCR Scan     		PDF 2SK3179 SYM57 313-105 2SK3179 ET 8211 0737 8178 0.514 740 1025 5688 el 7406

    2SK3176

    Abstract: SC-65
    Text: T O S H IB A 2SK3176 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2 S K 3 1 76 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •


    OCR Scan     		PDF 2SK3176 2SK3176 SC-65