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    2SK970 Price and Stock

    Rochester Electronics LLC 2SK970-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK970-E Bulk 163
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.85
    • 10000 $1.85
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    Renesas Electronics Corporation 2SK970-E

    2SK970 - Power Field-Effect Transistor, N-Channel MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SK970-E 401 1
    • 1 $1.87
    • 10 $1.87
    • 100 $1.75
    • 1000 $1.59
    • 10000 $1.59
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    2SK970 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK970 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK970 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK970 Unknown FET Data Book Scan PDF
    2SK970 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK970 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK970 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SK970 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK970

    Abstract: 2SK97 NS8060
    Text: 2SK970 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK970 220AB 2SK970 2SK97 NS8060

    Untitled

    Abstract: No abstract text available
    Text: 2SK970 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)


    Original     		PDF 2SK970

    2SK1093

    Abstract: 2SK970
    Text: 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK1093 220FM 2SK1093 2SK970

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ² 0.17 ½, VGS = 10 V, ID = 4 A P-channel: RDS(on) ² 0.2 ½, VGS = –10 V, ID = –4 A


    Original     		PDF 4AM14 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 Hitachi 2SJ Hitachi DSA002751

    2SK974S

    Abstract: Hitachi DSA002759
    Text: 4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS on ≤ 0.18 Ω, VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 Ω, VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching


    Original     		PDF 4AK16 2SK970, 2SK1093, 2SK974 2SK974S Hitachi DSA002759

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    2SK1778

    Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
    Text: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247


    OCR Scan     		PDF 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK13003 2SK1665 2SK1778 27.145 2SK1296 2SJ172 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302

    Untitled

    Abstract: No abstract text available
    Text: 2SK970 blE ]> • 44^205 - 0 0 1 3 1 4 ^ 71G ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ZEE 02 ■ FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device


    OCR Scan     		PDF 2SK970 44Tb20S

    2SK2728

    Abstract: 2sk2729
    Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929


    OCR Scan     		PDF 2SK741 2SK970 2SK971 2SK972 2SK973 2SK974 2SK1093 2SK1094 2SK2728 2sk2729

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


    OCR Scan     		PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    2SK1778

    Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
    Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m


    OCR Scan     		PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2SK1778 2SJ177 2SJ295 PF0042

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972

    2SJ172

    Abstract: 2SJ175 2SK1093 2SK970 6AM11 AM11 SP-12
    Text: HITACHI 6AM11 S IL IC O N N-CHANNEL/P-CHANM EL P O W E R M O S F E T A R R A Y HIGH SPEED POW ER SWITCHING • FEA TU RES A.OtO. 2 • Low Qn-Resistance N-channel: Ros on ^ 0.17 Q , VG3 = 10 V, lD= 2.5 A P-channef: RDS (on) ^ 0.2 Q , VQS = -10 V, iD= -2.5 A


    OCR Scan     		PDF 6AM11 2SK970 2SK1093 2SJ172 2SJ175 2SJ175 6AM11 AM11 SP-12

    2SJ175 equivalent

    Abstract: 2SJ172 2SJ175 2SK1093 2SK970 AM11 2SK109
    Text: HITACHI 4AM11 SILICON N-CHANNEL/P-CHANNEL PO W E R MOS FET ARRAY HIGH SPEED POWER SWITCHING • FEA TU RES • Low Qn-Resistance N-channel; RDS Ion ^ 0.17 £?, V GS — 10 V. I0 - 2.5 A P-channel Ros o n )£ 0 .2 Q . VGS - -10 V, lD - -2.5 A Capable of 4 V Gate Drive


    OCR Scan     		PDF 2SK970, 2SK1093 2SJ172, 2SJ175 sp-10) 7a-25 2SK970 2SJ172 2SJ175 equivalent 2SJ172 2SJ175 2SK970 AM11 2SK109

    lf7a

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on < 0.17 SI, VGS = 10 V, ID= 4 A P-channel: RDS(,m) < 0.2 £2, VGS = -1 0 V, ID= -4 A • Capable of 4 V gate drive


    OCR Scan     		PDF 6AM12 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 lf7a

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    Untitled

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A


    OCR Scan     		PDF 6AM12 2SK970 T0-220AB) 2SK1093 T0-220FM) 2SJ172 TQ-220AB) 2SJ175 TQ-220FM)