2SK2563
Abstract: F4F60VX2 600V,4A DIODE
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V4A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2563
F4F60VX2)
FTO-220
600V4A
00-200V
110mJ
2SK2563
F4F60VX2
600V,4A DIODE
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600V,4A DIODE
Abstract: 2SK2563 600V4A F4F60VX2 2a 400v mosfet
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2563
F4F60VX2)
FTO-220
600V4A
00-200V
110mJ
600V,4A DIODE
2SK2563
600V4A
F4F60VX2
2a 400v mosfet
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2563
F4F60VX2)
600V4A
FTO-220
00-200V
110mJ
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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2SK1411
Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0
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2SK1358
O-247
2SK1359
2SK1362
2SK2563
2SK2568
2SK1411
2SK1535
2SK1410
2SK1538
2SK1358 datasheet
2sk2082
2SK2397-01MR
2SK2475
2SK2370
2sk2225
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2SK2829
Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586
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2SK2912
2SK2938
2SK2939
2SK2940
2SK2957
2SK2958
2SJ21S
2SJ217
28K1161
2SK1162
2SK2829
Spl 740
2sk1
2SK2728
28K13
2SK151
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Untitled
Abstract: No abstract text available
Text: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100
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61-4SMD)
O-220
IT0-220
2SK1533
FT0-220
FTO-220
ST0-220
67SMD)
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shindengen SH 222
Abstract: -20/shindengen SH 222 2sk type
Text: Power MOS F E T Specification 1. Absolute Maximum Ratings Item Symbol Condition Ratings Unit - 5 5 - 1 5 0 °C Storage Temperature T s tg Channel Temperature ^ch 15 0 °C Drain-Source Voltage V d ss 6 0 0 V Gate-Sourse Voltage V GS S ±30 V Drain Current DC
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2SK2563
shindengen SH 222
-20/shindengen SH 222
2sk type
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs VX-II series N-Channel, Enhancement type /X X V 1 E-pack SMD Surface Mount E-pack (Lead type) V dss . ry i 2SK2177 2SK2178 2SK2179 Id . Pt . Ï.M . . Ï W I . _ . l y . i . . _ 10 15 20 40 ±30 ±30
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STO-220
2SK2177
2SK2178
2SK2179
2SK2181
2SK2184
2SK2187
2SK2191
FTO-220
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