7842
Abstract: No abstract text available
Text: 2SK1727 LD L o w D rive S eries V D 2 08 7 60V N Channel Power M OSFET F e a tu re s •Low ON resistance. • V ery high-speed switching. • Low-voltage drive. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage
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2SK1727
400mA
400mA,
800mA,
41093TH
A8-7842
7842
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EN3822
Abstract: 2SK1727
Text: Ordering number:EN3822 N-Channel Silicon MOSFET 2SK1727 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1727] 2.5 1.45 1.0
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EN3822
2SK1727
2SK1727]
PW10s,
EN3822
2SK1727
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PDF
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2SK1727
Abstract: BEG12
Text: Ordering num ber:EN3822 _ 2SK1727 No.3822 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatures •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. • Meets radial taping. A bsolute M aximum Eatings at Ta = 25°C
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EN3822
2SK1727
BEG12
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1727 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)5 I(D) Max. (A)800m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.2 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55
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2SK1727
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2SK1727
Abstract: EN3822
Text: Ordering number:EN3822 N-Channel Silicon MOSFET 2SK1727 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1727] 2.5 1.45 1.0
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EN3822
2SK1727
2SK1727]
2SK1727
EN3822
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2SK1723
Abstract: 2SK1708 2SK1702 2SK1700 2SK1705 2SK1720 2SK1701 2SK1718 2SK1719 2SK1699
Text: - 118 - « tt « ffl jS mm ft 'Æ f M ? V 1 K v m * * Vg s * I * * V 1* (A) « [x P d / P c h * ♦ ÍW) less (max) (A) Vg s (V) (Ta=25eC ) ft 35 Id s (min) (max) V d s (A) (A) (V) tit (V) ff) (max) V d s (V) (V) S w (inin) (S) Id (A) Id (A) Vd s (V) 2SK1698
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2SKX698
2SK1699
1699S
2SK1700
ZSK1701
2SK1702
2SK1703
1703S
50nstyp
2SK1724
2SK1723
2SK1708
2SK1705
2SK1720
2SK1701
2SK1718
2SK1719
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2SK2747
Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282
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Ta-25t)
2SJ282
T0220
2SJ348
2SJ478V
2SJ254
T0220ML
2SJ255
2SK2747
2SK2748
2SJ403
2SK536
2SK1467
2SJ256
2SJ263
2SJ264
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2SJ26
Abstract: No abstract text available
Text: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6
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2SJ285
2SJ190
2SJ288
2SJ191
2SJ192
2SJ362
2SJ414
O-220
O-220ML
2SJ26
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J289
Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications
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Sma11-sized
2SK1839<
2SK536
2SK1840UJ)
3SK248CNJ)
2SK669
2SK1841
2SK583
Characteristics/Ta-25X;
12/55m
J289
3SK266
2SK1728
3sk251
DS-17 SANYO
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SK243-2
Abstract: 2SK2432 2sk1470
Text: • LD Series Lineup VDSS = 60V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package VfiSS VG8S *D A 2SK1470 CP 0.4 2.0 PCP +15 TP 2SK1472 2SK2432 ZP 0.9/1.2 0.4 45 0.45/0.6 0.35/0.45 2.0 150 1.2/1.6 0.9/1.2 1.0 45 30 0.08/0.11 0.06/0.08 8.0
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2SK1846
2SK1470
2SK1726
2SK1471
2SK1472
2SK2432
2SK1898
2SK1899
2SK1900
2SK21G4
2SK243-2
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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J289
Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications
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3SK265
3SK266
3SK248
12/55m
2/80m
45/-/50m
130m/65m
21/90m
MT931224TR
J289
K2171
2sj281
2SK1847
2SK1470 KD
K1470
2sk669
K1311
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13FLP
Abstract: sj22 serie 2sk
Text: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6
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T0220M
2SK1728
2SK1738
2SK1474
2SK1475
2SK1412
2SK1414
-220FI
2SK1455
23K1456
13FLP
sj22
serie 2sk
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