3773 P
Abstract: 2SK1472
Text: Ordering number:EN3773A N-Channel Silicon MOSFET 2SK1472 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1472] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2
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EN3773A
2SK1472
2083B
2SK1472]
2092B
3773 P
2SK1472
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3773 P
Abstract: 3773 2SK1472
Text: Ordering number:EN3773A N-Channel Silicon MOSFET 2SK1472 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1472] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2
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EN3773A
2SK1472
2083B
2SK1472]
2092B
3773 P
3773
2SK1472
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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Untitled
Abstract: No abstract text available
Text: 2SK1472 2083A LD L o w D rive S eries V Dss — 6 0 V 2092A N Channel Power M OS F ET F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage V dss
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2SK1472
VD0-30V
71993TH
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3773A
Abstract: 2SK1472
Text: Ordering number: E N 3 7 7 3 A 2SK1472 N0.3773A N-Channel MOS Silicon FET Very High-Speed Switching Applications i F eatu res - Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b solu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage
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EN3773A
2SK1472
100//A
3773A
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2SK243-2
Abstract: 2SK2432 2sk1470
Text: • LD Series Lineup VDSS = 60V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package VfiSS VG8S *D A 2SK1470 CP 0.4 2.0 PCP +15 TP 2SK1472 2SK2432 ZP 0.9/1.2 0.4 45 0.45/0.6 0.35/0.45 2.0 150 1.2/1.6 0.9/1.2 1.0 45 30 0.08/0.11 0.06/0.08 8.0
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2SK1846
2SK1470
2SK1726
2SK1471
2SK1472
2SK2432
2SK1898
2SK1899
2SK1900
2SK21G4
2SK243-2
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3773A
Abstract: 2092A 3773 P 2SK1472
Text: 2SK1472 2083A LD L o w D rive Series 2092A V DSs = 6 0 V N Channel Power MOSFET 3773A Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. bsolute M aximum R atings a tT a = 25°C Drain to Source Voltage V DSS Gate to Source Voltage
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2SK1472
10//s,
3773A
2092A
3773 P
2SK1472
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J289
Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications
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Sma11-sized
2SK1839<
2SK536
2SK1840UJ)
3SK248CNJ)
2SK669
2SK1841
2SK583
Characteristics/Ta-25X;
12/55m
J289
3SK266
2SK1728
3sk251
DS-17 SANYO
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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K1412
Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Text: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP
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17G7ti
2SK1467
2SK14691
2SK1470
--2SK1471
2SK1472
2SK1473
2SK1474
2SK1475
1800m
K1412
K1413
K1464
K923A
2sk1412 to220ml
AK1052
AK924
2SJ193
2SK1460
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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J289
Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications
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3SK265
3SK266
3SK248
12/55m
2/80m
45/-/50m
130m/65m
21/90m
MT931224TR
J289
K2171
2sj281
2SK1847
2SK1470 KD
K1470
2sk669
K1311
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13FLP
Abstract: sj22 serie 2sk
Text: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6
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T0220M
2SK1728
2SK1738
2SK1474
2SK1475
2SK1412
2SK1414
-220FI
2SK1455
23K1456
13FLP
sj22
serie 2sk
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SBA10Q-O4Y
Abstract: 2SK2439 2SJ40 SK2555 FW106
Text: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package
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SB20W03P
SB30-03P
SB40W
SBA50-04Y
SBA10Q-O4Y
SBA130-04ZP
SBA160-04Y
SBA160-04ZP
250mm2
2SJ469
2SK2439
2SJ40
SK2555
FW106
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